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  • 1995-1999  (3)
  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1770-1772 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter presents a simple approach to characterize process-induced charging damage in the gate oxide of metal-oxide-semiconductor (MOS) devices. The method uses the monitoring of voltage transients during constant-current stress performed on plasma-damaged and reference devices. The difference in transients allows direct extraction of the amount of electron traps created in the oxide by charging currents during processing. The method is verified by experimental simulation and applied to extract the density of electron traps introduced in the oxide by process-induced charging. This technique is a fast and efficient approach to assess device damage and extract physical parameters of generated traps which can be used later for lifetime prediction in reliability simulators. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1826-1828 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The letter reports an observation of a new degradation mechanism in thermal silicon dioxide layers on silicon, namely generation of hole traps under high-field stressing of metal-oxide-semiconductor (MOS) structure. Excess hole trapping due to newly generated hole traps is observed by substrate hot-hole injection in 9 nm oxide of p-channel MOS transistors after high-field Fowler-Nordheim stress followed by standard post-metallization annealing in nitrogen. The concentration of generated traps has a weak stress-polarity dependence and increases with electron fluence during degrading stress. Relaxation behavior under switching oxide fields indicates that the nature of hole trapping sites is different from anomalous positive charge centers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Genetic resources and crop evolution 46 (1999), S. 469-475 
    ISSN: 1573-5109
    Keywords: foliar blight ; germplasm ; resistance ; Triticum aestivum ; wheat
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract One thousand three hundred and eighty-seven spring wheat germplasm (Triticum aestivum L.) lines belonging to the Indian and CIMMYT wheat programmes were evaluated for their tolerance to foliar blight disease for three consecutive years i.e., from 1994 to 1997. Disease severity at six different growth stages, beginning from tillering to late milk stage, was recorded. None of the genotypes showed immunity to the disease. Of 43 lines showing resistant reaction, a major proportion (25) was represented by CIMMYT material. Comparatively, Indian germplasm lines tended to be more susceptible at more advanced growth stages. Area Under Disease Progress Curve (AUDPC) and Apparent Infection Rate (r) values of resistant lines were much lower than those of susceptible ones, but lower AUDPC in some of the resistant lines did not correspond to a lower 'r' value. Most of the resistant lines were derived from Seri, Myna, Bau, kauz, Hork 's' and Aegilops tauschii Coss.
    Type of Medium: Electronic Resource
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