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  • 1995-1999  (8)
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  • 1
    Electronic Resource
    Electronic Resource
    Au/ZnSe contacts characterized by ballistic electron emission microscopy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1532-1535 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ballistic electron emission microscopy (BEEM) has been performed on Au/ZnSe (001) diodes prepared in ultra high vacuum. An average barrier height (BH) of 1.37 eV is found for Au/n-ZnSe in close agreement with previously published values for diodes measured by conventional techniques. The BH distribution is relatively narrow, from 1.32 to 1.43 eV, consistent with cross-sectional transmission electron microscopy which indicates that the interface is abrupt, and without reaction products. These results differ from those reported for BEEM measurements on chemically etched Au/ZnSe diodes. [R. Coratger et al., Phys. Rev. B. 51, 2357 (1995)]. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360996
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Properties of silicon-tin alloys prepared by pulsed laser deposition (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3915-3919 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metastable thin-film alloys of tin and silicon have been grown on room temperature substrates by pulsed laser deposition. The composition of the targets, made by pressing pellets of a mixture of tin and silicon powders, was maintained in the deposited films. The granular films consisted of tin nano-crystallites surrounded by an amorphous matrix. Deposited films with tin concentration greater than 15% showed metallic behavior, optically as well as electrically, while films with tin contents less than 15% displayed optical bandgaps ranging from 100 to 300 meV. Charge transport in the semiconducting films can be modeled by a combination of conduction in extended states and hopping at the Fermi level. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359909
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Influence of HCl on the chemical vapor deposition and etching of Ge islands on Si(001) (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1862-1864 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: When HCl is added during the growth of Ge islands on Si(001) by chemical vapor deposition, the reduced Ge surface diffusion impedes island development. There is a shift in the relative populations of different island types even when other conditions such as temperature, coverage, and growth rate, are unchanged. The effect of HCl on the net rate of deposition is proportional to the square of the HCl partial pressure, suggesting a surface reaction with the Ge. When larger islands are etched with HCl at high enough temperature, they revert to a shape characteristic of smaller islands, confirming the reversibility of transformations from one island type to another. It has not proved possible to use etching to produce smaller and more uniform islands. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122307
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  • 4
    Electronic Resource
    Electronic Resource
    Atomic structure and phase transitions in disordered Ti1−xGaxN thin films grown by pulsed laser deposition (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 7613-7617 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report here the growth by pulsed laser deposition and characterization of metastable disordered Ti1−xGaxN alloy thin films on Al2O3(0001) substrates. X-ray diffraction and x-ray-absorption fine-structure analyses showed that the films contained a single rocksaltlike atomic structure for 0≤ x〈0.45, a single wurtzite-like structure for 0.75≤x≤1, and a mixture of both structures for 0.45≤x〈0.75. Over most of the composition range, the alloy films were predominantly amorphous with some fraction of nanocrystalline material present. Electrical conductivity measurements showed that the structural transition near x(approximate)0.5 is accompanied by a metal–insulator transition. This study provides an increased understanding of the TiN–GaN pseudobinary phase field, which has potential technological implications for metallic contacts to GaN devices. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367877
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Kinetic routes to the growth of monodisperse islands (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1906-1908 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strictly kinetic processes can lead to the formation of monodisperse colloidal particles in solution [H. Reiss, J. Chem. Phys. 19, 482 (1951)]. We demonstrate that the narrow size distribution of Ni islands grown on a Si (100) surface by chemical vapor deposition can be modeled very well by a simple kinetic theory, which indicates that monodisperse nanoparticles can be grown on surfaces by proper control of island nucleation and growth kinetics. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113317
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  • 6
    Electronic Resource
    Electronic Resource
    Positioning of self-assembled, single-crystal, germanium islands by silicon nanoimprinting (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1773-1775 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strain energy from the lattice mismatch of a heteroepitaxial system can create "self-assembled," single-crystal islands irregularly arranged on the surface. Alternatively, features of tens of nanometers can be patterned on a substrate by "nanoimprinting" using a mold and etching. When these two techniques are combined, the small patterned features can interact with the self-assembly process, causing the islands to form at the patterned features. The resulting regular array of very small islands may be useful for future devices. The positioning of single-crystal Ge islands by Si mesas formed by nanoimprinting and etching is demonstrated in this letter. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123683
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  • 7
    Electronic Resource
    Electronic Resource
    Lithographic positioning of self-assembled Ge islands on Si(001) (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1201-1203 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ge islands were deposited on Si(001) partially covered with patterned oxide. Selective Si was deposited on some wafers before Ge deposition to form raised Si(001) plateaus with well-defined sidewall facets. On narrow lines, the Ge islands locate preferentially at the edges of the raised Si(001) regions, and the preference is strongest on the narrowest patterns aligned along a 〈100〉 direction. For a 450 nm wide plateau aligned in this direction, all the islands are positioned along the edges of the pattern, with a 300 nm space near the center of the pattern free of Ge islands. The islands appear to be uniformly spaced along the pattern edges. On wider lines, several rows of islands are aligned near the edges of the pattern, with the order decreasing farther from the edge. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119625
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  • 8
    Electronic Resource
    Electronic Resource
    Dome-to-pyramid transition induced by alloying of Ge islands on Si(001) (1998)
    Springer
    Applied physics 67 (1998), S. 727-730 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 68.65.+g; 68.35.Bs; 68.35.Rh
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050845
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