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  • 1
    Electronic Resource
    Electronic Resource
    Influence of ion irradiation damage on properties of porous silicon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1320-1323 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effect of ion-irradiation on porous Si formation, microstructure, and optical properties. Porous Si was first self-implanted and then fabricated by anodization. With increasing implantation dose, the photoluminescence (PL) intensity decreased, and the PL spectra were also red shifted. Porous Si formed from crystal Si emitted light, while that from preamorphized Si did not. Porous Si luminescent patterns with a resolution of 2 μm features were formed by selective ion implantation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361028
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  • 2
    Electronic Resource
    Electronic Resource
    Raman spectroscopic studies of proton-exchanged LiNbO3 crystals (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1953-1957 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectra of LiNbO3 crystals with different proton-exchange time were examined. E(TO) and A1(TO) modes appear in the A1- and E-symmetry spectra, respectively, and their intensities show a dependence on exchange time. We attribute these results to both the internal strains resulting from order-disorder distribution of protons in the sample and the enhanced photorefractive effect. In addition, in the E-symmetry spectra the softening of A1(TO) mode at 630 cm−1 was found about 4%. The phenomenon arises from the existence of ferroelectric and paraelectric phases in the protonated sample at room temperature. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360166
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  • 3
    Electronic Resource
    Electronic Resource
    High-frequency resonance in acoustic superlattice of periodically poledLiTaO3 (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 592-594 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An electric poling method has been used to prepare microstructured LiTaO3 crystals with periodically inverted-ferroelectric domains. By using these crystals as acoustic superlattices, both an "in-line" scheme and a "cross-field" scheme for acoustic excitation have been realized. The experimental results are in good agreement with the theoretical analysis. It is expected that these results may be applied to a bulk-acoustic device operating at a frequency high above 450 MHz. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118284
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  • 4
    Electronic Resource
    Electronic Resource
    Evidence of ferroelectricity weakening in the polycrystalline PbTiO3 thin films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3728-3730 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Studies on the polycrystalline PbTiO3 thin films deposited on (001) redoped n-Si substrates by metalorganic chemical vapor deposition (MOCVD) under reduced pressure indicated the evidence of ferroelectricity weakening [Appl. Phys. Lett. 65, 1906 (1994)] when the grain size of PbTiO3 was down to the scale of ∼1100 A(ring). X-ray diffraction patterns demonstrated that the perovskite unit cells have a contraction along the c-axis direction. All transverse optical phonon modes in the films were observed shift downward in the Raman spectrum measured at 300 K. And the spontaneous polarization of PbTiO3 is determined to be 52 μC/cm2 by using Si substrates as the bottom electrodes. The three related experimental observations are conjected to be attributable to the finite size effect and the surface conditions in the ferroelectric thin film. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115987
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  • 5
    Electronic Resource
    Electronic Resource
    PbTiO3 thin films prepared by metalorganic chemical vapor deposition on LaAlO3 (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 148-150 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality PbTiO3 thin films have been grown on LaAlO3 substrates by metalorganic chemical vapor deposition, using purified metalorganic precursors titanium-iso-propoxide and tetra-ethyl-lead. The results of the cross-section scanning electron microscopy and x-ray diffraction (XRD), including theta and phi scan, show that the films are epitaxy, and a domains and c domains may align alternately in the thin films. The experiments of high-temperature XRD reveal the nature of the phase transition of grown PbTiO3 thin films from tetragonal to cubic phase. The transition temperature is around 460 °C which is far lower than that of bulk PbTiO3 and the thin films deposited on fused quartz substrates. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113545
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  • 6
    Electronic Resource
    Electronic Resource
    Photoluminescence spectra of C60 molecules embedded in porous Si (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3471-3473 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence (PL) spectra of C60 molecules embedded in porous Si through both physical deposition and chemical coupling were measured. In addition to the PL peak of porous Si, a peak at 730 nm caused by perfect C60 molecules and other peaks at 620 and 630 nm caused by imperfect C60 molecules were observed. The peak at 620 nm measured in the sample with physically deposited C60 is induced by C60 adsorbed on the Si atoms of the pore wall, while the peak at 630 nm measured in the sample with chemically coupled C60 molecules is caused by the coupled C60 molecules. At room temperature, the PL intensity of C60 embedded in the porous Si is obviously enhanced, and the transfer of carriers from porous Si grains into adjacent C60 is considered to be responsible for the PL enhancement. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115250
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  • 7
    Electronic Resource
    Electronic Resource
    Single-crystalline, single-domain epitaxy of PbTiO3 thin films by metalorganic chemical vapor deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3503-3505 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystalline and single-domain PbTiO3 films with thickness of 3000 A(ring) have been prepared by metalorganic chemical vapor deposition (MOCVD), using metalorganic precursors of tetra-ethyl-lead and iso-propoxide titanium. The nature of single-crystalline epitaxy and single domain of as-grown films was characterized by x-ray diffraction (XRD), synchrotron radiation (SR), and Rutherford backscattering (RBS). Using atomic force microscopy (AFM), the evidence of layer-by-layer growth was observed. The growth steps on the surface may be attributable to the formation of single-crystalline and single-domain PbTiO3 film with 3000-A(ring) thickness. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115261
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  • 8
    Electronic Resource
    Electronic Resource
    Visible electroluminescence from nanocrystallites of silicon films prepared by plasma enhanced chemical vapor deposition (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 596-598 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed visible electroluminescence (EL) from silicon nanocrystallites which are embedded in a-Si:H films prepared in a plasma enhanced chemical vapor deposition system. The EL spectra are in the range of 500–850 nm with two peaks located at about 630–680 and 730 nm, respectively. We found that the intensity of EL peaks is related closely to the conductivity of the deposited films. The carrier conduction path is discussed in terms of the material structural characteristics, and a tentative explanation of the light emission mechanism is proposed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117918
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  • 9
    Electronic Resource
    Electronic Resource
    Raman scattering of porous structure formed on C+-implanted silicon (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2091-2093 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectra of the porous structure with intense blue emission formed on C+-implanted silicon were examined using a 488 nm line of Ar+ laser. A Raman peak with full width at half-maximum of 37 cm−1 was obtained at about 492 cm−1. No Raman signals related to the β-SiC were detected. The experimental result indicates that the porous structure mainly consists of Si nanometer crystallites. The existence of β-SiC precipitates with nanometer sizes may be beneficial to the reduction of crystallite sizes and strengthen the Si skeleton, which will lead to an increase in the energy band gap of Si to the blue light emission. Using a model of phonon confinement, the obtained Raman spectra could be fitted on the basis of Si quantum crystallites and the average crystallite size was estimated to be 1.4 nm. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115594
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  • 10
    Electronic Resource
    Electronic Resource
    Phase transition of C60 crystal in high temperature regime (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 476-477 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The internal friction of the polycrystalline C60 films was measured in the temperature range of 320–620 K. Around 426 K, a λ-shaped internal friction peak was detected. The peak was interpreted in terms of another phase transition above the order-disorder phase transition temperature. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121905
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