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  • 1
    Electronic Resource
    Electronic Resource
    Location and depth profiling of Ne atoms implanted in a Nb crystal using a resonant nuclear reaction
    Amsterdam : Elsevier
    Physics Letters A 83 (1981), S. 175-178 
    Details
    ISSN: 0375-9601
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0375-9601(81)90879-3
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  • 2
    Electronic Resource
    Electronic Resource
    Hardening of KBr by heavy gamma irradiation at LNT
    Amsterdam : Elsevier
    Physics Letters A 43 (1973), S. 95-96 
    Details
    ISSN: 0375-9601
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0375-9601(73)90561-6
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  • 3
    Electronic Resource
    Electronic Resource
    Regrowth of the photoquenchable defect relating to the hopping conduction in arsenic-ion-implanted semi-insulating GaAs (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4488-4490 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The quenching phenomenon in Mott-type hopping conduction below 125 K has been observed in As+-ion-implanted semi-insulating GaAs. The crystallinity of the implanted layer was evaluated using Rutherford backscattering and Raman scattering methods. The hopping conduction was observed in the as-implanted and annealed samples. The as-implanted layer was amorphous, while the annealed layers remained crystalline, consisting of a disordered structure with a displacement fraction of ∼1021 cm−3. In the samples annealed at 500 °C, it is suggested that some of the As precipitates are located on Ga sites, leading to the disappearance of the A1 g Raman active mode of the As clusters. The hopping conduction was photoquenched as the defect concentration reached ∼6×1017 cm−3, indicating the regrowth of the AsGa antisite defects as a main component of EL2. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363423
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  • 4
    Electronic Resource
    Electronic Resource
    Enhanced photoluminescence detection of oxygen in silicon crystal by formation of a carbon–oxygen complex through carbon implantation and electron irradiation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4407-4410 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to develop a method to detect low-level oxygen in thin silicon crystals by photoluminescence (PL), a radiative carbon–oxygen center (C center: 0.79 eV) is formed in silicon crystals through carbon introduction by ion implantation. The PL intensity of the C center of the implanted sample is significantly increased by annealing the sample at 1000 °C followed by electron irradiation. The possibility of detecting a low concentration of oxygen (below 1×1015 atoms/cm3) in a layer thinner than 1 μm thick is seen. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359847
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  • 5
    Electronic Resource
    Electronic Resource
    Damage formation and substitutionality in 75As++-implanted diamond (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2986-2990 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rutherford backscattering spectrometry (RBS) has been used to study damage formation and substitutionality in synthetic diamonds implanted with 250-keV 75As++ at either 600 °C or room temperature. Lattice damage following implantation at 600 °C was substantially less than damage following room-temperature implantation and appears to be composed of a higher fraction of extended defects. A significant portion of the As implanted at 600 °C was found to be in substitutional lattice sites with substitutional fractions as high as 50%. Changing the ion flux by three orders of magnitude during high-temperature implantation had no effect on either residual damage or substitutionality as indicated by the RBS analysis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349326
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  • 6
    Electronic Resource
    Electronic Resource
    Molybdenum substitutional doping and its effects on phase transition properties in single crystalline vanadium dioxide thin film (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5311-5313 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molybdenum (Mo) doped vanadium dioxide thin films were synthesized using a Mo striped vanadium (V) target during pulsed laser ablation process. The film structure was characterized by high resolution x-ray diffraction, x-ray rocking curve and Rutherford backscattering/channeling measurements. The results show that the full width at half magnitude of the x-ray rocking curve is as narrow as 0.0074°, comparable to that of the (0001) sapphire substrate, 0.0042°, in this study. The ratio of the aligned-to-random backscattered yield reaches 5%, implying that the growth is that of the single crystalline epitaxy. The result of angular scans for both V and Mo atomic channelings reveals that Mo atoms successfully take sites of the V sublattice as a substitutional dopant. It has been noted that the degradation of the phase transition properties of the film upon doping is closely related to the conductivity in the semiconductor phase. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371519
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  • 7
    Electronic Resource
    Electronic Resource
    A crystalline hydrogenated carbon film obtained by plasma enhanced chemical vapor deposition (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1317-1321 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A hydrogenated carbon film in a crystalline form has been prepared on Si (001) using a radio frequency plasma enhanced chemical vapor deposition process. The crystalline film is metastable and has polymer-like features with a mass density of about 1.20 g/cm3 and an optical band gap of about 2.75 eV. The stability of the structure and properties of the film was studied by thermal annealing at successively higher temperatures in the air. Upon heating, the film showed a two-step structure change which resulted in a two-step change in the film properties. The relationship between the properties and the bonded hydrogen in the film was also discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370888
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  • 8
    Electronic Resource
    Electronic Resource
    Effect of mass-selected ion species on structure and properties of diamond-like carbon films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1959-1964 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond-like carbon (DLC) films were prepared with mass-selected C+, CH2+, CH3+, and CH4+ ions, and the dependence of film microstructures and properties on ion species was investigated with micro-Raman spectroscopy, optical band gap measurement and atomic force microscopy (AFM). The results indicate that highly sp3 bonded DLC films are achieved using carbon and hydrocarbon ions with ion energy of 100 eV. AFM results exhibit that the surface roughness for these films is very low, which is associated with the formation of a dense diamond-like phase as suggested by the subplantation model. The thermal stability of the films were investigated in the temperature region of 200–800 °C. Raman measurements show that the D peak evolves at much lower temperatures for the film prepared with CH4+ than that for the film prepared with C+ ions during annealing. The results indicate that hydrogen-free carbon films have a much better thermal stability than hydrogenated carbon films. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1333739
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  • 9
    Electronic Resource
    Electronic Resource
    Structural, optical, and electrical properties of laser deposited FeTiO3 films on C- and A-cut sapphire substrates (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7433-7437 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: FeTiO3 (FTO) thin films were epitaxially grown on two kinds of α-Al2O3 substrates [(0001) and (112¯0)] through pulsed laser deposition under a mixtured gas ambient of 5% oxygen with argon used as the balance. The x-ray diffraction (XRD) and XRD pole figure measurements show parallel growth relationships of the films on these two kinds of substrates, (0006)(parallel)(0006), (112¯0)(parallel)(112¯0), respectively. The interplane XRD pole texture measurement also shows that a parallel relationship exists. Rutherford backscattering spectrometry and Auger electron spectrometry analyses show that the films are stoichiometric and without distinguishable impurities. The optical properties were characterized in the ultraviolet-visible region, and 3.55 eV was obtained for the first time as the band gap of these epitaxial and stoichiometric FTO films. This value in the present high quality films is higher than the band gap reported for bulk material, 2.58 eV. The measurement of the electrical resistance in a quite wide temperature range shows typical semiconductor properties. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369374
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  • 10
    Electronic Resource
    Electronic Resource
    Self-mediated growth of single-crystal and entirely (111)-oriented C60 films on alkali halide substrates (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1686-1688 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied C60 film growth on alkali halide substrates, KCl (200), KBr (200), and NaCl (200), by using two or three C60 monolayers, which grow at a very low deposition rate, as a self-mediating layer. Continuously and entirely (111)-oriented epitaxial C60 films have been grown in a quite wide temperature range, 40–120 °C, and at very different deposition rates, from 1.5 to 35 Å/min. More over, single-crystal and entirely (111)-oriented C60 films with a grain size of 1–3 μm could be also grown at relative high temperature and low deposition rate, approximately 120 °C and 1.5 Å/min, respectively. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123655
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