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  • 1
    Electronic Resource
    Electronic Resource
    Photoconductivity transients and photosensitization phenomena in semi-insulating GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5181-5184 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model is proposed for the photoconductivity transients and the photosensitization in semi-insulating GaAs induced by low-intensity light at low temperatures. During photoconductivity transients, the lifetime of free carriers is shown to be a time-dependent quantity, determined mainly by the trapping processes, recombination being negligible. Photosensitization and thermal restoration are explained by the filling and emptying of deep traps. Contrary to some other explanations, in this model it is not necessary to utilize the metastability of EL2 or other defects. The model is verified experimentally by an original use of the thermally stimulated current method. It is also possible to determine values of capture cross sections for dominant traps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353795
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  • 2
    Electronic Resource
    Electronic Resource
    EL2 related deep traps in semi-insulating GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 278-280 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Processes induced by below-the-gap illumination and related to defects having deep levels in liquid-encapsulated Czochralski semi-insulating GaAs crystals were studied. It was found that the dynamics of both optical quenching and thermal recovery (above 125 K) of thermally stimulated current signal related to six deep traps was the same as that of the EL2 related photoconductivity signal. Analysis of these results gives evidence that some of the observed deep traps in GaAs are complex defects, which might include as their constituent the EL2 defect. It means that EL2 could serve as a gettering center for other native defects and/or impurities. The proposed model is in accordance with other recently published results associating several deep traps (EL6, EL3, EL5, and EL14) with EL2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104660
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  • 3
    Electronic Resource
    Electronic Resource
    Nature of the 2.8 eV photoluminescence band in Mg doped GaN (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1326-1328 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The blue Mg induced 2.8 eV photoluminescence (PL) band in metalorganic chemical vapor deposition grown GaN has been studied in a large number of samples with varying Mg content. It emerges near a Mg concentration of 1×1019 cm−3 and at higher concentrations dominates the room temperature PL spectrum. The excitation power dependence of the 2.8 eV band provides convincing evidence for its donor–acceptor (D–A) pair recombination character. It is suggested that the acceptor A is isolated MgGa while the spatially separated, deep donor (430 meV) D is attributed to a nearest-neighbor associate of a MgGa acceptor with a nitrogen vacancy, formed by self-compensation. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120983
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  • 4
    Electronic Resource
    Electronic Resource
    Thermoelectric effect spectroscopy of deep levels—application to semi-insulating GaAs (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2636-2638 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new method, thermoelectric effect spectroscopy, is proposed for the analysis of deep levels in semi-insulating materials. Besides the information on energy position and relative concentrations of traps, the main advantage of the method is its ability to determine the trap sign, i.e., the method is capable to resolve electron traps from hole traps. The proposed method is very simple for application. It is also shown how in combination with other techniques it can give a complete picture about trap-filling dynamics during low-temperature transient phenomena caused by illumination. The applicability and validity of the method are demonstrated on GaAs in which both electrons and hole traps are found.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102860
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  • 5
    Electronic Resource
    Electronic Resource
    Optically enhanced photoconductivity in semi-insulating gallium arsenide (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 810-812 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time evolution of photoconductivity of semi-insulated gallium arsenide illuminated at low temperatures with monochromatic 0.7–1.8 eV photons was studied. For low light intensity the photosensitivity increases with time by several orders of magnitude and exhibits different dynamics for above-the-gap and below-the-gap energy photons. For various photosensitivity stages the concentration of charge trapped in deep traps was determined by measuring thermally stimulated current. Six deep traps in the 85–250 K temperature range were observed. Good correlation between the photosensitivity and the total concentration of trapped charge was found. The increase of photosensitivity is interpreted as the increase of lifetime of optically created free holes due to the trapping of electrons, which therefore are not available for recombination. The same interpretation also gives a new insight in previously published results on increased photosensitivity in gallium arsenide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100854
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  • 6
    Electronic Resource
    Electronic Resource
    Ionized donor bound excitons in GaN (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1837-1839 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature and excitation power dependence of a bound exciton photoluminescence line S with a localization energy Q=11.5 meV has been studied in undoped and moderately Mg-doped wurtzite GaN of high resistivity. The data provide strong evidence that line S is due to recombination of excitons bound to ionized shallow donors. The consistency of this assignment with theoretical predictions is demonstrated. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119415
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  • 7
    Electronic Resource
    Electronic Resource
    Trap-induced photoconductivity in semi-insulating GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1408-1411 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoconductivity of semi-insulating gallium arsenide illuminated with monochromatic photons in the 0.7–1.8 eV range has been studied. It has been found that photoconductivity strongly depends on the occupancy of deep traps present in the material, so that the photoconductivity measured for the full trap regime is several orders of magnitude larger than one taken when the traps are empty. By selective emptying or filling of traps it was possible to identify the contribution of each particular trap to the photoconductivity enhancement in different temperature intervals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345697
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  • 8
    Electronic Resource
    Electronic Resource
    Crystal data for AgGaxIn1−xSe2 and CuGaxIn1−xSe2 (1980)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 13 (1980), S. 311-315 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Series of chalcopyrite-type solid solutions AgGaxIn1−xSe2 and CuGaxIn1−xSe2, 0≤x≤1, have been prepared by direct synthesis from the melt. The space group is I\bar 42d (No. 122), Z = 4. The unit-cell parameters a and c and the ratio c/a change linearly with x. Powder data at 298 K are given for AgGaSe2, AgGa0.80In0.20Se2, AgGa0.70In0.30Se2, AgGa0.40In0.60Se2, AgGa0.20In0.80Se2 and AgInSe2, and for CuGaSe2, CuGa0.60In0.40Se2, CuGa0.30In0.70Se2 and CuInSe2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889880012149
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  • 9
    Electronic Resource
    Electronic Resource
    Crystal data for CuGaxIn1−xTe2 (1983)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 16 (1983), S. 576-576 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: A series of samples in the system CuGaxIn1−xTe2, 0 ≤ x ≤ 1, has been synthesized and characterized by X-ray diffraction. All the samples have a chalcopyrite-type structure, the unit-cell parameters a and c and the ratio c/a changing linearly with x. The unit-cell parameters for the compounds with x = 1, 0.80, 0.65, 0.50, 0.30, 0.15 and 0 and the powder diffractometer data for x = 1, 0.5 and 0 are given at 298 K. CuGaTe2: a = 6.021(2), c = 11.937(5) Å, V = 432.75 Å3, Dx = 5.96 g cm− 3; CuGa0.80In0.20Te2: a = 6.053(2), c = 12.039(4) Å, V = 441.09 Å3, Dx = 5.99 g cm− 3; CuGa0.65In0.35Te2: a = 6.084(2), c = 12.107(7) Å, V = 448.14 Å3, Dx = 5.99 g cm−3; CuGa0.50In0.50Te2: a = 6.107(2), c = 12.177(7) Å, V = 454.15 Å3, Dx = 6.01 g cm−3; CuGa0.30In0.70Te2: a = 6.144(2), c = 12.296(7) Å, V = 464.16 Å3, Dx = 6.01 g cm−3; CuGa0.15In0.85Te2: a = 6.168(3), c = 12.355(10) Å, V = 470.04 Å3, Dx = 6.03 g cm−3; CuInTe2: a = 6.195(2), c = 12.418(6) Å, V = 476.58 Å3, Dx = 6.04 g cm−3. The JCPDS Diffraction File Nos. are: 34-1500 for CuGaTe2; 34-1498 for CuInTe2; 34-1499 for CuGa0.50In0.50Te2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S002188988301105X
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  • 10
    Electronic Resource
    Electronic Resource
    X-ray diffraction study of the system Ga2Se3–In2Te3 (1983)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 16 (1983), S. 415-419 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: A series of solid solutions in the system (GaxIn1−x)2(SexTe1−x)3, 1 ≥ x ≥ 0, were prepared by direct synthesis from α-Ga2Se3 and α-In2Te3. The samples (powders and single crystals) were examined at room temperature by X-ray diffraction. In the whole range of concentrations cubic phases of defect zinc-blende types (ZB) are present. The unit-cell parameter, aZB, continuously increases with the In2Te3 content, undergoing an abrupt change at x ∼0.5. In the Ga2Se3-rich region the diffraction lines show complex profiles, similar to the ones of α-Ga2Se3 and of (GaxIn1−x)2Se3 in the Ga-rich region. In the In2Te3-rich region the diffraction pattern is similar to that of the disordered, β, phase of In2Te3. In a narrow range from x∼0.6 to x∼0.5 a two-phase region of these phases exists. For small values of x a superstructure appears, with the unit-cell parameter 3aZB, isostructural with the ordered, α, phase of In2Te3(F{\bar 4}3m). The JCPDS Diffraction File No. for α-In2Te3 is 33-1488.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889883010717
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