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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1770-1772 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter presents a simple approach to characterize process-induced charging damage in the gate oxide of metal-oxide-semiconductor (MOS) devices. The method uses the monitoring of voltage transients during constant-current stress performed on plasma-damaged and reference devices. The difference in transients allows direct extraction of the amount of electron traps created in the oxide by charging currents during processing. The method is verified by experimental simulation and applied to extract the density of electron traps introduced in the oxide by process-induced charging. This technique is a fast and efficient approach to assess device damage and extract physical parameters of generated traps which can be used later for lifetime prediction in reliability simulators. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1826-1828 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The letter reports an observation of a new degradation mechanism in thermal silicon dioxide layers on silicon, namely generation of hole traps under high-field stressing of metal-oxide-semiconductor (MOS) structure. Excess hole trapping due to newly generated hole traps is observed by substrate hot-hole injection in 9 nm oxide of p-channel MOS transistors after high-field Fowler-Nordheim stress followed by standard post-metallization annealing in nitrogen. The concentration of generated traps has a weak stress-polarity dependence and increases with electron fluence during degrading stress. Relaxation behavior under switching oxide fields indicates that the nature of hole trapping sites is different from anomalous positive charge centers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1439-0523
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Helminthosporium leaf blight (HLB) is the most important disease constraint to wheat (Triticum aestivum L.) cultivation in the eastern Gangetic Plains of South Asia. A Helminthosporium Monitoring Nursery (HMN) including potential adapted and exotic sources of HLB resistance was developed in Bangladesh, India and Nepal to assess the stability of genetic resistance across locations. The 8th, 9th and 10th HMN assessed the HLB resistance and agronomic traits of 17 wheat genotypes across 20 environments of Bangladesh, India and Nepal in the 1999-2000, 2000-2001 and 2001-2002 cropping seasons, respectively. The area under the disease progress curve (AUDPC) for HLB, grain yield, thousand-kernel weight (TKW), days to heading, days to maturity, and plant height were examined. The 17 genotypes showed a range of variability for disease and agronomic characters. Disease severity (AUDPC) differed in the 3 years and showed the highest values in 2002. The increase in AUDPC in 2002 caused the lowest grain yield, with an average 18% reduction due to HLB. A few genotypes (SW 89-5422, Yangmai-6 and Ning 8201) appeared to have stable HLB resistance across environments. However, most of the higher-yielding genotypes, except BL 1883, were unstable. The results suggest that careful selection of HLB resistance with acceptable grain yield, TKW and plant height may be possible using the wheat genotypes included in the HMN.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Plant breeding 123 (2004), S. 0 
    ISSN: 1439-0523
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Three F1 progenies and their families in the segregating generations (F3, F4, F5 and F6), obtained after crossing resistant × susceptible wheat genotypes were studied in the field to determine the genetics of resistance to spot blotch caused by Bipolaris sorokiniana. Spot blotch scores in the F1 generation showed absence of dominance. Individually threshed F2 plants were used to advance the generations. Progenies (200-250) of resistant genotypes Acc. No. 8226, Mon/Ald, Suzhoe#8 crossed with susceptible ‘Sonalika’ were evaluated in the F3, F4, F5 and F6 generations under induced epiphytotic conditions. Based on disease score distribution in individual progeny rows, F3 progenies were grouped into four classes: homozygous resistant, homozygous susceptible, segregating resistant and segregating susceptible. Resistance appeared to be under the control of three additive genes. The presence of three genes was also noted in the distribution of F4 and F5 lines. In the case of F6 progeny rows, both quantitative and qualitative models were used to estimate the number of segregating genes based on a 2-year trial. It appeared that resistance to spot blotch was controlled by the additive interaction of more than two genes, possibly only three.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 928-936 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shubnikov–de Haas oscillations and geometrical magnetoresistance measurements are used to determine the two most important parameters, channel concentration and mobility, respectively, for high electron mobility transistors. To deduce useful data from measurements, the theory of the Shubnikov–de Haas oscillation for the two-dimensional electrons is derived and discussed in detail. The experimental data for the channel concentration as a function of gate voltage is used to check the accuracy of the charge-control law. We also derive a simple formula of the geometrical magnetoresistance to calculate the mobility for any aspect ratio. The concentration and mobility deduced from the Shubnikov–de Haas and geometrical magnetoresistance measurements give us insight on the nature and properties of the devices. The experimental data shows that the impurity scattering is the dominant mechanism for the low channel concentration. The maximum transconductance occurs at a compromise between the charge-control ability of the gate voltage and the channel mobility. Near the cutoff region the decrease of the conductivity is due to the decrease of both the channel concentration and the mobility.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Annals of Physics 22 (1963), S. 438-480 
    ISSN: 0003-4916
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Annals of Physics 42 (1967), S. 81-96 
    ISSN: 0003-4916
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Annals of Physics 20 (1962), S. 1-19 
    ISSN: 0003-4916
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Inorganic and Nuclear Chemistry 37 (1975), S. 45-49 
    ISSN: 0022-1902
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    International Journal of Non-Linear Mechanics 11 (1976), S. 191-205 
    ISSN: 0020-7462
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
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