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  • 1
    Electronic Resource
    Electronic Resource
    Raman spectroscopy of strained GeSi alloys deposited on Ge substrates (1996)
    Springer
    Applied physics 62 (1996), S. 387-390 
    Details
    ISSN: 1432-0630
    Keywords: 78.30.-j ; 61.55.Hg ; 81.15.Gh
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The Raman scattering method has been successfully used to investigate the properties of GeSi alloys deposited on Ge substrates in this paper. The effect of Si composition and strain in the GeSi alloy on the Raman shifts of Ge-Ge, Ge-Si and Si-Si phonon modes is studied. The relationship between them have been derived by the assumption that the Raman shifts is nearly linear with Si composition and strain in the GeSi alloys. The experimental data show reasonable agreement with the fits.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01594238
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    An optical differential reflectance study of adsorption and desorption of xenon and deuterium on Ni(111) (1996)
    Springer
    Applied physics 63 (1996), S. 1-8 
    Details
    ISSN: 1432-0630
    Keywords: 78.66 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We studied adsorption and desorption of Xe and deuterium on Ni(111) using an optical differential reflectance technique. The main findings are: (i) the differential reflectance varies almost linearly with the surface densities of deuterium and Xe adatoms, and the signals can be described well with a three-layer model and the known dielectric responses of the surface layers: (ii) the adsorption of deuterium atT = 120 K follows the Langmuir kinetics, while the adsorption of Xe atT = 38 K follows the zeroth-order kinetics; (iii) nearT = 70 K, the rate of Xe desorption is almost coverage-independent with an activation energy ofE des = 4.4 ± 0.2 kcal/mol. Our analysis suggests that the Xe desorption is likely to be dominated by the escape rate from the corners of two-dimensional Xe islands.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01579739
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    Paper (German National Licenses)
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