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  • 1
    Electronic Resource
    Electronic Resource
    Surface damage in a Mn-Zn ferrite induced by laser chemical etching (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 158-162 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface damage induced by laser etching of a Mn-Zn ferrite has been investigated by Rutherford backscattering spectrometry and proton-induced x-ray emission measurements. It is found that laser-induced etching of the Mn-Zn ferrite in both CCl4 gas and H3PO4 could cause surface damage that is much less than that induced by mechanical polishing. The laser-induced surface damage is distributed in a thin surface layer with a thickness of 50 nm. It is also found that the surface damage is caused by thermally activated lattice dislocation and impurity doping due to the laser irradiation instead of the chemical reactions between etchant chemicals and the ferrite surface. There are two different sources of damage: one is the interstitial atoms from the ferrite substrates; another is from interstitial impurity atoms resulting from the etching process. The study also indicates that the surface damage could reduce the magnetization of the substrate surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353877
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  • 2
    Electronic Resource
    Electronic Resource
    Nanoscale deposition from a metal-covered scanning tunneling microscope tip (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3348-3350 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A fabrication method using a metal-covered scanning tunneling microscope tip has been developed to provide a nanoscale deposition method with various metal species. Nanoscale deposition has been carried out on highly oriented pyrolytic graphite with a core tungsten tip, a gold-covered tungsten tip, and an aluminum-covered tungsten tip, by applying tip positive voltage pulses. The threshold voltage, above which deposition occurred, showed a linear dependence on the tip-sample separation and differed for tip material. This suggests that the fabrication mechanism is field-induced and the deposition takes place by the transfer of tip material to the sample. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361238
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  • 3
    Electronic Resource
    Electronic Resource
    Modification of magnetic property in Mn-Zn ferrite by MeV ion implantation (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 983-985 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic property of Mn-Zn ferrite has been modified by Si+ and Au+ implantation at 3 MeV to doses of 1×1016 and 1×1017 cm−2, respectively. The magnetization of the implanted surface layer decreased to zero when the ion implantation induced vacancy number was high enough. The decrease in magnetization is found to be related to the vacancy number in the implanted layer. The surface magnetization of the implanted layer can be completely recovered by thermal annealing at 850 °C for 30 min.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104463
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  • 4
    Electronic Resource
    Electronic Resource
    Novel class of low molecular-weight organic resists for nanometer lithography (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2605-2607 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel class of low molecular-weight organic resist materials for nanometer lithography, 1,3,5-tris[4-(4-toluenesulfonyloxy)phenyl]benzene (TsOTPB) and 4,4′,4″-tris(allylsuccinimido) triphenylamine (ASITPA), was designed and synthesized. TsOTPB with a glass-transition temperature (Tg) of 64 °C and ASITPA with a Tg of 80 °C were found to function as positive and negative resists, respectively, enabling the fabrication of 150 and 70 nm line patterns on exposure to an electron beam at 50 keV. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117714
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  • 5
    Electronic Resource
    Electronic Resource
    Surface structure of (NH4)2Sx-treated GaAs (100) in an atomic resolution (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2578-2580 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The three-dimensional structure of a GaAs (100) surface, treated in a (NH4)2Sx solution and annealed at 200 °C, was studied in an atomic scale by x-ray photoemission spectroscopy (XPS), high-resolution Rutherford backscattering spectroscopy (RBS), and scanning tunneling microscopy (STM). XPS spectra showed that S termination could suppress oxidization of the surface in the air and that S atoms on a GaAs surface bonded As atoms. The disorder of atomic sites in the surface region of a S-terminated GaAs was found by RBS channeling spectra to be smaller than that of an untreated sample. The thickness of the sulfur layer on GaAs was found to be about 1.5 monolayers from RBS measurement. STM observation of the S-terminated surface revealed a 1×1 lateral structure of the sulfur layer on the GaAs (100) surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111531
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  • 6
    Electronic Resource
    Electronic Resource
    Laser-induced trench etching of GaAs in aqueous KOH solution (1990)
    Springer
    Applied physics 51 (1990), S. 340-343 
    Details
    ISSN: 1432-0630
    Keywords: 81.40 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Maskless etching of n-type GaAs in a KOH aqueous solution by irradiation of an argonion laser has been investigated to obtain high etching rates and aspect-ratios of etched grooves. High etching rates of up to 805 μm/s and an aspect ratio of 8 have been achieved by a single scan of a laser beam. Microprobe photoluminescence (PL), Raman scattering, and Auger electron spectroscopy (AES) measurements were carried out on the trench surface to characterize damage induced by laser wet etching.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324316
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