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  • 1
    Electronic Resource
    Electronic Resource
    Effect of thermal annealing on Te precipitates in CdTe wafers studied by Raman scattering and cathodoluminescence (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2806-2808 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A combination of Raman scattering and cathodoluminescence techniques has been used to study the spatial distribution of Te precipitates in the volume of CdTe wafers. Starting with the as-grown crystals with random distribution of precipitates over the whole volume, improvement at different stages of thermal annealing is demonstrated. As-grown p-CdTe wafers were annealed at 500–600 °C either in Ga melt or in Cd vapor for 2 or 22 h. The kinetics of dissolution of Te precipitates was found to be similar for both the Ga melt and Cd vapor annealing processes. Short-time annealing causes the disappearance of small Te precipitates, while the larger ones, 5–10 μm in size which decorate the extended structural defects, still remain. After a long-time annealing, the complete disappearance of Te precipitates occurs in the wafers volume. Interestingly, it was observed that the disappearance of Te precipitates during annealing starts in the central part of the bulk wafer and is followed by a precipitate gettering at the wafer surface. This implies that it is possible to obtain precipitate-free CdTe wafers by postgrowth annealing. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358687
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  • 2
    Electronic Resource
    Electronic Resource
    Cathodoluminescence characterization of Ge-doped CdTe crystals (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1992-1995 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cathodoluminescence (CL) microscopic techniques have been used to study the spatial distribution of structural defects and the deep levels in CdTe:Ge bulk crystals. The effect of Ge doping with concentrations of 1017 and 1019 cm−3 on the compensation of VCd in CdTe has been investigated. Dependence of the intensity distribution of CL emission bands on the dopant concentration has been studied. Ge doping causes a substantial reduction of the generally referred to 1.40 eV luminescence, which is often present in undoped CdTe crystals, and enhances the 0.91 and 0.81 eV emissions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360173
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  • 3
    Electronic Resource
    Electronic Resource
    Cluster adsorption on metallic surfaces: Structure and diffusion in the Cu/Pd(110) and Pd/Pd(110) systems (1995)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 102 (1995), S. 605-610 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We investigate structural and diffusion properties of CuN and PdN (with N going from 1 to 30) clusters adsorbed on the (110) surface of Pd via atomistic simulations performed by employing embedded atom method potentials. For both systems, one dimensional linear chains are lower in energy than two dimensional structures, although the linear chain stability is more enhanced in the case of Cu/Pd(110). Our results on cluster stability are analyzed in terms of effective interactions and adsorbate arrangement upon relaxation. In close connection with STM experiments performed recently on Cu/Pd(110) [Roeder et al., Nature 366, 141 (1993)] we evaluate the diffusion barrier for atomic movement along and across the [11¯0] direction. A cross exchange mechanism is found to lower significantly the diffusion barrier across the [11¯0] direction, consistent with the value of the diffusion anisotropy found experimentally and the phase separation observed at the uppermost layer level. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.469441
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  • 4
    Electronic Resource
    Electronic Resource
    Spatial imaging of monochromatic hard x-rays from an APS undulator by the Kohzu double-crystal monochromator : The 9th National conference on synchrotron radiation instrumentation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3348-3348 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The spatial distribution of monochromatic x-rays produced by an APS undulator was imaged on a fluorescent screen and recorded with a video camera while commissioning the Kohzu double-crystal monochromator (DCM). Two sets of images were recorded: Case 1 in which the spectral output of the undulator is fixed (constant magnetic gap) and the monochromator is scanned in energy, and Case 2 in which the monochromator energy is held fixed and the spectral output of the undulator is varied by changing the magnetic gap of the insertion device. Because of the performance of the Kohzu monochromator, the mechanical conditions required to maintain the twice-diffracted beam could be preserved as the DCM was scanned in energy, allowing the evolution as a function of energy. The images are compared with the calculated spatial distributions of monochromatic undulator radiation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147263
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of laser irradiation on the luminescence of Mg and Si-doped GaN films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 1120-1123 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulsed laser treatments have been performed in GaN samples of both n- and p-type conductivity. The laser induced changes have been monitored by emissive mode and cathodoluminescence (CL) in a scanning electron microscope. Emissive mode observations indicate a moderate laser induced recrystallization. The luminescent emission has been characterized in both types of samples, GaN:Si and GaN:Mg. Whereas the evolution of CL in the Si doped samples could be explained by the occurrence of laser induced annealing, the luminescent behavior of the Mg doped samples upon irradiation seems to be more complex and a strong relation with the compensation or Mg activation is suggested. Several luminescence bands with maxima ranging from 3.3 to 2.7 eV and their dependence on irradiation conditions have been studied.© 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369254
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  • 6
    Electronic Resource
    Electronic Resource
    Further tests on liquid-nitrogen-cooled, thin silicon-crystal monochromators using a focused wiggler synchrotron beam : The 9th National conference on synchrotron radiation instrumentation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3350-3350 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A newly designed, cryogenically cooled, thin Si crystal monochromator was tested at the European Synchrotron Radiation Facility (ESRF) beamline BL3. It exhibited less than 1 arcsec of thermal strain up to a maximum incident power of 186 W and average power density of 521 W/mm2. Data were collected for the thin (0.7 mm) portion of the crystal and for the thick ((approximately-greater-than)25 mm) part. Rocking curves were measured as a function of incident power. With a low power beam, the Si(333) rocking curve at 30 keV for the thin and thick sections was 〈1 arcsec FWHM at room temperature. The rocking curve of the thin section increased to 2.0 arcsec when cooled to 78 K, while the thick part was unaffected by the reduction in temperature. The rocking curve of the thin section broadened to 2.5 arcsec FWHM and that of the thick section broadened to 1.7 arcsec at the highest incident power. The proven range of performance for this monochromator has been extended to the power density, but not the absorbed power, expected for the Advanced Photon Source (APS) undulator A in closed-gap operation (first harmonic at 3.27 keV) at a storage-ring current of 300 mA. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147264
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  • 7
    Electronic Resource
    Electronic Resource
    Luminescence from growth topographic features in GaN:Si films (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 462-465 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cathodoluminescence (CL) in the scanning electron microscope is used to investigate the nature of defects responsible for the luminescence associated with round and hexagonal-like topographic features of GaN:Si films. Round hillocks of the size of a few microns, which sometimes have a nanopipe related central hole, do not influence the luminescence emission of the film. Hillocks with sizes of several tens of microns show a marked CL contrast at the center and at the border. The origin of the observed contrast is attributed to a growth induced inhomogeneous distribution of point defects and impurities. Radiation with the electron beam of the scanning microscope causes a decrease of the CL intensity without spectral changes. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366661
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  • 8
    Electronic Resource
    Electronic Resource
    Study of defects in GaN films by cross-sectional cathodoluminescence (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2796-2799 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cathodoluminescence (CL) in the scanning electron microscope has been used to study cross-sectional samples on GaN epitaxial films grown on sapphire. Increased CL emission, attributed to the presence of stacking faults and decorated dislocations, is observed in a region of the buffer layer close to the film–substrate interface. In the epilayers also a region of enhanced emission is observed which is partially caused by Si doping and in which structural defects are involved. Cross-sectional CL appears as a useful method to reveal features of the spatial distribution of luminescence, not detectable by plan-view measurements. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366634
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  • 9
    Electronic Resource
    Electronic Resource
    Comparison of electrical and luminescence data for the A center in CdTe (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3510-3512 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the electrical and optical properties of the deep levels responsible for the 1.4–1.5 eV luminescence band usually observed in II–VI compounds. We compared the energy levels found by cathodoluminescence and junction spectroscopy methods for semi-insulating (CdTe:Cl and Cd0.8Zn0.2Te) and semiconducting samples (undoped CdTe). The techniques utilized were deep level transient spectroscopy (DLTS) on semiconducting samples and photoinduced current transient spectroscopy and photo-DLTS on high resistivity materials. These last two techniques are complementary and allow the determination of the trap character (donor/acceptor). Three acceptor levels are seen in the electrical transient data at Ev+0.12, 0.14, and 0.16 eV with hole capture cross sections of 2×10−16, 1×10−16, and 4×10−17 cm2, respectively. The lowest level is seen only in Cl doped material corroborating the literature optical and electron spin resonance identification of a level at Ev+0.12 eV as being a VCd+ClTe donor–acceptor pair center. All three levels may be present in the 1.4 eV luminescence band. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117228
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  • 10
    Electronic Resource
    Electronic Resource
    Cathodoluminescence study of laser recrystallized CdTe layers (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3096-3098 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdTe(100)/GaAs(100) and CdTe(111)/CdTe(111) layers grown by metalorganic vapor phase epitaxy (MOVPE) were investigated. The layers were recrystallized to improve their morphology by scanning the surface with a 100 μm diameter spot from an Ar ion laser beam (λ=514.4 nm). Cathodoluminescence spectra from both as-grown and recrystallized CdTe MOVPE layers are used to monitor the effect of the recrystallization procedure. The laser recrystallization results in important changes on the spectral distribution of luminescence. Deep-level bands associated to different defects are shown to be very sensitive to the laser recrystallization procedure. The effect of the different substrates on the defect structure of the layers is also related to the changes observed in the cathodoluminescence spectra. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120257
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