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  • 1
    Electronic Resource
    Electronic Resource
    Optimized compact secondary electron collector with 100% collection efficiency for focused ion beam systems (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 91-94 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This article describes the optimization procedure to design a compact scintillator which has a maximum secondary electron collection efficiency without the need of a bias voltage for a focused ion beam (FIB) system. The optimized scintillator design was proven to be very effective for focused ion beam systems. By doing design optimization theoretically and experimentally, a 100% collection was realized for a simple, compact and robust scintillator structure without the bias voltage. So far our experimental study is within the scope of FIB imaging, but we have reasons to believe that the optimized designs or the optimization methodology discussed in this article should be useful in other charged particle applications such as scanning electron microscopy or wherever a scintillator is used to collect secondary electrons. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148483
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  • 2
    Electronic Resource
    Electronic Resource
    Probing nanodefects in fused silica by near-field scanning optical microscopy (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3016-3019 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanodefects were artificially introduced into a fused silica surface by nanoindenting with a commercial atomic force microscope. The sample was illuminated in a total internal reflection configuration and evanescent waves were detected by a near-field scanning optical probe in the constant tip-sample separation mode. The observed contrast in optical images was attributed to the strain fields associated with the nanoindents. Thus the optical image directly maps out the strain distributions associated with these nanoindents. Optical images were taken at different polarizations of the incident light (s and p). Due to different field distributions near the sample surface for the two polarizations, strain distributions at different depths were probed. The spatial resolution of this technique was limited by the probe aperture size and detector sensitivity. This technique may be a useful tool to study laser-induced damage mechanisms in optical materials at the submicron scale.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368454
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  • 3
    Electronic Resource
    Electronic Resource
    Direct measurement of refractive-index dispersion using a time-delayed technique (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 1472-1475 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe a new way to measure the refractive index of dielectric materials using a time-resolved correlation method. By measuring the time delay of femtosecond pulse trains through a dielectric material, we obtain the refractive index of the material. This technique is direct, less surface sensitive, and precise to four digits. Consequently, it gives a true bulk index value. We apply this technique to measure the refractive index of fused silica, InP, and GaAs in the near infrared spectral regime. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148794
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  • 4
    Electronic Resource
    Electronic Resource
    Brain CRMP Forms Heterotetramers Similar to Liver Dihydropyrimidinase (1997)
    Oxford, UK : Blackwell Science Ltd
    Journal of neurochemistry 69 (1997), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: The cytoplasmic collapsin response mediator protein CRMP62 is involved in the signaling cascade initiated by collapsin-1, which collapses neuronal growth cones. To investigate the mechanism of CRMP action, we screened mouse and human fetal cDNA libraries by the yeast two-hybrid method with CRMP as bait. Clones encoding CRMP1 and CRMP4 were isolated, suggesting that the CRMPs form multimers. This finding was confirmed by expressing various rat CRMP cDNAs in the yeast two-hybrid system. Rat CRMP isoforms show differential association with one another. Heterooligomerization is preferred in both two-hybrid and in vitro binding assays. Purified bovine brain CRMP migrates as a tetramer during size exclusion chromatography. Examination of binding with truncated forms of CRMPs indicates that the avid association of CRMPs requires nearly intact proteins. Through the analysis of CRMP chimeras, CRMP amino acids 8–134 and 281–435 are found to be essential for CRMP oligomerization. The tetrameric structure of CRMP resembles that of liver dihydropyrimidinase (DHPase), a protein that shares sequence similarity with the CRMPs. Although purified brain CRMP does not hydrolyze several DHPase substrates, it is likely that a related activity accounts for CRMP participation in neuronal growth cone signaling.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1471-4159.1997.69062261.x
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  • 5
    Electronic Resource
    Electronic Resource
    Resolution limits from charge transport in optically addressed spatial light modulators (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6923-6935 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spatial resolution of optically addressed spatial light modulators (OASLMs) is degraded by several different transfer processes in these devices. We have developed a general transient charge transport model to calculate and simulate the resolution limits of OASLMs due to the following charge spreading mechanisms during the transfer process in which the input image is converted into a particular charge distribution in the photosensor layer. (i) The effect of charge drift in the photosensor bulk on resolution increases with the thickness of the photosensor and the light-modulating layers. It also increases with the total amount of photogenerated charge collected at the interface. (ii) The effect of charge diffusion in the photosensor bulk on resolution is largely independent of the carrier mobility in the semiconductor photosensor. In most cases the corresponding spatial frequency f50% is proportional to (square root of)Vsc/dsc, where dsc is the photosensor thickness and Vsc is the voltage drop in that layer. To have high-sensitivity OASLMs the transit time of charge carriers from the photosensor bulk to the interface must be much shorter than the recombination lifetime. (iii) The effects that charge drift, diffusion, and trapping at the photosensor-light-modulating layer interface have on resolution depend strongly on the interface properties. Decreasing the mobility or the trapping time of charge carriers at the interface can dramatically improve the resolution of OASLMs. The resolution ranges from 3 to 875 line pairs/mm for respective diffusion lengths of 10 to 0.1 μm at the interface. The combined effect on resolution from each of the charge spreading and other resolution-degrading mechanisms is also discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360459
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  • 6
    Electronic Resource
    Electronic Resource
    Surface damage of polymethylmethacrylate plates by ice and nylon ball impacts (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1643-1649 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study is described of the impact process and the corresponding surface damage to PMMA (polymethylmethacrylate) targets impacted by ice and nylon spheres. A gas gun system was used to project the spheres and the impacts were recorded using a high-speed image converter camera (Imacon 792). Special attention was paid to the conditions causing projectile failure and the surface damage to the target. The experimental results show that although the deformation and failure modes for ice and nylon are different, the surface damage to the PMMA target has a similar failure pattern, i.e., a central, circular undamaged region surrounded by an annular damaged region containing many short circumferential cracks. Analysis shows that the diameter d of the central undamaged region and the annular damaged area Am can be used to characterize the surface damage which depends on the projectile material, sphere radius R, as well as the impact velocity V0. For a given projectile, two critical impact velocities exist: One is the threshold velocity (V0)th, below which no visible surface damage is observed, and another is the fracture velocity (V0)f, above which a plate target is broken. Damage in the annular region is caused by the Rayleigh surface wave in the present experiments. The conditions for the Rayleigh surface wave to pass ahead of the expanding edge contact velocity are analyzed. Comparisons between the theoretical predictions and experimental results, including the present study and earlier data, are made for PMMA plates impacted by projectiles of different materials (ice, nylon spheres, and water drops) and at different impact angles. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360259
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  • 7
    Electronic Resource
    Electronic Resource
    Time-resolved carrier recombination dynamics of 1.3–1.8 μm broadband light emitting diode structures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6965-6971 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a time-resolved study of carrier recombination dynamics of broadband light emitting diode structures comprised of a series of InGaAs/InGaAlAs digital pseudoalloy short period superlattices fabricated by molecular beam epitaxy. The structure consists of three quantum wells equally spaced in emission energy over the 1.3–1.8 μm range. We performed a time-resolved study of carrier recombination process for each quantum well using optical pumping. Experimental results show that carrier tunneling across adjacent wells plays a major role in the overall carrier population distribution across the three wells. By tailoring the thicknesses of barriers and wells of the structure, uniform spectral emission covering 1.3–1.8 μm range can be achieved. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363769
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  • 8
    Electronic Resource
    Electronic Resource
    The effects of different interfacial environments on the optical nonlinearity of nanometer-sized CdO organosol (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2097-2099 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The third-order optical nonlinearity χ(3) of nanometer-sized CdO with different interfacial environments has been measured using the Z-scan technique. The real and imaginary parts of χ(3) at 800 nm have been determined to be: −1.55×10−16 m2/W and 0.91 cm/GW for CdO–CTAB (cetyltrimethyl ammonium bromide) organosol, and −6.97×10−16 m2/W and 8.64 cm/GW for CdO–DBS (dodecylbenzene sulfonate) organosol. Origins of the optical nonlinearity and the effects of the interfacial conditions have been discussed. The optical Stark effect (OSE) and surface trapped states are the possible origins of the observed optical nonlinearity. The possible enhancement of optical nonlinearity of nanoparticles by intentional interfacial modification is suggested. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120424
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  • 9
    Electronic Resource
    Electronic Resource
    Epitaxially oriented growth of diamond on silicon by hot filament chemical vapor deposition (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 176-178 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Expitaxially oriented growth of diamond film on Si(001) was achieved using hot filament chemical vapor deposition. The epitaxial relationship between the film and the substrate was confirmed by the observation through scanning electron microscopy and high-resolution transmission electron microscopy (HRTEM) as follows: Dia(001)//Si(001) and Dia〈110〉//Si〈110〉 with a misorientation angle of 9° between Dia(001) and Si(001). This reports the HRTEM observation of the largest area of the diamond/Si interface (larger than 880 A(ring)). It demonstrates that the intermediate β-SiC layer is unnecessary for achieving diamond epitaxy on Si. Discussion reveals that the value of the misorientation angle between Dia(001) and Si(001) is not unique and should be controlled to deposit single-crystal diamond films on Si. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116451
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  • 10
    Electronic Resource
    Electronic Resource
    Observation of exciton and biexciton processes in CdxZn1−xSe/ZnSe (x=0.2) (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1450-1452 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Exciton and biexciton transitions have been observed in low-temperature (10 K) photoluminescence from CdxZn1−xSe/ZnSe (x=0.2) multiple quantum well samples grown by molecular beam epitaxy. Transient photoluminescence experiments were conducted to study the dynamics of carrier decay associated with these processes. The formation of exciton and biexciton species is confirmed by examining their energy positions, intensity dependence on excitation power density, spectral line shapes, relative decay lifetimes, and polarization dependence. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114491
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