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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3616-3623 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure of ZnSe/ZnTe multiple quantum well-based pseudo-ohmic contacts to p-ZnSe was investigated using transmission electron microscopy and high-resolution transmission electron microscopy. In the case of samples consisting of five ZnSe/ZnTe multiple quantum wells, both pure edge Lomer dislocations and 60° dislocations were identified at the interface between the ZnSe/ZnTe multiple quantum wells and the ZnTe overlayer, along with partial dislocations bounding stacking faults. The dominant dislocations at the interface are Lomer dislocations. In the case of samples grown under group II-rich conditions, the interface exhibits corrugations. At the top and bottom of the corrugations, the Lomer dislocations are dominant and in the slope of the corrugations, 60° dislocations are dominant. In the case of samples grown using migration-enhanced epitaxy, V-shaped defects consisting of three dislocations associated with two stacking faults are formed. The total Burgers vector of the V-shaped defects is a〈100〉. The increasing total thickness and the number of ZnSe/ZnTe multiple quantum wells leads tend to make the dominant defects dissociated 60° dislocations. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 1196-1200 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using ion-channeling methods, the thermal stability of crystallinity for heavily Ga-doped ZnSe epitaxial layers grown on GaAs (100) substrates was investigated. Some distinctive features were found: The crystallinity of as-grown heavily Ga-doped ZnSe is similar to that of undoped ZnSe. After thermal annealing at 450 °C, the crystallinity of Ga-doped ZnSe is degraded, although that of undoped ZnSe is not significantly changed. It is expected that doped Ga atoms are displaced from the regular lattice sites after annealing. The degree of this degradation depends on the crystallinity of the as-grown Ga-doped ZnSe itself. These results indicate the degradation of the crystallinity for Ga-doped ZnSe epilayers is mainly caused by the interaction between the doped Ga atoms and grown-in point defects in the epitaxial layers. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1824-1826 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The defect structure of optically degraded ZnCdSe quantum wells was investigated using transmission electron microscopy. The defects were composed of the dislocation dipoles with a Burgers vector of b=−(a/2)[101] inclined at 45° to the (001) plane. The dislocation dipoles consist of two segments aligned along the [11¯0] direction and the [120] direction. The [11¯0] dipole segments lying in the (111¯) plane were developed by the recombination-enhanced dislocation glide process, while the [1¯2¯0] dipole segments lying in the (2¯11) plane were developed by the recombination-enhanced dislocation climb process. Both processes operate simultaneously. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3893-3895 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the gain characteristics of gain-guided quantum well II–VI laser diodes by measuring the amplified spontaneous emission spectra under several pulsed conditions. The temperature rise during one current pulse affects the gain characteristics and the L-I characteristics. The net modal gain at constant peak current increases with the pulse width. The peak gain for long pulses shows a superlinear dependence on injection current. In this case, the L-I curve is very steep above threshold and sometimes shows an internal quantum efficiency of more than unity. This leads to an underestimation of the internal cavity loss giving a value inconsistent with the one obtained from the gain spectra. With short pulse currents (〈200 ns), the peak gain shows a weak sublinear dependence on injection current. The cavity losses obtained from the gain spectra and the L-I characteristics at short pulses are consistent. As a result, we obtain the intrinsic gain characteristics of gain-guided quantum well II–VI laser diodes. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of periodontal research 30 (1995), S. 0 
    ISSN: 1600-0765
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: The co-aggregation characteristics between Fusobacterium nucleatum and streptococci were examined to clarify the adherence factors participating in the co-aggregation. Nineteen strains of F. nucleatum were classified into 8 groups according to co-aggregation titer and inhibition by L-arginine, L-lysine and N-acetyl-D-galactosamine (or lactose). The inhibition activity was, however, very different from strain to strain. With two fusobacterial strains, two inhibitors, which were both inhibition negative on their own, completely inhibited the co-aggregation when used together in a mixture. In some co-aggregation pairs, the protease treatment of F. nucleatum inactivated one of the adherence factors, and resulted in the change of inhibition characteristics. These results indicate the multimodal co-aggregation of F. nucleatum with streptococci mediated by L-arginine-sensitive, L-lysine-sensitive, N-acetyl-D-galactosamine-sensitive and some resistant factors, and that the adherence factor or factors participating in the co-aggregation change according to the co-aggregation partners.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1432-1750
    Keywords: Key words: Sarcoidosis—Tumor necrosis factor receptor—Lymphocyte—Bronchoalveolar lavage
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract. Since tumor necrosis factor (TNF) is known to be involved in granuloma formation in sarcoidosis, and soluble TNF receptors (sTNF-Rs) inhibit TNF action in vivo, we evaluated the levels of sTNF-Rs in the bronchoalveolar lavage fluids (BALF) of 31 subjects using an enzyme-linked immunosorbent assay. Our group consisted of 13 patients with sarcoidosis (7 sarcoidosis patients who received no treatment and 6 who received corticosteroid therapy) and 18 control subjects (11 healthy nonsmokers and 7 asymptomatic smokers). Type II (75-kDa), but not type I (55 kDa) sTNF-R in BALF was elevated significantly in patients with sarcoidosis compared with the healthy nonsmokers (type I: 126.7 ± 17.6 pg/ml BALF vs 79.4 ± 16.5 pg/ml BALF, p 〉 0.05; type II: 98.3 ± 27.8 pg/ml BALF vs 26.7 ± 4.9 pg/ml BALF, p 〈 0.05). Although levels of type I sTNF-R in BALF from sarcoidosis patients were not correlated with any cellular profiles of BALF, concentrations of type II correlated significantly with the numbers of lymphocytes in BALF. We concluded that sTNF-R is a normal constituent of the epithelial lining fluids and that levels of type II sTNF-R are elevated significantly in the BALF from individuals with sarcoidosis. This suggests that sTNF-Rs may influence the local bioactivity of TNF and may also contribute to the pathogenesis of sarcoidosis.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1617-4623
    Keywords: Streptomyces setonii ISP5395 ; Cryptic gene ; Carotenogenesis ; Sigma factor
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract In many species of actinomycetes, carotenogenesis can be photoinduced. The capacity to respond to photoinduction is, however unstable and, in various strains of Streptomyces, is lost at a relatively high frequency. In Streptomyces setonii ISP5395, which normally produces no carotenoids, carotenoid-producing mutants can be obtained following protoplast regeneration. We report here the characterization of a gene, crtS, which was isolated from one such mutant and can confer on wild-type S. setonii ISP5395 cells the capacity to synthesize carotenoids. Sequence analysis of crtS reveals an open reading frame, which shows homology to genes that encode alternative sigma factors in Bacillus subtilis. We propose that crtS encodes a sigma factor which is necessary for the expression of a cryptic gene(s) for carotenoid biosynthesis in S. setonii ISP5395.
    Type of Medium: Electronic Resource
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