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  • 1995-1999  (2)
  • Candida albicans  (1)
  • Excitons and related phenomena (including electron-hole drops)  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Quantification of thigmotropism (contact sensing) of Candida albicans and Candida tropicalis (1997)
    Springer
    Mycopathologia 138 (1997), S. 13-19 
    Details
    ISSN: 1573-0832
    Keywords: Candida albicans ; Candida tropicalis ; germ tube ; hypha ; thigmotropism
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract To quantify the thigmotropism, we adapted the our previous method using a chemotaxifilter system in combination with a bioluminescent adenosine triphosphate (ATP) assay based on firefly luciferase-luciferin system and analyzed the relationship between the ability of germ tube formation and thigmotropism of C. albicans and C. tropicalis. Both the ability to form germ tube and the amount of hyphae exhibiting thigmotropism varied depending upon both the species and strains of Candida. C. albicans formed more germ tubes than C. tropicalis. A good correlation was observed between the ability to form a germ tube and the capacity for thigmotropism, and the results gave a level of significance (p〈0.05). Further, SEM observation revealed that relatively long hyphae of C. tropicalis with penetrated through the pores of filter membrane. This phenomenon may be of importance in the development of pathogenesis of C. tropicalis as well as C. albicans.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1006849532064
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Pseudodirect biexcitons in GaAs/AlAs type-II superlattices (1995)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1629-1633 
    Details
    ISSN: 0392-6737
    Keywords: III–V semiconductors ; Excitons and related phenomena (including electron-hole drops) ; III–V compounds and systems ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary We report on the biexciton formation of the pseudodirect exciton consisting of the AlAs-X z electron and the GaAs-Γ heavy hole in (GaAs) m /(AlAs) m type-II superlattices withm=10, 12, and 13 monolayers. The photoluminescence lineshape of the pseudodirect exciton exhibits a doublet feature having an energy separation of ∼3 meV at the excitation power of the order of mW/cm2 in all the samples, and the low-energy band grows superlinearly. The transient profiles of the doublet photoluminescence band early indicate the biexciton formation: the delay of the rise of the biexciton photoluminescence on the low-energy side and its shorter decay time in comparison with the exciton photoluminescence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457255
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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