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  • 1995-1999  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    Optical properties of boron carbide (B5C) thin films fabricated by plasma-enhanced chemical-vapor deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8643-8647 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Variable angle of incidence spectroscopic ellipsometry was used to determine the optical constants near the band edge of boron carbide (B5C) thin films deposited on glass and n-type Si(111) via plasma-enhanced chemical-vapor deposition. The index of refraction n, the extinction coefficient k, and the absorption coefficient are reported in the photon energy spectrum between 1.24 and 4 eV. Ellipsometry analysis of B5C films on silicon indicates a graded material, while the optical constants of B5C on glass are homogeneous. Line shape analyses of absorption data for the films on glass indicate an indirect transition at approximately 0.75 eV and a direct transition at about 1.5 eV. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362487
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Fabrication of boron-carbide/boron heterojunction devices (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1495-1497 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have succeeded in the fabrication of a boron–carbide/boron diode on an aluminum substrate, and a boron–carbide/boron junction field effect transistor. Our results suggest that with respect to the approximately 2 eV band gap pure boron material, 0.9 eV band gap boron–carbide (B5C) acts as a p-type material. Both boron and boron–carbide (B5C) thin films were fabricated from single source borane cage molecules using plasma enhanced chemical vapor deposition (PECVD). Epitaxial growth does not appear to be a requirement. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116266
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Measurement of the permeability of thin films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 2072-2073 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A system has been developed to directly measure the flow of inert gases through an arbitrary thin film. The system employs a porous aluminum silicate ceramic as the substrate for film deposition, a flow control apparatus to hold the substrate under vacuum and allow a helium gas pressure differential to be established across the substrate, and a helium leak detector to measure the flow of helium through the substrate/film combination. This allows calculation of the permeability of the film. The permeability of plasma enhanced chemical vapor deposited diamondlike carbon films and sputter deposited silicon nitride, and nickel films were measured. A thermally grown silicon dioxide film was also tested. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149714
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    Paper (German National Licenses)
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