ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
This article describes novel techniques to directly measure the electron mobility and mean free drift time product μeτe in semiconductor detectors. These methods are based on newly developed single polarity charge sensing and depth sensing techniques. Compared with conventional methods based on the Hecht relation, the new methods do not involve curve fitting, are less sensitive to the variation of pulse rise times, and allow the use of higher energy γ rays typical of many applications. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.368601
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