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  • 1
    Electronic Resource
    Electronic Resource
    Growth and photoluminescence of high quality SiGeC random alloys on silicon substrates (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3043-3047 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report chemical vapor deposition growth of SiGeC layers on 〈100〉 Si substrates. At the growth temperature of 550 °C, the C concentration as high as 2% can be incorporated into SiGe (Ge content ∼ 25%) to form single crystalline random alloys by using low flow of methylsilane (0.25 sccm) as a C precursor added in a dichlorosilane and germane mixture. For intermediate methylsilane flow (0.5 sccm – 1.5 sccm), the Fourier transform infrared spectroscopy (FTIR) absorption spectra indicate the growth of amorphous layers. For the layers with high flow of methylsilane (12 sccm), there are silicon-carbide-like peaks in the FTIR spectra, indicating silicon carbide precipitation. The films were also characterized by x-ray diffraction, high resolution transmission electron microscopy, secondary ion mass spectroscopy, and Rutherford backscattering spectroscopy to confirm crystallinity and constituent fractions. The defect-free band-edge photoluminescence at both 30 K and 77 K was observed in Si/SiGeC/Si quantum wells, even at power densities as low as 0.5 W/ cm2 and 1 W/cm2, respectively. Deep photoluminescence around 0.8 eV and luminescence due to D3 dislocations at 0.94 eV were not observed under any excitation conditions. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363163
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  • 2
    Electronic Resource
    Electronic Resource
    Suppression of boron penetration by polycrystalline Si1−x−yGexCy in metal–oxide–semiconductor structures (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2501-2503 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A polycrystalline Si1−x−yGexCy layer grown by rapid thermal chemical vapor deposition has been used as a thin intermediate layer on top of the thin gate oxide in a metal–oxide–semiconductor structure with boron-doped polycrystalline silicon as the gate electrode. Although boron readily penetrated through the Si1−x−yGexCy and accumulated in it, boron penetration across the gate oxide into the substrate was greatly suppressed compared to that in structures without Si1−x−yGexCy layer. Our work suggests that the addition of carbon reduced the chemical potential of boron in polycrystalline Si1−x−yGexCy, compared to that in polycrystalline silicon or polycrystalline Si1−xGex. We have also observed no gate depletion effects with the use of poly-Si1−x−yGexCy layers in both p+ and n+ gate doping. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123020
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  • 3
    Electronic Resource
    Electronic Resource
    High electron mobility polycrystalline silicon thin-film transistors on steel foil substrates (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2244-2246 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin-film transistors have been fabricated in polycrystalline silicon films on steel foil. The polycrystalline silicon films were formed by the crystallization of hydrogenated amorphous silicon, which had been deposited on 200-μm-thick foils of stainless steel coated with ∼0.5-μm-thick layers of SiO2. We employed crystallization temperatures (and duration) of 600 °C (6 h), 650 °C (1 h), and 700 °C (10 min). Top-gate transistors made from films crystallized at 650 °C have an average electron field-effect mobility of 64 cm2/V s, with equal values in the linear and saturated regimes. Thus steel substrates permit a substantial reduction in crystallization time over glass substrates, and afford polysilicon with high electron mobility. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124978
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  • 4
    Electronic Resource
    Electronic Resource
    Three-color organic light-emitting diodes patterned by masked dye diffusion (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1913-1915 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method of masked dye diffusion to locally pattern the emissive color of organic light-emitting devices (OLEDs) over a large area is introduced. By using a large-area diffusion source, which may be a spin-coated doped polymer film, the entire process of masked diffusion of dye into a polymer film of an OLED to create an integrated three-color device has been demonstrated at atmospheric pressure. The materials used to demonstrate this method are the polymer poly(9-vinylcarbazole) combined with electron transport molecules, and the dyes bimane, coumarin 6, and Nile red. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123711
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  • 5
    Electronic Resource
    Electronic Resource
    Ink-jet printing of doped polymers for organic light emitting devices (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 519-521 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ink-jet printing was used to directly deposit patterned luminescent doped-polymer films. The luminescence of polyvinylcarbazol (PVK) films, with dyes of coumarin 6 (C6), coumarin 47 (C47), and nile red was similar to that of films of the same composition deposited by spin coating. Light emitting diodes with low turn-on voltages were also fabricated in PVK doped with C6 deposited by ink-jet printing. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120807
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  • 6
    Electronic Resource
    Electronic Resource
    The effect of carbon on the valence band offset of compressively strained Si1−x−yGexCy/(100) Si heterojunctions (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1557-1559 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Capacitance–voltage measurements have been used to study the effect of carbon on the valence band offset of compressively strained Si1−x−yGexCy/(100) Si heterojunctions grown by rapid thermal chemical vapor deposition with substitutional C levels from 0% to 2.5%. The valence band offset between Si1−x−yGexCy and unstrained (100) Si decreases at a rate of 20–26 meV per % C. Our work indicates that the change in the bandgap of Si1−x−yGexCy as carbon is added is entirely accommmodated in the valence band. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118615
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  • 7
    Electronic Resource
    Electronic Resource
    Integrated three-color organic light-emitting devices (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3117-3119 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a demonstration of the integration of individual polymer-based light emitting devices of three different colors on the same substrate. Orange, green, and blue color devices are sequentially fabricated on the same indium–tin oxide (ITO) coated glass substrate coated with a patterned insulator on the ITO, by the spin coating of polymer thin films, the vacuum deposition of top metal contacts, and the patterning of polymer thin film by plasma etching, using the top metal contacts as the self-aligned etching mask. The devices exhibit no degradation of device characteristics due to the integration processing compared to discrete devices on separate substrates. This demonstration shows a new path towards the fabrication of high performance low-cost full-color organic flat panel displays. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116800
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  • 8
    Electronic Resource
    Electronic Resource
    Poly(p-phenylene vinylene)/tris(8-hydroxy) quinoline aluminum heterostructure light emitting diode (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 653-655 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results are presented from polymer/molecular organic heterostructure light emitting diodes composed of a layer of the conjugated conducting polymer poly(p-phenylene vinylene) (PPV), and a layer of fluorescent molecular compound tris(8-hydroxy) quinoline aluminum (Alq). The external quantum efficiency of these heterostructure LEDs is ∼0.1%, which is over one order of magnitude higher than that of simple PPV LEDs. The electroluminescence (EL) spectra indicate that both materials in the device emit comparable amounts of light. The dependence of the EL spectra on the layer thicknesses and its independence on bias suggest that neutral excitons are formed in the Alq, far from the PPV/Alq interface, and subsequently diffuse into the PPV layer. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114119
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  • 9
    Electronic Resource
    Electronic Resource
    Tunable, long-wavelength PtSi/SiGe/Si Schottky diode infrared detectors (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 506-508 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated p-type PtSi/SiGe/Si Schottky diodes with barrier heights (from photoresponse) that are lowered (relative to PtSi/Si) and highly dependent on the applied bias. The variability in the barrier height is obtained by using the SiGe/Si valence band offset as an additional barrier. When placed in close proximity to the PtSi/SiGe Schottky barrier, the total effective barrier can be altered dramatically by adjusting the applied reverse bias. The voltage sensitivity of the total barrier height can be controlled by the SiGe layer thickness. The voltage-variable barrier heights range, for example, from 0.30 eV at zero bias to 0.12 eV at 2.4 V reverse bias for a 20%, 450 A(ring) thick SiGe layer. This lowest barrier height corresponds to a cutoff wavelength of 10 μm, extending the detection range of PtSi infrared detectors to the long-wavelength range. The quantum efficiency coefficients C1 are normal at this long-wavelength end, but reduced over the rest of the tunable range, because hot carriers have to traverse the entire SiGe thickness in order to be detected. The hot carriers' energy losses from quasielastic scattering in the SiGe are taken into account in a theoretical model that gives good agreement with data. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114551
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  • 10
    Electronic Resource
    Electronic Resource
    Direct optical measurement of the valence band offset of p+ Si1−x−yGexCy/p− Si(100) by heterojunction internal photoemission (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3568-3570 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical absorption measurements have been performed to study the effect of substitutional carbon on the valence band offset of compressively strained p+ Si1−x−yGexCy/(100) p− Si. The compressively strained p+ Si1−x−yGexCy/(100) p− Si heterojunction internal photoemission structures were grown by rapid thermal chemical vapor deposition with substitutional carbon levels up to 2.5%. Carbon decreased the valence band offset by 26±1 meV/% substitutional carbon. Based on previous reports of the effect of carbon on the band gap of Si1−x−yGexCy, our work suggests that the effect of carbon incorporation on the band alignment of compressively strained Si1−x−yGexCy/Si is to reduce the valence band offset, with a negligible effect on the conduction band alignment. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122809
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