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  • 1
    Electronic Resource
    Electronic Resource
    High critical current density obtained by focused ion beam patterning of high temperature superconducting thin films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 270-272 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In an attempt to pattern microbridges in a superconducting line by focused ion beam milling, we have obtained a very high critical current density: 6 × 108 A/cm2 at 77 K. Direct focused ion milling leads to microbridge structures as narrow as 200 nm. Ultrahigh current densities have already been reported by H. Jiang [Phys. Rev. Lett. 66, 1785 (1991)] in such "nanobridges.'' We have also measured size-dependent critical current densities. We take into account the electrical field criterion and give a very simple interpretation of our experimental results based on the possibility of strong pinning in a very narrow bridge and the inhomogeneity of our films at a submicronic scale.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352126
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  • 2
    Electronic Resource
    Electronic Resource
    Kinetic aspects of the growth of hydrogen induced platelets in SiC (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8415-8419 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Annealing of heavily hydrogen-implanted silicon carbide (SiC) leads to the formation of one specific type of defect: hydrogen induced platelets. These defects may be regarded as two-dimensional precipitates of H atoms stored in a stable configuration. In this article, we have studied the growth kinetics of these platelets upon annealing in the 800–1000 °C range by transmission electron microscopy. We show that the growth of these defects proceeds through the exchange of H atoms with the result that larger ones grow at the expense of the smaller ones during annealing. This process can be described in terms of a conservative Ostwald ripening mechanism. The activation energy for this growth is found to be about 3.4 eV, a value similar to that observed for the "effective" diffusion of H in heavily H-implanted SiC. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373556
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  • 3
    Electronic Resource
    Electronic Resource
    A low temperature focused ion beam system: Application to in situ processing of high Tc superconducting devices (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 446-450 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A modified focused ion beam (FIB) equipment is described. It enables real time imaging by electron scanning microscopy during the FIB milling of cooled samples down to 82 K with liquid N2 cooling, or down to 25 K with liquid He cooling. Experimental results on the patterning of high Tc YBaCuO superconducting thin films are given which show the possibility of "in situ'' control of the critical current of micro or nanosuperconducting bridges during the milling. The application of this FIB system to the design of a microthermometer, operating in the pW(overdot)/(square root of)Hz range, and of a SQUID, whose Josephson effects correspond to a coherent vortex flow in nanobridges, is detailed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146625
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  • 4
    Electronic Resource
    Electronic Resource
    Lateral damage extension during masked ion implantation into GaAs (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4303-4307 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied both experimentally and theoretically the generation of damage in GaAs due to ion implantation through mask openings of small dimensions. We show that it is possible to master the generation of damage, i.e., the amorphization phenomenon in the direction perpendicular to the ion beam and close to the mask edges. A theoretical model is used to simulate the ion implantation process and damage accumulation through Ti–Au masks. After comparing the shape of the crystalline/amorphous interfaces as revealed by cross-sectional electron microscopy with our simulations, this model is used to predict the evolution of the two-dimensional damage distributions beneath the mask edges as functions of ion beam and implantation mask parameters. Undamaged regions of nanometer dimensions can be preserved even when using masks of reasonable dimensions (100–200 nm). This can be done only by adjusting the ion beam parameters through the accurate simulation of the two-dimensional damage generation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363378
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  • 5
    Electronic Resource
    Electronic Resource
    GaAs/AlGaAs quantum wires fabricated by SiO2 capping-induced intermixing (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 61-63 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that selective intermixing of GaAs/AlGaAs quantum well heterostructures induced by SiO2 capping and subsequent annealing can be spatially localized on a length scale compatible with the lateral confinement of carriers into quantum wires. Low temperature optical spectroscopy measurements including linear polarization anisotropy analysis show evidence of the formation of one-dimensional subbands. A mechanism involving the ability of the thermal stress field generated in the heterostructure by the patterned SiO2 film to pilot the diffusion of the excess Ga vacancies, which are responsible for the enhanced interdiffusion under SiO2 is suggested to account for the high lateral selectivity achievable with this novel process. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118119
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  • 6
    Electronic Resource
    Electronic Resource
    Focused ion beam nanolithography on AlF3 at a 10 nm scale (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2049-2051 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the potential use of AlF3 thin films (50 nm thick) as negative inorganic resist layers for focused ion beam nanolithography. We demonstrate that 10 nm-wide lines can be fabricated using a Ga+ beam of 30 keV incident energy. The resist sensitivity of 1010 Ga+/cm is two orders of magnitude lower than for polymethylmethacrylate organic resist. We emphasize that this low sensitivity associated with the exposure mechanism of the resist minimize the influence of the tails of the current distribution within the ion spot. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118810
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  • 7
    Electronic Resource
    Electronic Resource
    Atomistic simulations of extrinsic defects evolution and transient enhanced diffusion in silicon (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 940-942 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, a physically based model describing the kinetic evolution of extrinsic defects during annealing is presented. The fundamental concepts of Ostwald ripening and formation energy of extrinsic defects are combined in this model, which has been tested against some classical experiments concerning (i) transient enhanced diffusion (TED) of dopants in conjunction with the dissolution of {113} defects and (ii) the "pulsed" TED observed in the case of ultralow energy implants where the surface acts as a strong sink for the silicon interstitial atoms. We show that a full understanding of the formation and the evolution of extended defects leads to a correct prediction of dopant enhanced diffusion in all experimental conditions. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1344566
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