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  • 1995-1999  (4)
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  • 1
    Electronic Resource
    Electronic Resource
    Lateral damage extension during masked ion implantation into GaAs (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4303-4307 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied both experimentally and theoretically the generation of damage in GaAs due to ion implantation through mask openings of small dimensions. We show that it is possible to master the generation of damage, i.e., the amorphization phenomenon in the direction perpendicular to the ion beam and close to the mask edges. A theoretical model is used to simulate the ion implantation process and damage accumulation through Ti–Au masks. After comparing the shape of the crystalline/amorphous interfaces as revealed by cross-sectional electron microscopy with our simulations, this model is used to predict the evolution of the two-dimensional damage distributions beneath the mask edges as functions of ion beam and implantation mask parameters. Undamaged regions of nanometer dimensions can be preserved even when using masks of reasonable dimensions (100–200 nm). This can be done only by adjusting the ion beam parameters through the accurate simulation of the two-dimensional damage generation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363378
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    A low temperature focused ion beam system: Application to in situ processing of high Tc superconducting devices (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 446-450 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A modified focused ion beam (FIB) equipment is described. It enables real time imaging by electron scanning microscopy during the FIB milling of cooled samples down to 82 K with liquid N2 cooling, or down to 25 K with liquid He cooling. Experimental results on the patterning of high Tc YBaCuO superconducting thin films are given which show the possibility of "in situ'' control of the critical current of micro or nanosuperconducting bridges during the milling. The application of this FIB system to the design of a microthermometer, operating in the pW(overdot)/(square root of)Hz range, and of a SQUID, whose Josephson effects correspond to a coherent vortex flow in nanobridges, is detailed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146625
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Focused ion beam nanolithography on AlF3 at a 10 nm scale (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2049-2051 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the potential use of AlF3 thin films (50 nm thick) as negative inorganic resist layers for focused ion beam nanolithography. We demonstrate that 10 nm-wide lines can be fabricated using a Ga+ beam of 30 keV incident energy. The resist sensitivity of 1010 Ga+/cm is two orders of magnitude lower than for polymethylmethacrylate organic resist. We emphasize that this low sensitivity associated with the exposure mechanism of the resist minimize the influence of the tails of the current distribution within the ion spot. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118810
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    GaAs/AlGaAs quantum wires fabricated by SiO2 capping-induced intermixing (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 61-63 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that selective intermixing of GaAs/AlGaAs quantum well heterostructures induced by SiO2 capping and subsequent annealing can be spatially localized on a length scale compatible with the lateral confinement of carriers into quantum wires. Low temperature optical spectroscopy measurements including linear polarization anisotropy analysis show evidence of the formation of one-dimensional subbands. A mechanism involving the ability of the thermal stress field generated in the heterostructure by the patterned SiO2 film to pilot the diffusion of the excess Ga vacancies, which are responsible for the enhanced interdiffusion under SiO2 is suggested to account for the high lateral selectivity achievable with this novel process. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118119
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    Paper (German National Licenses)
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