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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7075-7079 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous oxide films with a composition of Bi2DyFe5O12 have been prepared by rf sputtering technique. The crystallization process was investigated using x-ray diffraction, differential thermal analysis, magnetic properties, magnetic resonance spectra, magneto-optical Faraday spectra, Raman spectra, and infrared reflection spectra. Amorphous oxide films exhibit very small magnetization and Faraday rotation at room temperature. At about 600 °C amorphous films crystallize to a garnet phase. With crystallization the magnetization and Faraday rotation increase rapidly. Raman and infrared spectra studies show the presence of tetrahedral sites in the amorphous films. As the annealing temperature increases, the peaks corresponding to octahedral and dodecahedral sites occur successively. It is of interest to note that amorphous oxide films containing Fe3+ ions show no magnetic resonance spectra at 71 and 300 K. The films annealed above crystallization temperature show a normal resonance spectrum. With increasing annealing temperature the linewidth decreases rapidly and the effective magnetization and anisotropy constant increase. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 104 (1996), S. 4274-4282 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: State resolved characterization of nascent gas phase products is used as probe for the dynamics of an energetic surface reaction. This is achieved in the photodissociation of monolayer phosgene adsorbed on Ag(110). Irradiation of adsorbed Cl2CO in a broad photon energy range (hν=1.9–6.4 eV) leads to dissociation, with Cl retained on the surface and CO desorbing into the gas phase. The translational energy of product CO (g), 〈Etrans〉=0.26 eV, is independent of hν, even at the threshold photon energy (1.9 eV). This result establishes a dissociative electron attachment mechanism involving a reactive intermediate, ClCO, whose prompt dissociation serves as a probe to surface dissociation dynamics. Consistent with translation, internal state distribution of product CO (g) also shows an energetic origin: The rotational distribution, with an overall flux-weighted mean rotational energy of 〈Erot〉=0.17 eV, can be approximated by a bimodal Boltzmann distribution with rotational temperatures of 700 K at low J(s) and 7000 K at high J(s); the relative vibrational population is Nν=1/Nν=0=0.30. Contrary to common expectation based on quenching rates, both translational and rotational energies of CO (g) from monolayer photodissociation are much higher than those from the direct photodissociation in multilayers. This is taken as evidence for concerted reaction dynamics on the surface: The high exothermicity in the Cl–Ag bond formation on the surface exerts part of the energy to the Cl–CO coordinate, leading to higher energies in CO (g). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 104 (1996), S. 7895-7903 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Understanding photochemistry and energy transfer mechanisms in molecular solid films is of interest to many scientific issues, ranging from matrix-assisted laser desorption ionization mass spectrometry to photochemical processes on polar stratospheric cloud particles. We present a study of a model system: the photochemistry (hν=1.2–6.4 eV) of a molecular Cl2CO solid film at low laser power density, 10 μJ–1 mJ/cm2 for ∼10 ns pulses. At hν≥3.5 eV, photon absorption by Cl2CO leads to a major photodissociation channel resulting in CO (g) and Cl (g) and a minor molecular Cl2CO ejection channel. Both photodissociation and molecular ejection are observed at the lowest laser power density and their yields depend linearly on pulse energy. This result establishes a single photon photoexcitation mechanism. The electronically excited Cl2CO in the surface region of the solid film can either dissociate or convert its electronic energy to translational motion in Cl2CO. The translational energy distribution of CO (g) from the photodissociation channel is bimodal: the flux-weighted mean translational energy of the fast channel is photon energy dependent (〈Etrans〉=210, 135, and ∼90 meV at hν=6.4, 5.0, and 3.5 eV, respectively), while the slow channel is independent of photon energy and corresponds to completely thermalized CO molecules (〈Etrans/2k〉=84±3 K). The mean translational energy of photoejected Cl2CO is 〈Etrans〉=220±20 meV. In addition to photoejection, there is also a distinctively different thermal desorption channel due to transient laser heating. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2736-2738 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that the morphology of crystalline surfaces during ion sputtering and thermal annealing can be monitored in situ with an oblique-incidence polarization-modulated optical reflectance difference technique. Such a technique is effective under high ambient pressures as well as ultrahigh vacuum. We studied the Ne ion sputtering and thermal annealing of Ni(111) from 623 to 823 K. We found that the rate-limiting step (with an activation energy of 1.1 eV/atom) during annealing is most likely to be direct evaporation of Ni atoms from step edges. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1244-1246 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A GaS thin film has been formed epitaxially on GaAs(100) using a photoassisted growth-etching reaction between H2S and the GaAs substrate. In the reaction, the growth of GaS is accomplished via the replacement of As in the GaAs lattice by the photochemically generated S atom, while As is etched from the substrate as arsenic sulfide. The surface of the resulting GaS thin film is characterized by a sharp (2×1) low energy electron diffraction pattern, indicating excellent crystalline quality. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 136-138 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The variation of thermopower with temperature from 77 to 300 K has been measured in samples of nanostructured silver. It is observed that a dramatic change occurs in the thermopower of the nanostructured silver as grain size is reduced into the nanoscale region. In particular, with the grain size decreasing to the nanometer scale, the slope of the electron-diffusion component of thermopower as a function of temperature increases and the phonon-drag component of thermopower is shifted to lower temperatures. The changes in the thermopower correlate well with changes in the microhardness. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3540-3542 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using an oblique-incidence optical reflectance difference technique, we study the kinetics of La0.67Ba0.33MnO3−δ (LBMO) epitaxy on SrTiO3(001) during pulsed-laser deposition. By monitoring the recovery of the optical response function from one-monolayer-deposited LBMO, we found that under the conditions studied, the epitaxy was rate limited by the oxidation of the as-deposited monolayer with an activation barrier of 1 eV/atom or 23 kcal/mol. The result reveals the origin of oxygen deficiency often found in manganite thin films. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 525-527 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that it is feasible to produce one- and two-dimensional nano-structure arrays by passing microsecond pulsed atomic beams through microsecond laser standing-wave patterns under completely off-resonant condition. This method enables fabrication of vertically heterogeneous nanostructures such as multilayers with one pulsed laser system. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 566-568 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ge0.5Si0.5 strained-layer pin photodiodes, in which multiple strained layers serve as the absorption region, have been fabricated. These devices exhibit an optical response at wavelengths beyond 1.3 μm at normal incidence. The measured external quantum efficiencies at an applied bias of 4 V are 17% at 0.85 μm and 1% at 1.3 μm, respectively. Excellent electrical characteristics evidenced by the avalanche breakdown at 20 V have also been demonstrated. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2190-2192 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A forward S-type bistability was observed in a Si diode with two double δ-doped Si tunnel junctions between the p and n contacts. The conductivity in the two branches of the bistable I–V curve changes by seven orders of magnitude. This, coupled with the all-silicon nature of the device, makes it a very attractive multistate device for practical applications. The bistability is explained by a mechanism, referred to as "band switching," which is supported by temperature dependence of the I–V characteristics. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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