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  • 1995-1999  (7)
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  • 1
    Electronic Resource
    Electronic Resource
    Nature of the interlayer coupling in annealed Ni80Fe20/Ag multilayers : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4762-4765 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using x-ray and polarized neutron (PNR) reflectivity, we have measured the structural and magnetic depth profiles of annealed Ni80Fe20 (20 A(ring))/Ag (40 A(ring)) multilayers. The x-ray data indicate that the interfaces are highly mixed. PNR measurements of the 335 °C annealed multilayer in small magnetic fields reveal a broad feature in the off-specular spin-flip scattering that is not present for the unannealed sample. The giant magnetoresistance is thus associated with antiferromagnetic correlations between micrometer-sized magnetic domains within the Ni80Fe20 layers. This spin ordering is consistent with a model in which weak dipolar forces lead to an antiparallel alignment of the domains across the Ag layers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361664
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Grain growth and ordering kinetics in CoPt thin films : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5330-5332 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Grain growth and ordering kinetics have been studied in a 10-nm-thick CoPt alloy film of equiatomic composition annealed in the temperature range 550–700 °C by quantifying the grain size, grain size distribution, ordered fraction and ordered domain size. The mean grain size of the as-deposited films is 5 nm and the film is fully face-centered cubic. Upon annealing in the temperature range 550–600 °C, the mean grain size reaches a stagnation limit of 27 nm and the grain size distribution is lognormal. Grain growth resumes beyond 600 °C and the mean grain size reaches as high as 55 nm at 700 °C. Ordering occurs by nucleation and growth of L10 ordered domains, with a mean size of 3 nm at 550 °C and 19 nm at 700 °C. The ordered fraction shows a dramatic increase from 1% to ∼28% between the two extremes of annealing temperature. The increase in the coercivity of the annealed films follows the increase in the ordered fraction more closely than the increase in grain size. The shape of the M–H loop shows evidence of coupling between the magnetically hard (ordered) and soft (disordered) regions. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361368
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Magnetostatically induced giant magnetoresistance in patterned NiFe/Ag multilayer thin films (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1154-1156 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin film multilayer structures consisting of two permalloy layers separated by Ag spacers show little or no giant magnetoresistance in their as-deposited state, due to a predominantly ferromagnetic interlayer exchange coupling that does not oscillate in sign with variations in the Ag spacer thickness. Upon patterning these films into arrays of dots and other geometries with micron scale features, however, antiferromagnetic coupling and giant magnetoresistance are observed due to magnetostatic interactions between layers that are induced at the edges of the patterns. In this letter we present our experimental results and discuss their relevance as magnetoresistive sensors for magnetic recording heads and other applications. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114992
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  • 4
    Electronic Resource
    Electronic Resource
    The wavelength-dependent transfer function for optically controlled semiconductor lasers (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5056-5060 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optically controlled laser, consisting of a main semiconductor laser with an associated control beam, is important for integrated high-speed optical signal processing and for optical communications. The optically controlled laser rate equations, the gain, and the wavelength-dependent transfer function are derived from the Liouville equation for the density matrix describing a system with multiple perturbing optical fields. The results explain the primary effects of coherent and noncoherent control signals upon the output of the main laser (illustrated with experimental data). Predictions are obtained for optical gain, wavelength conversion, and FM-to-AM demodulation. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367322
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  • 5
    Electronic Resource
    Electronic Resource
    Gain controlled vertical cavity surface emitting lasers coupled with intracavity in-plane lasers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1717-1719 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of optical control of the stimulated emission of a vertical cavity surface emitting laser (VCSEL) by an intra-cavity coupled in-plane laser. Depending on the overlap between the two gain regions, greater than 70% change in threshold current to complete quenching of the VCSEL, is observed. The combined device offers a wide variety of potential applications for integrated, all-optical logic devices and optical interconnects between signal planes. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113344
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  • 6
    Electronic Resource
    Electronic Resource
    A model for optically quenched lasers (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 146-148 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model is presented for optically controlling the gain of a semiconductor laser by introducing photons from a second coherent source into the side of the laser. We find that the threshold current of the laser increases in direct proportion to the overlap between the two modes and the photon density from the coherent source. An easy-to-use, closed-form expression relates the optical power emitted from the laser to the bias and threshold currents. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118342
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Etched-surface roughness measurements from an in situ laser reflectometer (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1459-1461 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An in situ laser reflectometer is used to determine the surface roughness of III–V laser heterostructure as it etches in an electron cyclotron resonance etcher. A stochastic model links the reflectometer signals with the fluctuations of the surface height and slope, and with the size of the illuminated surface area. This technique is valuable for improving the quality of optical waveguides etched in III–V heterostructure, and the electrical contacts for optoelectronic devices. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116907
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