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  • 1
    Electronic Resource
    Electronic Resource
    Oxford BSL : Blackwell Science
    Child 23 (1997), S. 0 
    ISSN: 1365-2214
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine , Psychology
    Notes: This article describes the use of a newly-developed measure of parents’ perceptions of health care providers’ behaviours (Measure of Processes of Care — MPOC) to evaluate the family centredness of children’s rehabilitation services. The measure was developed with the participation of more than 1600 parents of children with chronic neurodevelopmental conditions throughout Ontario. It assesses five domains: enabling and partnership; providing general information; providing specific information about the child; coordinated and comprehensive care; and respectful and supportive care. By comparing the perceptions of parents receiving services from three different types of organizations or programmes, we demonstrated that the MPOC can pick up differences between parents in their experiences of caregiving. We also demonstrated that the MPOC is able to detect differences in how parents view the family-centredness of services provided by individual centres. The data indicate that the MPOC has appreciable utility in providing programmes and services with a description of their current level of family-centred service as perceived by parents. The strengths, limitations and potential uses of the measure in other contexts are discussed.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2296-2301 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution of the microstructure during the crystallization of amorphous Fe80B20 alloys has been investigated by small-angle neutron scattering (SANS) and transmission electron microscopy (TEM). Samples with an increasing degree of crystallization were obtained by performing different isothermal heat treatments on melt spun amorphous ribbons. The TEM measurements indicate that the crystallization occurs by nucleation and growth of Fe3B spherulites which include small finely divided α-Fe acicular crystallites. On the basis of the TEM results a model for the quantitative analysis of the SANS data has been formulated. The results show that, due to the high growth velocity of the nucleated particles, only their number increases with increasing annealing time, while their size and internal structure is not dependent on the degree of crystallization. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2086-2090 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X ray and ultraviolet photoelectron spectroscopies have been used to determine the heterojunction valence band discontinuity at the (0001) GaN/AlN interface. Type I discontinuity values of 0.5±0.2 eV were determined for GaN grown on AlN at 650 °C and 0.8±0.2 eV for GaN grown on AlN at 800 °C. These values are critically evaluated with respect to film quality, the results of other experimental studies, and theory. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6042-6048 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution (±1°) x-ray photoelectron diffraction (XPD) patterns were obtained along high symmetry azimuths of the (3×3) and ((square root of)3×(square root of)3)R30° reconstructed (0001)Si 6H–SiC surfaces. The data were compared to XPD patterns obtained from (7×7) Si (111) as well as to models proposed for the (3×3) and ((square root of)3×(square root of)3)R30° 6H–SiC reconstructions. Forward scattering features similar to those observed from the (7×7) Si (111) were also observed from the ((square root of)3×(square root of)3)R30° 6H–SiC (0001)Si surface. Additional structures were found and attributed to the substitution of carbon atoms for silicon. Unlike (1×1) and (7×7) Si (111) surfaces, the XPD patterns of (3×3) and ((square root of)3×(square root of)3)R30° SiC (0001)Si surfaces are different which is due to the presence of an incomplete bilayer of Si on the (3×3) surface. The most significant difference with the Si system is the equivalence of the [101¯0] and [011¯0] azimuths in the (3×3) structure. These results are consistent with a faulted Si bilayer stacking sequence which was proposed based on scanning tunneling microscopy observations. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4483-4490 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed examination of the valence band discontinuity (ΔEv) formed at the (0001), (0001¯), and (11¯00) interfaces between 2H–AlN and 6H–SiC has been conducted using x-ray and UV photoelectron spectroscopies. The ΔEv was observed to range from 0.6–2.0 eV depending on the growth direction (i.e., AlN on SiC vs SiC on AlN), as well as the crystallographic orientation, cut of the SiC substrate (i.e., on versus off axis), and SiC surface reconstruction and stoichiometry. A ΔEv of 1.4–1.5 eV was observed for AlN grown on (3×3) (0001)Si6H–SiC on-axis substrates; a ΔEv of 0.9–1.0 eV was observed for off-axis substrates with the same surface reconstruction. The values of ΔEv for AlN grown on ((square root of)3×(square root of)3)R30°(0001) 6H–SiC on-and-off-axis substrates were 1.1–1.2 eV. A larger valence band discontinuity of 1.9–2.0 eV was determined for 3C–SiC grown on (0001) 2H–AlN. Smaller values of ΔEv of 0.6–0.7 and 0.8–0.9 eV were observed for AlN grown on on-axis (0001¯)C and (11¯00)6H–SiC substrates, respectively. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5584-5593 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanisms of growth of GaN on AlN and AlN on GaN via gas source-molecular beam epitaxy with NH3 as the nitrogen source have been investigated using x-ray photoelectron spectroscopy, low energy electron diffraction, and Auger electron spectroscopy. The growth of GaN on AlN at low temperatures (650–750 °C) occurs via a Stranski–Krastanov 2D→3D type mechanism with the transition to 3D growth occurring at (approximate)10–15 Å. The mechanism changes to Frank van der Merwe (FM)/layer-by-layer growth above 800 °C. The growth of AlN on GaN occurred via a FM layer-by-layer mechanism within the 750–900 °C temperature range investigated. We propose a model based on the interaction of ammonia and atomic hydrogen with the GaN/AlN surfaces which indicates that the surface kinetics of hydrogen desorption and ammonia decomposition are the factors that determine the GaN growth mechanism. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of organic chemistry 60 (1995), S. 3940-3941 
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Child 21 (1995), S. 0 
    ISSN: 1365-2214
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine , Psychology
    Notes: Parents of children with chronic iiinesses are at significantly increased risk to experience mental health problems. Because such families are in frequent contact with the health care system, it is possible that aspects of the organization and content of health services might contribute to the development or prevention of these emotional burdens. The purpose of the present study was to examine the patterns of parental values about a variety of aspects of care and services, assessing both the absolute and relative importance of 22 defined components of care (COCs). Respondents were 80/111 parents (72%) of children with diabetes mellitus and 45/56 parents (80%) of children with cystic fibrosis, followed at a regional university-affiliated children's hospital. They completed a two-part mailed questionnaire, rating independently each COC, and then ranking all 22 COCs using a modified Q-sort technique. While the majority of COCs were judged as 'somewhat’or‘very’important by over 75% of respondents, there was also significant agreement between the two groups on their rankings of the COCs (Spearman rank coefficient r= 0.92, P〈 0.001). The COCs ranked most highly by both groups were diagnosis, treatment, education/information, continuity/ consistency, accessible and available care, evaluation of chronic illness, and parental involvement. Furthermore, the concordance between this combined medical illness group and a previously-studied neurodevelopmental group was r = 0.72 (P 〈 0.001). These results are discussed in relation to the
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Plant breeding 114 (1995), S. 0 
    ISSN: 1439-0523
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: One population of pearl millet (Pennisetum glaucum (L.) R. Br.) highly susceptible to downy mildew (Sclerospora graminicola (Sacc.) Schroet.) was subjected to two cycles of recurrent selection for downy mildew resistance using a modified greenhouse screening method. The response to selection was evaluated under greenhouse and field conditions using 50 random S1 progenies and 50 random full-sib progenies from each cycle bulk. Significant progress over cycles of selection was observed in all evaluation trials. These results demonstrated that, in a susceptible population, recurrent selection effectively increased the level of resistance to downy mildew. The modified greenhouse method for assessing resistance to downy mildew effectively differentiated genotypes and had the advantages of greater rapidity and suitability for use throughout the year, independent of season.A rapid decline of genotypic variance was observed in advanced cycles of selection, indicating that a small number of genes controls downy-mildew resistance in this population. The comparison of genotypic and error variance components from S1 progenies and full-sib progenies suggested that full-sib progenies can be used successfully in recurrent selection for increased downy-mildew resistance.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5248-5260 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Successful ex situ and in situ cleaning procedures for AlN and GaN surfaces have been investigated and achieved. Exposure to HF and HCl solutions produced the lowest coverages of oxygen on AlN and GaN surfaces, respectively. However, significant amounts of residual F and Cl were detected. These halogens tie up dangling bonds at the nitride surfaces hindering reoxidation. The desorption of F required temperatures 〉850 °C. Remote H plasma exposure was effective for removing halogens and hydrocarbons from the surfaces of both nitrides at 450 °C, but was not efficient for oxide removal. Annealing GaN in NH3 at 700–800 °C produced atomically clean as well as stoichiometric GaN surfaces. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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