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1

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Empirical dielectric function of amorphous materials for spectroscopic ellipsometry (1995)

Yamaguchi, T. ; Kaneko, Y. ; Jayatissa, A. H. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 77 (1995), S. 4673-4676

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: An empirical dielectric function (EDF) is proposed for optical characterization of amorphous materials. The EDF consists of the sum of damped harmonic oscillator terms whose square root amplitudes are distributed according to a hyperbolic function of photon energy connected to an exponential function. The usefulness of EDF is demonstrated by fitting it to the table values of dielectric constants for a-Si and a-Si3N4 and by applying it to the spectro-ellipsometric analysis of a-Si films deposited by vacuum evaporation and rf glow discharge methods. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.359604

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Electrical properties of buried B/Si surface phases (1998)

Zotov, A. V. ; Lifshits, V. G.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 83 (1998), S. 5865-5869

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Conductivity and Hall-effect measurements have been carried out at 24 K for a set of various layered structures with buried B/Si surface phases used as delta-doped layers. Evidence is found for hole mobility enhancement as a consequence of boron dopant ordering. The electrical measurements reveal a basic difference in room temperature adsorption for boron on Si(100) and Si(111) surfaces. The characterization of the samples containing buried B/Si(111) interfaces and extra-thin Ge layers suggests promise for improving the structure and electrical properties of the buried surface phases. The hole mobility in epi-Si/Ge/B/Si(111) structures is found to be about 2.5 times higher than in epi-Si/B/Si(111) samples. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.367447

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Electrical properties of surface phases on silicon capped by amorphous Si layers (1995)

Zotov, A. V. ; Wittmann, F. ; Lechner, J. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 67 (1995), S. 611-613

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: A set of the different Si:Al and Si:B surface phases capped by amorphous Si layers were grown by molecular beam epitaxy (MBE). The formation of the buried interfaces was studied by low-energy electron diffraction and Auger electron spectroscopy. The conductivity and Hall effect measurements of the grown samples revealed that only the buried Si(111)(square root of)3×(square root of)3−B surface phase manifests itself as a highly doped degenerated layer, while all the buried Si:Al surface phases covered by amorphous Si show negligible activation of dopants. The difference in electrical properties of the buried surface phases are discussed in terms of the characteristics of their atomic structure. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.115405

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