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  • 1
    Electronic Resource
    Electronic Resource
    Erratum: "Low temperature photoluminescence of Te-doped GaSb grown by liquid phase electroepitaxy'' [J. Appl. Phys. 77, 5902 (1995)] (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1185-1185 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362713
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  • 2
    Electronic Resource
    Electronic Resource
    Low-temperature photoluminescence of Te-doped GaSb grown by liquid phase electroepitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5902-5909 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results of a low-temperature (4.5 K) photoluminescence study of Te-doped GaSb layers grown by liquid phase electroepitaxy are reported. A doubly ionizable native residual acceptor (A/A−) with shallow and deep levels is observed at 34 and 97 meV, respectively, another native acceptor level for GaSb (B) is seen at 54 meV, and two Te-related acceptor levels (C and D) are found at 68 and 83 meV, respectively. In addition, a few Te-related deep levels are also seen between 114–129 meV at higher Te concentrations. The relative dominance of each of these transitions depends on the degree of Te compensation and the incident excitation intensity. At low excitation intensities, the spectra are dominated by deep impurity levels and with increasing intensity the transitions associated with the shallow acceptors become more prominent. The limited data on the PL integrated intensity dependance on excitation intensity further confirms the nature of these transitions. And finally, we also present preliminary results of our PL studies on Te-doped GaInAsSb alloys. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359170
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  • 3
    Electronic Resource
    Electronic Resource
    Exciton binding energy in a quantum wire in the presence of a magnetic field (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1097-1104 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A calculation of the ground-state energy of an exciton confined in a cylindrical quantum wire in the presence of a uniform magnetic field is reported as a function of wire radius, using a variational approach. It is assumed that the magnetic field is applied parallel to the axis of the wire. The calculations have been performed using a suitable variational wave function taken as a product of the appropriate confining confluent hypergeometric functions and a hydrogenic function for infinite and finite confining potentials. For a given value of the magnetic field, the binding energy is found to be larger than the zero-field case. This behavior is explained in terms of an average electron-hole separation, which depends on the wire radius, and the magnetic-field strength. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359582
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  • 4
    Electronic Resource
    Electronic Resource
    Properties of low-pressure chemical vapor epitaxial GaN films grown using hydrazoic acid (HN3) (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2197-2207 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown high-quality GaN films on sapphire using a new nitrogen precursor, hydrazoic acid (HN3). Films were grown at 600 °C on (0001) sapphire substrates in a low-pressure chemical-vapor-deposition system using triethylgallium and hydrazoic acid as precursors. Subsequently, we have conducted a complete study of the surface, structural, electrical, and optical properties of these GaN films, and our early results are very encouraging. All films were of wurtzite crystal structure, slightly polycrystalline, and n type at about 2×1017 cm−3. We find the films to be efficient light emitters in the near-band edge region of the spectrum. Analysis of the emission energies and kinetics suggests that the midgap emission results from a superimposed deep-donor-to-shallow-acceptor emission and a deep-donor-to-valence-band emission, where the deep donor consists of a distribution of energy levels, thereby yielding a broad emission band. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364253
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  • 5
    Electronic Resource
    Electronic Resource
    Comment on "Optical investigations of AlGaN on GaN epitaxial films" [Appl. Phys. Lett. 74, 2456 (1999)] (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2334-2335 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125007
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  • 6
    Electronic Resource
    Electronic Resource
    Binding energies of excitons in ionic quantum well structures (1995)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1343-1347 
    Details
    ISSN: 0392-6737
    Keywords: Excitons and related phenomena (including electron-hole drops) ; Polarons and electron-phonon interactions ; Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds) ; III-V compounds and systems ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary We have calculated the binding energies of excitons in quantum well structures based on ionic semiconductors by including the electron-hole interactions with the longitudinal-optical-phonon field. We have taken into account these interactions by using different effective interaction potentials between the electron and the hole as derived by Haken, Aldrich and Bajaj, and Pollman and Buttner. We have calculated the binding energies of excitons in several ionic quantum well structures as functions of well width using these effective potentials following a variational approach. We find that the values of the exciton binding energies calculated using these potentials are always larger than those, obtained using a Coloumb potential screened by static dielectric constant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457207
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