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  • 1995-1999  (20)
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  • 1
    Electronic Resource
    Electronic Resource
    Intra- and interwell transitions in GaInN/GaN multiple quantum wells with built-in piezoelectric fields (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 82-84 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied optical transitions in GaInN/GaN single and multiple quantum wells using time-resolved photoluminescence spectroscopy. Our results show that the energy positions of the dominant emission lines strongly depend both on the well width and on the number of wells. In the case of multiple quantum wells, time-resolved measurements clearly distinguish multiple emission lines. These observations are consistently explained by considering the large built-in piezoelectric field in strained GaInN quantum wells. The multiple emission lines are attributed to intra- and interwell transitions between nearest and next-nearest neighbors. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122958
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  • 2
    Electronic Resource
    Electronic Resource
    Hole transport over heterobarriers in InP based multiple quantum well structures (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1323-1325 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a systematic analysis of the hole transport over heterobarriers in the InGaAs(P)/InP material system. The experiments have been performed on our recently developed all-optical switching structures [C. Knorr et al., Appl. Phys. Lett. 69, 4212 (1996)], which offer an elegant access to hole transport rates. We have varied barrier thickness, barrier height, bias voltage, and temperature. The time constants vary from 30 μs to 30 ns. Our model calculations, including all heavy and light hole subbands, show that only thermally assisted tunneling can explain both the temperature and electric field dependence of the transport rates. We have extracted the activation energies. The hole capture time is determined as 250±50 fs. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120982
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  • 3
    Electronic Resource
    Electronic Resource
    Single variant ordering in GaInAs/InP (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2127-2129 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spontaneously ordered Ga0.47In0.53As grown on substrates with the (001) surface tilted 4° towards {111}B are studied using spectroscopic methods as well as x-ray diffraction, transmission electron diffraction and dark-field transmission electron microscopy. The single variant ordering is proved by the absence of one class of the ordering induced 〈fraction SHAPE="CASE"〉12{111}B superlattice spots in transmission electron diffraction patterns as well as by the tilted polarization of the photoluminescence emerging from the samples cleaved edge. The temperature dependence of the luminescence peak position shows an anomalous behavior at low temperatures and a strong dependence of the peak position on the excitation power. From low temperature absorption measurements, we find a band gap reduction of 37 meV and a valence band splitting of 13.2 meV. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119357
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  • 4
    Electronic Resource
    Electronic Resource
    A mechanism for low-power all-optical switching in multiple-quantum-well structures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4212-4214 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate a novel type of optical switching mechanism in pin separate confinement multiple quantum well (SCMQW) structures. By introducing additional large barriers into conventional InGaAs(P)/InP SCMQW structures, the transport of photogenerated holes can be controlled in such a way that they accumulate in the intrinsic region. This positive space charge leads to a local screening of the internal field in the optical confinement layer and to an enhancement of the internal field in the MQW region. We characterize the optical nonlinearity, which is based on the quantum confined Stark effect (QCSE), experimentally and theoretically. As the nonlinearity is observed at input powers 〈1 W/cm2 in the basic nonoptimized structures presented here, we propose to use our structure especially for low-power optical switches. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116989
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  • 5
    Electronic Resource
    Electronic Resource
    Influence of carrier transport/capture and gain flattening in picosecond pulse generation of InGaAs microcavity lasers (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3137-3139 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated and studied the dynamics of In0.16Ga0.84As λ-cavity lasers focusing on the influence of carrier transport/capture and gain flattening by using optical resonant pumping and off-resonant pumping. With the off-resonant pumping, shoulders in the lasing pulse shape were observed, while no shoulder appeared with the on-resonant pumping. From rate equation analysis and time-resolved photoluminescence measurement, it was concluded that the shoulders result from carrier transport/capture effects. Saturation of the inverse rise time was observed at high pump levels. This results from gain flattening due to the steplike density of states of 2D carriers. The pulse width obtained from the laser was as narrow as 7.7 ps. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116807
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  • 6
    Electronic Resource
    Electronic Resource
    Optical gain in GaInN/GaN heterostructures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3746-3748 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By optical gain spectroscopy we have studied the fundamental laser properties of GaInN/GaN heterostructures grown on sapphire. Utilizing the stripe excitation method we have measured optical gain spectra at room temperature. Due to the low symmetry of the wurtzite structure and the resulting splitting of the uppermost valence bands, we find optical gain only for the TE mode. Our analysis shows that the optical gain is due to direct band-to-band transitions in an electron-hole plasma. For gain amplitudes typically found in lasers, we find carrier densities up to 3×1019 cm−3, which are likely to lead to rather large threshold current densities. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115993
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  • 7
    Electronic Resource
    Electronic Resource
    Valence-band splitting and band-gap reduction in ordered GaInAs/InP (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 6196-6198 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the linear absorption and the nonlinear absorption due to the bleaching of the excitonic resonance have been used to determine the band-gap reduction and valence-band splitting in spontaneously ordered GaInAs/InP. Tilts of the substrate ranging from 2° to 15° towards {111}B, different growth rates and temperatures have been used to produce a series of samples containing various degrees of ordering. Best sample quality including small x-ray and photoluminescence linewidth as well as low temperature luminescence from the band edge was obtained using a substrate tilted 6° towards {111}B. The ratio between ordering induced band-gap reduction and crystal-field splitting was found to be ζ=1.8±0.4. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367493
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  • 8
    Electronic Resource
    Electronic Resource
    Evaluation of the effective hole masses in pseudomorphic compressively strained GaxIn1−xAs/InP quantum wells (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 67-69 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The valance band structure of metalorganic vapor phase epitaxy (MOVPE) grown strained GaxIn1−xAs/InP single quantum well structures is experimentally verified by the determination of the effective in-plane hole masses. The masses are obtained by performing magnetotransport experiments. Mobilities up to 8700 cm2/V s for gallium content of x=0.3 were reached. The effective heavy hole masses of compressively strained GaInAs are drastically reduced compared to bulk material in excellent agreement to calculations using the k⋅p-perturbation theory, whereas the masses of the uppermost valence band of tensile strained material appear to be rather high. Consequently, no experimental determination was possible in the latter case. A precise analysis of the Shubnikov–de Haas oscillation patterns of compressively strained quantum wells shows a spin splitting of the uppermost heavy hole band, containing two different effective masses. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115509
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  • 9
    Electronic Resource
    Electronic Resource
    Optical gain in ordered GaInP/AlGaInP quantum wells (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3340-3342 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we present optical gain calculations for strained and ordered GaInP/AlGaInP quantum-wells which are based on a 6-band kp theory. The calculations were performed with a set of parameters that show an excellent agreement with gain measurements on unstrained and disordered samples. We show that ordering and strain together have a great influence on the polarization of the gain and the gain versus carrier density characteristics, and may be used to further improve properties of lasers in this material system. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113750
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  • 10
    Electronic Resource
    Electronic Resource
    Intrinsic modulation bandwidth of strained GaInP/AlGaInP quantum well lasers (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 650-652 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the intrinsic modulation response of GaxIn1-xP/AlGaInP quantum well lasers. The differential gain resulting from the measurement of the frequency response, is in good agreement with calculations based on a 6-band kp-theory and direct measurements of the optical gain. We find a maximum value of 3.8×10−16 cm2 for a strongly compressively strained sample, which is less than in InGaAs lasers according to the larger effective masses. The maximum bandwidth we observed is 9.3 GHz at −3 dB. We show that the bandwidth is limited by catastrophic optical damage and not by intrinsic mechanisms. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119818
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