ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In order to develop a method to detect low-level oxygen in thin silicon crystals by photoluminescence (PL), a radiative carbon–oxygen center (C center: 0.79 eV) is formed in silicon crystals through carbon introduction by ion implantation. The PL intensity of the C center of the implanted sample is significantly increased by annealing the sample at 1000 °C followed by electron irradiation. The possibility of detecting a low concentration of oxygen (below 1×1015 atoms/cm3) in a layer thinner than 1 μm thick is seen. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.359847
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