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  • 1
    Electronic Resource
    Electronic Resource
    High quality quantum wells of InGaP/GaAs grown by molecular beam epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2686-2688 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality quantum wells of GaAs confined by barriers of InGaP have been grown by gas-source molecular beam epitaxy. High-resolution lattice images obtained with transmission electron microscopy of single quantum wells reveal high quality interfaces for both the normal InGaP/GaAs and the inverted GaAs/InGaP interface. Multiple-line low-temperature photoluminescence emission is observed for the thinnest GaAs quantum well. The range of well thicknesses examined was 0.6–5.2 nm, with the smallest well producing a quantum confinement energy shift of over 410 meV, corresponding to photoluminescence emission at 640 nm (1.94 eV) from GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101035
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  • 2
    Electronic Resource
    Electronic Resource
    InGaP/GaAs superlattices grown by gas-source molecular beam epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2322-2324 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lattice-matched InGaP/GaAs superlattices have been grown by gas-source molecular beam epitaxy. High-resolution images obtained with transmission electron microscopy reveal the superlattices to be free of dislocations and to exhibit smooth interfaces of only 1–2 monolayers in width. Double crystal x-ray diffraction studies indicate that the narrow interfacial regions are locally strained as a result of the growth sequence during gas-source molecular beam epitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102050
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  • 3
    Electronic Resource
    Electronic Resource
    Growth of InP on Si substrates by molecular beam epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 140-142 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of single-crystal InP films on (100) Si substrates by molecular beam epitaxy (MBE) is described. Three different buffer layers were grown by gas-source MBE in order to reduce the density of dislocations created by the 8% InP-Si lattice mismatch. Double-crystal x-ray diffraction revealed that all buffer layers produced large-area single-crystal (100) InP films with the InP lattice tilted towards the 〈100〉 Si directions. A buffer layer of four Inx Ga1−x P/Iny Ga1−y P strained superlattices produced a specular InP film with an estimated dislocation density of 108 –109 cm−2 and a residual stress of less than 5×10−4.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101209
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  • 4
    Electronic Resource
    Electronic Resource
    p-type ion-implantation doping of Al0.75Ga0.25Sb with Be, C, Mg, and Zn (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1365-1370 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: p-type ion-implantation doping of Al0.75Ga0.25Sb is reported. The surface morphology and electrical properties of Al0.75Ga0.25Sb are shown by atomic force microscopy and Hall measurements to be degraded after rapid thermal annealing of 650 °C. Implantation of Be and Mg results in sheet hole concentrations twice that of the implanted acceptor dose of 1×1013 cm−2 following a 600 °C anneal. This is explained in terms of double acceptor or antisite defect formation. Implanted C acts as an acceptor but also demonstrates excess hole conduction attributed to implantation-induced defects. Implanted Zn requires higher annealing temperatures than Be and Mg to achieve 100% effective activation for a dose of 1×1013 cm−2 probably as a result of more implantation-induced damage created from the heavier Zn ion. Secondary ion mass spectroscopy of as-implanted and annealed Be, Mg, and C samples are presented. Diffusion of implanted Be (5×1013 cm−2, 45 keV) is shown to have an inverse dependence on temperature that is attributed to a substitutional-interstitial diffusion mechanism. Implanted Mg (1×1014 cm−2, 110 keV) shows dramatic redistribution and loss at the surface of up to 56% after a 600 °C anneal. Implanted C (2.5×1014 cm−2, 70 keV) displays no redistribution even after a 650 °C anneal. This work lays the foundation for using ion-implantation doping in high performance AlGaSb/InGaSb-based p-channel field-effect transistors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361034
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  • 5
    Electronic Resource
    Electronic Resource
    A low drive voltage electroabsorption modulator using an InGaAs/InP superlattice (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5895-5897 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectral transmission, reflection, and photocurrent absorption data obtained on gas-source molecular beam epitaxy grown InGaAs/InP multiple quantum well (MQW) and superlattice p-i-n diode structures demonstrate, for the first time in this materials system, that similar modulation to MQW structures can be achieved using superlattices, but at significantly lower operating voltages. Specifically, we have observed photocurrent absorption changes of as much as 58%, transmission changes of 8.2%, and reflection changes of 32% for applied biases of only 4 V, in nonresonant modulators operating at a wavelength ∼1.5 μm. These results encourage the possibility of employing such devices in fast, high density optical modulator arrays operating over the 1.3–1.6 μm range.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355305
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  • 6
    Electronic Resource
    Electronic Resource
    Electron traps in InGaP grown by gas source molecular beam epitaxy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1431-1433 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep-level transient spectroscopy has been used to characterize n-type In0.48Ga0.52P grown by gas-source molecular beam epitaxy. Only one electron trap was detected in both unintentionally doped and Si-doped material, with the thermal emission energy barrier varying somewhat with measurement conditions. For a bias pulse duration of 10 ms, the emission barrier energy was 0.24±0.03 eV and the capture barrier energy was 0.06±0.02 eV. The trap concentration was less than 3×1014 cm−3 and was found to be independent of Si doping for concentrations up to 4×1018 cm−3 and to oxygen contamination in the range (0.5–1.5)×1018 cm−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355330
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  • 7
    Electronic Resource
    Electronic Resource
    Quantum-well structures of InAlP/InGaP grown by gas-source molecular-beam epitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 752-756 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Both single quantum-well (SQW) and multiple quantum-well (MQW) structures have been produced using the technique of gas-source molecular-beam epitaxy to grow the two wide band-gap ternary alloys, InAlP and InGaP. SQWs as narrow as two monolayers observed by bright field Transmission Electron Microscopy were found to be laterally uniform with abrupt InAlP/InGaP interfaces. Photoluminescence of SQWs of differing thickness produced a larger quantum confinement energy shift than expected, with emission at 570 nm for an InGaP well of 3.0 nm in thickness. The number and amplitude of peaks detected in double-crystal x-ray diffraction (DCXR) measurements of the MQW samples matched, to within the limit of the dynamic range of the DCXR system, the peaks calculated in a periodic two-layer dynamical simulation of the x-ray rocking curve.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348921
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  • 8
    Electronic Resource
    Electronic Resource
    Unipolar complementary circuits using double electron layer tunneling transistors (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 314-316 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate unipolar complementary circuits consisting of a pair of resonant tunneling transistors based on the gate control of two-dimensional–two-dimensional interlayer tunneling, where a single transistor—in addition to exhibiting a well-defined negative-differential resistance—can be operated with either positive or negative transconductance. Details of the device operation are analyzed in terms of the quantum capacitance effect and bandbending in a double quantum well structure, and show good agreement with experiment. Application of resonant tunneling complementary logic is discussed by demonstrating complementary static random access memory using two devices connected in series. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123009
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  • 9
    Electronic Resource
    Electronic Resource
    Metal-sulfur-based air-stable passivation of GaAs with very low surface-state densities (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 327-329 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An air-stable electronic surface passivation for GaAs and other III–V compound semiconductors that employs sulfur and a suitable metal ion, e.g., Zn, and that is robust towards plasma dielectric deposition has been developed. Initial improvements in photoluminescence are twice that of S-only treatments and have been preserved for 〉11 months with SiOxNy dielectric encapsulation. Photoluminescence and x-ray photoelectron spectroscopies indicate that the passivation consists of two major components with one being stable for 〉2 years in air. This process improves heterojunction bipolar transistor current gain for both large and small area devices. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125734
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  • 10
    Electronic Resource
    Electronic Resource
    Wet thermal oxidation of AlAsSb lattice matched to InP for optoelectronic applications (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3129-3131 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate wet thermal oxidation of an AlAsSb layer lattice matched to an InP substrate. Oxidation in an InGaAs/AlAsSb/InGaAs structure proceeds in a lateral direction, producing an oxide layer embedded between two layers of InGaAs. Auger analysis and Raman spectroscopy indicate conversion of the AlAsSb into an aluminum oxide with an elemental antimony layer at the top oxide-InGaAs interface. Scanning electron microscope cross-sectional views of partially and fully oxidized samples are also presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115800
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