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  • 1
    Electronic Resource
    Electronic Resource
    High quality quantum wells of InGaP/GaAs grown by molecular beam epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2686-2688 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality quantum wells of GaAs confined by barriers of InGaP have been grown by gas-source molecular beam epitaxy. High-resolution lattice images obtained with transmission electron microscopy of single quantum wells reveal high quality interfaces for both the normal InGaP/GaAs and the inverted GaAs/InGaP interface. Multiple-line low-temperature photoluminescence emission is observed for the thinnest GaAs quantum well. The range of well thicknesses examined was 0.6–5.2 nm, with the smallest well producing a quantum confinement energy shift of over 410 meV, corresponding to photoluminescence emission at 640 nm (1.94 eV) from GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101035
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  • 2
    Electronic Resource
    Electronic Resource
    Wannier–Stark localization in a strained-layer InxGa1−xAs/InyGa1−yP superlattice (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7161-7163 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an observation of the Wannier–Stark effect in a strained InGaAs/InGaP superlattice grown on a GaAs substrate. A blueshift of the effective absorption edge is observed in room and low-temperature photocurrent and transmission measurements. A ∼2000 cm−1 absorption change due to the transition of the absorption edge from a broad to a sharp quantum well-like excitonic shape was obtained for as little as a 2 V change in bias voltage. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361487
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  • 3
    Electronic Resource
    Electronic Resource
    InGaP/GaAs superlattices grown by gas-source molecular beam epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2322-2324 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lattice-matched InGaP/GaAs superlattices have been grown by gas-source molecular beam epitaxy. High-resolution images obtained with transmission electron microscopy reveal the superlattices to be free of dislocations and to exhibit smooth interfaces of only 1–2 monolayers in width. Double crystal x-ray diffraction studies indicate that the narrow interfacial regions are locally strained as a result of the growth sequence during gas-source molecular beam epitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102050
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  • 4
    Electronic Resource
    Electronic Resource
    Growth of InP on Si substrates by molecular beam epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 140-142 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of single-crystal InP films on (100) Si substrates by molecular beam epitaxy (MBE) is described. Three different buffer layers were grown by gas-source MBE in order to reduce the density of dislocations created by the 8% InP-Si lattice mismatch. Double-crystal x-ray diffraction revealed that all buffer layers produced large-area single-crystal (100) InP films with the InP lattice tilted towards the 〈100〉 Si directions. A buffer layer of four Inx Ga1−x P/Iny Ga1−y P strained superlattices produced a specular InP film with an estimated dislocation density of 108 –109 cm−2 and a residual stress of less than 5×10−4.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101209
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  • 5
    Electronic Resource
    Electronic Resource
    Optical transitions in strained In1−xGaxAsyP1−y quantum wells clad by lattice-matched barriers of InGaAsP (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1689-1691 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We extend the deformation potential model developed previously for InGaAs/InP quantum wells to include strained quaternary wells, under compressive or tensile strain, and lattice-matched (or also strained) quaternary barriers. This requires interpolation of the needed quaternary materials parameters in a plane bound by the four binary parent compounds. The calculated energies of heavy and light hole transitions are compared to measured values obtained on a set of compressively strained multi-quantum-well quaternary structures grown on (100) InP with the lattice mismatch strain Δa/a as large as 0.75%. Our experimental results are in good agreement with the extended model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112887
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  • 6
    Electronic Resource
    Electronic Resource
    A low drive voltage electroabsorption modulator using an InGaAs/InP superlattice (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5895-5897 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectral transmission, reflection, and photocurrent absorption data obtained on gas-source molecular beam epitaxy grown InGaAs/InP multiple quantum well (MQW) and superlattice p-i-n diode structures demonstrate, for the first time in this materials system, that similar modulation to MQW structures can be achieved using superlattices, but at significantly lower operating voltages. Specifically, we have observed photocurrent absorption changes of as much as 58%, transmission changes of 8.2%, and reflection changes of 32% for applied biases of only 4 V, in nonresonant modulators operating at a wavelength ∼1.5 μm. These results encourage the possibility of employing such devices in fast, high density optical modulator arrays operating over the 1.3–1.6 μm range.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355305
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  • 7
    Electronic Resource
    Electronic Resource
    Electron traps in InGaP grown by gas source molecular beam epitaxy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1431-1433 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep-level transient spectroscopy has been used to characterize n-type In0.48Ga0.52P grown by gas-source molecular beam epitaxy. Only one electron trap was detected in both unintentionally doped and Si-doped material, with the thermal emission energy barrier varying somewhat with measurement conditions. For a bias pulse duration of 10 ms, the emission barrier energy was 0.24±0.03 eV and the capture barrier energy was 0.06±0.02 eV. The trap concentration was less than 3×1014 cm−3 and was found to be independent of Si doping for concentrations up to 4×1018 cm−3 and to oxygen contamination in the range (0.5–1.5)×1018 cm−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355330
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  • 8
    Electronic Resource
    Electronic Resource
    Quantum-well structures of InAlP/InGaP grown by gas-source molecular-beam epitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 752-756 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Both single quantum-well (SQW) and multiple quantum-well (MQW) structures have been produced using the technique of gas-source molecular-beam epitaxy to grow the two wide band-gap ternary alloys, InAlP and InGaP. SQWs as narrow as two monolayers observed by bright field Transmission Electron Microscopy were found to be laterally uniform with abrupt InAlP/InGaP interfaces. Photoluminescence of SQWs of differing thickness produced a larger quantum confinement energy shift than expected, with emission at 570 nm for an InGaP well of 3.0 nm in thickness. The number and amplitude of peaks detected in double-crystal x-ray diffraction (DCXR) measurements of the MQW samples matched, to within the limit of the dynamic range of the DCXR system, the peaks calculated in a periodic two-layer dynamical simulation of the x-ray rocking curve.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348921
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  • 9
    Electronic Resource
    Electronic Resource
    Temperature dependence of intrinsic recombination coefficients in 1.3 μm InAsP/InP quantum-well semiconductor lasers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2659-2661 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we report on the temperature dependence of the intrinsic recombination coefficients in long-wavelength quantum-well lasers. Unlike previous studies, we obtain the intrinsic recombination coefficients from carrier lifetime measurements with a correction for the carrier population in the barrier and separate confinement heterostructure region. Our results show that this carrier population not only affects the value of the recombination coefficients obtained but also their temperature dependence. We measure a significant increase in the intrinsic Auger coefficient with temperature indicating that the frequently reported temperature insensitivity of this coefficient is likely due to carriers spilling out of the wells at elevated temperatures and not an intrinsic property of the Auger process. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126435
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  • 10
    Electronic Resource
    Electronic Resource
    Low-resistance visible wavelength distributed Bragg reflectors using small energy band offset heterojunctions (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3758-3760 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Semiconductor alloy heterojunctions, with compositions selected to achieve small band offset energies, were used in distributed Bragg reflector (DBR) structures for the purpose of lowering the vertical series resistance. The heterojunctions were simple abrupt interfaces without composition grading. 40 period mirrors of AlGaInP/Al(Ga)As layer pairs were grown by gas-source molecular beam epitaxy. Mirror reflectance values were found to be greater than 99% at wavelengths near 650 nm. Measured specific resistance values, 2.8×10−4 Ω cm2 for a p-type DBR and 2.6×10−5 Ω cm2 for a n-type DBR, were comparable to or better than (Al)GaAs/Al(Ga)As DBRs employing various graded interface composition designs. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124171
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