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  • 1995-1999  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1326-1328 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The blue Mg induced 2.8 eV photoluminescence (PL) band in metalorganic chemical vapor deposition grown GaN has been studied in a large number of samples with varying Mg content. It emerges near a Mg concentration of 1×1019 cm−3 and at higher concentrations dominates the room temperature PL spectrum. The excitation power dependence of the 2.8 eV band provides convincing evidence for its donor–acceptor (D–A) pair recombination character. It is suggested that the acceptor A is isolated MgGa while the spatially separated, deep donor (430 meV) D is attributed to a nearest-neighbor associate of a MgGa acceptor with a nitrogen vacancy, formed by self-compensation. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1837-1839 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature and excitation power dependence of a bound exciton photoluminescence line S with a localization energy Q=11.5 meV has been studied in undoped and moderately Mg-doped wurtzite GaN of high resistivity. The data provide strong evidence that line S is due to recombination of excitons bound to ionized shallow donors. The consistency of this assignment with theoretical predictions is demonstrated. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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