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  • 1
    Electronic Resource
    Electronic Resource
    Nonlinear optical absorption in separate confinement multi-quantum-well structures due to spatial band bending (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1184-1186 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on nonlinear optical absorption in InGaAs/InGaAsP separate confinement multiple-quantum-well (SCMQW) structures based on charge-carrier induced band bending. Carrier induced localization and related changes in absorption strength due to spatial separation of electrons and holes are utilized to design SCMQW structures with a new type of optical nonlinearity. Experimentally, we observe strong changes in optical absorption with increasing excitation power. Compared to exciton bleaching, the new nonlinearity dominates at low carrier densities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358464
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  • 2
    Electronic Resource
    Electronic Resource
    Indirect-band-gap transition in strained GaInAs/InP quantum-well structures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5067-5071 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using photoluminescence (PL) and time-resolved measurements, the valence-band structure of tensile strained GaInAs quantum wells has been evaluated. From temperature-dependent PL, LO-phonon-assisted transitions at energies of about 32 meV below the band gap transition were observed. In addition, a hundredfold increase in the carrier lifetime of tensile strained quantum wells compared to unstrained layers was measured. Both findings are strong indications that the maximum of the valence band in k space is shifted away from the center of the Brillouin zone in tensile strained quantum wells near a critical composition, where the lowest heavy-hole and light-hole levels cross each other, thus giving rise for indirect optical transitions as predicted by theory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355749
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  • 3
    Electronic Resource
    Electronic Resource
    Identification of a nonradiative recombination center in GaAs (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4449-4451 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the identification of the CuGa acceptor level as a recombination center in GaAs. Using time-resolved photoluminescence (PL) we have studied the recombination of excess charge carriers in metalorganic vapor-phase epitaxy GaAs/AlGaAs double heterostructures. The recombination in one particular set of samples was clearly nonradiative and the trap level derived from our measurements coincides with that of CuGa as seen in the PL spectra. The temperature dependence of the capture coefficients is consistent with a multiphonon process and allows for the determination of the coupling strength for electron and hole capture.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352184
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  • 4
    Electronic Resource
    Electronic Resource
    Linewidth enhancement factor and carrier-induced differential index in InGaAs separate confinement multi-quantum-well lasers (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2467-2469 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quantum-well lasers can achieve a low spectral linewidth because of their high differential gain, leading to a lower linewidth enhancement factor α than for bulk lasers. The differential refractive index and the gain of InGaAs separate confinement multi-quantum-well lasers with two different quaternary barrier layers, have been determined from the spontaneous emission spectra below threshold. The measured value of the α factor is about 2.8 up to 3.5 at the gain maximum for both laser structures. The refractive index and the gain spectra are connected via the Kramers–Kronig relation. Therefore, the differential refractive index and the α factor have been deduced from calculated gain spectra with an additional contribution of the intraband transitions of the free carriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349402
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  • 5
    Electronic Resource
    Electronic Resource
    Auger recombination in bulk and quantum well InGaAs (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 913-915 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the determination of Auger recombination coefficients in bulk and quantum well InGaAs by time-resolved luminescence measurements. In bulk InGaAs the coefficient is C=3.2×10−28 cm6/s and has the temperature dependence of the valence-band Auger effect involving the split-off valence band. In 11 nm quantum well InGaAs we find C=0.9×10−28 cm6/s, independent of temperature. The Auger coefficient decreases slightly with decreasing well width.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103175
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  • 6
    Electronic Resource
    Electronic Resource
    Acceptor diffusion across InGaAs/InP heterointerfaces (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 931-933 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results on Zn and Cd diffusion across InGaAs/InP and InP/InGaAs heterointerfaces are reported. Drastic changes in the group III sublattice were obtained near the interface when Zn diffused from an InGaAs top layer across the heterojunction. Diffusion from an InP top layer, as well as Cd diffusion, or simple annealing of the samples had no measurable influence on the stability of the interfaces. The strong interdiffusion of In and Ga host atoms as well as the Zn gettering at the interface is discussed in terms of two diffusion mechanisms, namely, the "kick-out'' mechanism and the vacancy mechanism. The activation energy for the Zn-stimulated Ga interdiffusion across the InGaAs/InP heterojunction was estimated to be EA =3.8±0.3 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102629
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  • 7
    Electronic Resource
    Electronic Resource
    Excitation and decay mechanisms of the intra-4f luminescence of Yb3+ in epitaxial InP:Yb layers (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 114-116 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The decay and excitation processes of internal transitions of Yb3+(4f13) incorporated in InP were investigated by means of time-resolved photoluminescence and photoluminescence excitation spectroscopy. From the temperature dependence of the excited state lifetime we find several decay mechanisms, including a bound-exciton-like Auger process, energy transfer, and thermal depopulation. Excitation spectroscopy reveals that free carriers are needed during the excitation process of Yb centers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99067
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  • 8
    Electronic Resource
    Electronic Resource
    Valence-band splitting and band-gap reduction in ordered GaInAs/InP (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 6196-6198 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the linear absorption and the nonlinear absorption due to the bleaching of the excitonic resonance have been used to determine the band-gap reduction and valence-band splitting in spontaneously ordered GaInAs/InP. Tilts of the substrate ranging from 2° to 15° towards {111}B, different growth rates and temperatures have been used to produce a series of samples containing various degrees of ordering. Best sample quality including small x-ray and photoluminescence linewidth as well as low temperature luminescence from the band edge was obtained using a substrate tilted 6° towards {111}B. The ratio between ordering induced band-gap reduction and crystal-field splitting was found to be ζ=1.8±0.4. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367493
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  • 9
    Electronic Resource
    Electronic Resource
    Investigations on the performance of multiquantum barriers in short wavelength (630 nm) AlGaInP laser diodes (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2158-2160 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Al0.5In0.5P/Ga0.5In0.5P superlattice structures have been investigated as multiquantum barriers (MQB) in 630 nm band laser diodes in order to reduce thermal current losses. By inserting an optimized MQB, we have succeeded in improving both threshold currents and characteristic temperatures of such devices. However, the optimized dimensions of the MQB found experimentally deviated strongly from those predicted theoretically, indicating that the commonly used theoretical description assuming effective mass approximation, electron wave interference, and using transfer matrix calculation is not adequate. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123786
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  • 10
    Electronic Resource
    Electronic Resource
    Injection lasers with vertically aligned InP/GaInP quantum dots: Dependence of the threshold current on temperature and dot size (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3730-3732 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on threefold-stacked vertically aligned InP/GaInP quantum dot injection lasers emitting in the visible part of the spectrum (690–705 nm) with a low threshold current density of jth=172 A/cm2 at 90 K showing a thermally activated increase towards higher temperatures. We derived an activation energy for this behavior, which is found to be just one half of the energetic distance between the dot transition energy and the wetting layer band gap. Thus, we identify thermal evaporation of carriers out of the dots and into the wetting layer states as the process responsible for the increase in the threshold current. The nonradiative carrier lifetime in the wetting layer (τnrWL) is estimated to be approximately 250–400 ps. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122877
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