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  • 1995-1999  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5828-5833 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Exchange biased magnetic tunnel junction (MTJ) structures are shown to have useful properties for forming magnetic memory storage elements in a novel cross-point architecture. MTJ elements have been developed which exhibit very large magnetoresistive (MR) values exceeding 40% at room temperature, with specific resistance values ranging down to as little as ∼60 Ω(μm)2, and with MR values enhanced by moderate thermal treatments. Large MR values are observed in magnetic elements with areas as small as 0.17 (μm)2. The magnetic field dependent current–voltage characteristics of an MTJ element integrated with a silicon diode are analyzed to extract the MR properties of the MTJ element itself. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5621-5625 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the structural and magneto-optical properties of postdeposition oxidized Co thin films. The oxidization process leads to the formation of a double-layered structure of fcc Co3O4 on top of metallic Co. The magneto-optical Kerr effect (MOKE), measured in the range 0.8 eV≤EPh≤5.5 eV reveals characteristic dependencies of the MOKE spectra on annealing temperature and time. In particular, we observe resonance-type enhancements of the Kerr effects by up to a factor of 10 compared with unannealed metallic Co. The experimental data are quantitatively reproduced by bilayer optical stack calculations. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1930-1932 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin polyimide films with dispersed nano-foam morphology have been prepared for the purpose of obtaining low dielectric polymer insulators for microelectronic applications. They were obtained by utilizing micro phase-separated triblock copolymers where the thermally stable polyimide matrix component was derived from pyromellitic dianhydride (PMDA) with 1,1-bis(4-aminophenyl)-1-phenyl-2,2,2-trifluoroethane (3F) and a thermally labile poly(propylene oxide)(PO) component comprised the outside block of the ABA triblock architecture. TEM studies show that the initial irregular nanoscale phase-separated morphology of polyimide triblock copolymers are mostly maintained in the final nano-foam films upon thermal decomposition of the dispersed PO component. The nano-foam polyimide films exhibit significantly lower dielectric constants ε′ (e.g., 2.3 at 19% porosity) as compared with ε′≈2.9 for the homopolymer, as predicted by Maxwell–Garnett theory, with the nano-pore structures remaining stable at 350 °C. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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