ISSN:
0392-6737
Keywords:
III–V semiconductors
;
Excitons and related phenomena (including electron-hole drops)
;
III–V compounds and systems
;
Conference proceedings
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Summary We report on the biexciton formation of the pseudodirect exciton consisting of the AlAs-X z electron and the GaAs-Γ heavy hole in (GaAs) m /(AlAs) m type-II superlattices withm=10, 12, and 13 monolayers. The photoluminescence lineshape of the pseudodirect exciton exhibits a doublet feature having an energy separation of ∼3 meV at the excitation power of the order of mW/cm2 in all the samples, and the low-energy band grows superlinearly. The transient profiles of the doublet photoluminescence band early indicate the biexciton formation: the delay of the rise of the biexciton photoluminescence on the low-energy side and its shorter decay time in comparison with the exciton photoluminescence.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF02457255
Permalink
