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  • 1
    Electronic Resource
    Electronic Resource
    Ultraviolet and electron radiation induced fragmentation of adsorbed ferrocene (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8730-8734 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: From thermal desorption spectroscopy we find that ferrocene, Fe(C5H5)2, adsorbs and desorbs associatively on Ag(100). Photoemission results indicate that the initially adsorbed surface species closely resembles that of molecular ferrocene. The shift in photoemission binding energies relative to the gas phase is largely independent of the molecular orbital. We find that ultraviolet light does lead to partial fragmentation of the ferrocene and that the molecular fragments are much more strongly bound to the surface than the associatively adsorbed ferrocene. Since fragmentation occurs only in the presence of incident radiation, selective area deposition from this class of molecules is possible. Using a focused electron beam in a scanning transmission electron microscope, we show that selective area deposition of features with resolution of a few hundred angstroms is readily achieved. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362474
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Fabricating magnetic Co-Ni-C thin-film alloys by organometallic chemical vapor deposition : The 5th Joint MMM−Intermag Conference (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6062-6064 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have deposited CoxNiy-C films with a variety of compositions to verify dependence of the saturation magnetization on the composition. These experiments suggest that we can produce CoxNiy-C films with a variety of magnetic properties. The CoxNiy-C films were fabricated by ultraviolet decomposition of cobaltocene and nickelocene. We demonstrated that the photolytic decomposition of these metallocenes produces cyclopentadienyl (C5H5) species, consistent with recent studies of the energetics of the ligand metal bonds.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350046
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  • 3
    Electronic Resource
    Electronic Resource
    Effects of reactive ion beam treatment of a sapphire surface to optimite the deposition of GaN films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7940-7945 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We examined the possibility of employing the surface treatment of sapphire using reactive ion beam (RIB) pretreatment as an alternative process for GaN growth in metalorganic chemical vapor deposition (MOCVD). As a result of the RIB treatment, etching of the sapphire surface and the formation of a very thin, disordered AlON layer was observed which was partially crystallized during the main growth of GaN. Reduction in both dislocation density and lattice strain of GaN on RIB treated sapphire was obtained. Partial crystallization in the RIB layer promoted two-dimensional growth on the crystallized regions and relieved the misfit strain through relaxation of the disordered RIB layer. The optical properties of the GaN films could be optimized by the proper choice of the ion beam energy. The present results clearly show that RIB pretreatment of the sapphire surface can be used to improve the properties of GaN films grown by MOCVD. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373478
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  • 4
    Electronic Resource
    Electronic Resource
    Fabrication of boron-carbide/boron heterojunction devices (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1495-1497 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have succeeded in the fabrication of a boron–carbide/boron diode on an aluminum substrate, and a boron–carbide/boron junction field effect transistor. Our results suggest that with respect to the approximately 2 eV band gap pure boron material, 0.9 eV band gap boron–carbide (B5C) acts as a p-type material. Both boron and boron–carbide (B5C) thin films were fabricated from single source borane cage molecules using plasma enhanced chemical vapor deposition (PECVD). Epitaxial growth does not appear to be a requirement. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116266
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  • 5
    Electronic Resource
    Electronic Resource
    Heterojunction fabrication by selective area chemical vapor deposition induced by synchrotron radiation (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1968-1970 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated a B5C, boron-carbide/Si(111) heterojunction diode by the synchrotron radiation-induced decomposition of orthocarborane. This diode can be compared with similar boron-carbide/Si(111) heterojunction diodes fabricated by plasma enhanced chemical vapor deposition. The synchrotron radiation induced chemical vapor deposition is postulated to occur via the decomposition of weakly chemisorbed species and the results suggest that "real-time'' projection lithography (selective area deposition) of boron-carbide devices is possible.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111758
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