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Raman spectroscopy of strained GeSi alloys deposited on Ge substrates (1996)

Gu, S. ; Qin, L. ; Zhang, R. ; [weitere]

Springer

Applied physics 62 (1996), S. 387-390

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ISSN: 1432-0630

Schlagwort(e): 78.30.-j ; 61.55.Hg ; 81.15.Gh

Quelle: Springer Online Journal Archives 1860-2000

Thema: Maschinenbau , Physik

Notizen: Abstract The Raman scattering method has been successfully used to investigate the properties of GeSi alloys deposited on Ge substrates in this paper. The effect of Si composition and strain in the GeSi alloy on the Raman shifts of Ge-Ge, Ge-Si and Si-Si phonon modes is studied. The relationship between them have been derived by the assumption that the Raman shifts is nearly linear with Si composition and strain in the GeSi alloys. The experimental data show reasonable agreement with the fits.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF01594238

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