ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A novel class of low molecular-weight organic resist materials for nanometer lithography, 1,3,5-tris[4-(4-toluenesulfonyloxy)phenyl]benzene (TsOTPB) and 4,4′,4″-tris(allylsuccinimido) triphenylamine (ASITPA), was designed and synthesized. TsOTPB with a glass-transition temperature (Tg) of 64 °C and ASITPA with a Tg of 80 °C were found to function as positive and negative resists, respectively, enabling the fabrication of 150 and 70 nm line patterns on exposure to an electron beam at 50 keV. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.117714
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