ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
FeTiO3 (FTO) thin films were epitaxially grown on two kinds of α-Al2O3 substrates [(0001) and (112¯0)] through pulsed laser deposition under a mixtured gas ambient of 5% oxygen with argon used as the balance. The x-ray diffraction (XRD) and XRD pole figure measurements show parallel growth relationships of the films on these two kinds of substrates, (0006)(parallel)(0006), (112¯0)(parallel)(112¯0), respectively. The interplane XRD pole texture measurement also shows that a parallel relationship exists. Rutherford backscattering spectrometry and Auger electron spectrometry analyses show that the films are stoichiometric and without distinguishable impurities. The optical properties were characterized in the ultraviolet-visible region, and 3.55 eV was obtained for the first time as the band gap of these epitaxial and stoichiometric FTO films. This value in the present high quality films is higher than the band gap reported for bulk material, 2.58 eV. The measurement of the electrical resistance in a quite wide temperature range shows typical semiconductor properties. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.369374
