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  • 1
    Electronic Resource
    Electronic Resource
    Simulation of Data Management in Group Purchasing System (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Advanced materials research Vol. 33-37 (Mar. 2008), p. 1445-1450 
    Details
    ISSN: 1662-8985
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: By Data Grid to handle data sharing problems of distributed position in Group Purchasing.And so, evaluating and mining massive amounts of data is without fail required replication isimportant techniques to provide fast data access. Several replication modeling algorithms are studiedin the paper. OptorSim provides a modular framework under different Grid environment. OptorSimis used to achieve the Grid simulator to research the stability and transient action. Moderngroup-companies are often made of many subsidiary companies. Stocking centralization caneconomize much fund for its large-scale purchasing action. Subordinate companies hope to choosethe best provider according to reliable data in most possible area. Advanced data in variety units ismassive amounts of data that must be post-processed and organized to support provider evaluationactions. Increasing data volumes from all of the companies challenge to state-of-the-art databasesystem and data-loading techniques. Grid concept is adopted to solve the problem in the projectwhich is named Price Comparison System (PCS). One of the key technologies in the system is toimprove the data access
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/40/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.33-37.1445.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Numerical Simulation of Void Growth Induced Creep Rupture in HAZ at Elevated Temperature (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Advanced materials research Vol. 33-37 (Mar. 2008), p. 441-448 
    Details
    ISSN: 1662-8985
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: In structural welded joints after long-term service under elevated temperature, fractureoccurred mainly in the heat affected zone (HAZ). Recently, the nucleation and growth of creep voidsin the fine-grained HAZ of weldments, recognized as Type IV fracture, has become an importantproblem for ferritic heat resisting steel. In this paper, a new computational model was presented toanalyse the void growth induced creep damage development in HAZ. The new constitutive modelbased on continuum damage mechanics (CDM) equations is combined with amicromechanism-based model in order to account for the void growth process, which is differentfrom the previous studies of creep damage. Material properties used for the creep damagecomputations are fitted from actual creep test data. Basic benchmark tests were performed to verifythe new computational model. Then the model was used to study the creep damage development inthe welded joints where four different material properties, base material, coarse-grained HAZ,fine-grained HAZ, and weld material, are taken into account. The numerical simulation results forcreep lifetimes agreed well with the experimental results
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/40/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.33-37.441.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Chemical Modification of Enzyme Molecules to Improve Their Characteristics (1990)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 613 (1990), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1990.tb18201.x
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  • 4
    Electronic Resource
    Electronic Resource
    Kinetics of the NH2 + NO Reaction: Effects of Temperature on the Total Rate Constant and the OH/H2O Branching Ratio (1994)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 98 (1994), S. 4034-4042 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100066a022
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  • 5
    Electronic Resource
    Electronic Resource
    Ionization of Pyrido[3,4-b]pyrrolizidine and Pyrrolo[1,2-a]indole Triflate Derivatives. A Novel Approach to the Mitosene Skeleton (1995)
    s.l. : American Chemical Society
    The @journal of organic chemistry 60 (1995), S. 5382-5383 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo00122a009
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  • 6
    Electronic Resource
    Electronic Resource
    Characterization of metalorganic decomposition-derived SrBi2Ta2O9 thin films with different thicknesses (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1795-1800 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric capacitors having sputtered Pt bottom and top electrodes and metalorganic decomposition derived ferroelectric thin films of SrBi2Ta2O9 (SBT) were prepared. The thickness effects on the structure, surface morphology, and electrical properties of SBT thin films were studied and discussed. Structure and surface morphology were analyzed by x-ray diffraction and atomic force microscope. The electrical properties were characterized by the measurements of hysteresis, capacitance, and pulse switching. The crystalline structure, grain size, and electrical properties do not depend on film thickness when films are less than 440 nm thick. A larger grain size is observed for films thicker than 440 nm, which results in a larger remnant polarization. The thickness dependence of the coercive voltage and reciprocal capacitance can be explained by an interfacial layer model. The thickness-independent coercive field and dielectric constant, calculated from the interfacial layer model, are around 19 kV/cm and 343, respectively. Nonvolatile polarization (Pnv), obtained from pulse-switching measurements, increases with the applied electric field and finally saturates with a slight thickness effect. The relaxation of the remnant polarization that occurs at zero-voltage intervals between the pulses and the thickness-independent behavior of Pnv are explained based on depolarization fields within the ferroelectric due to nonswitching interfacial layers at the film/electrode interfaces. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372094
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  • 7
    Electronic Resource
    Electronic Resource
    Impact of forming gas annealing on the fatigue characteristics of ferroelectric SrBi2Ta2O9 thin films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2237-2239 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The metalorganic decomposition-derived SrBi2Ta2O9 (SBT) ferroelectric thin films were annealed in forming gas (5%H2+95%N2), and their fatigue characteristics were investigated. Although the hysteresis loops of these films had an unacceptable degradation under such a H2-containing reducing atmosphere, no obvious polarization fatigue with electric field cycling could be observed. However, an increase of P*r was observed over the initial period of the fatigue test. It could be viewed as a competition between the increase of P*r due to the leakage current and the decrease of P*r due to switching polarization. H2 played an important role in the increasing in the leakage current of SBT thin films, forming more weak pinning centers of domain walls, and degradation in the fatigue characteristics. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1406979
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  • 8
    Electronic Resource
    Electronic Resource
    Single-crystalline, single-domain epitaxy of PbTiO3 thin films by metalorganic chemical vapor deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3503-3505 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystalline and single-domain PbTiO3 films with thickness of 3000 A(ring) have been prepared by metalorganic chemical vapor deposition (MOCVD), using metalorganic precursors of tetra-ethyl-lead and iso-propoxide titanium. The nature of single-crystalline epitaxy and single domain of as-grown films was characterized by x-ray diffraction (XRD), synchrotron radiation (SR), and Rutherford backscattering (RBS). Using atomic force microscopy (AFM), the evidence of layer-by-layer growth was observed. The growth steps on the surface may be attributable to the formation of single-crystalline and single-domain PbTiO3 film with 3000-A(ring) thickness. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115261
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  • 9
    Electronic Resource
    Electronic Resource
    Epitaxial Pb(Zr0.53Ti0.47)O3/LaNiO3 heterostructures on single crystal substrates (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2092-2094 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial near-stoichiometric ferroelectric Pb(Zr0.53Ti0.47)O3 thin films were fabricated on epitaxial metallic LaNiO3 electrodes deposited on (001) SrTiO3 and (001) LaAlO3 single crystal substrates by pulsed laser ablation. The P–E hysteresis loop of PZT in the trilayer of Ag/PZT/LNO/STO was measured using the Sawyer–Tower circuit. The remnant polarization Pr and coercive field Ec at room temperature were 30 μC/cm2 and 69.3 kV/cm (peak-to-peak voltage=30 V, 50 Hz), respectively. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116890
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  • 10
    Electronic Resource
    Electronic Resource
    PbTiO3 thin films prepared by metalorganic chemical vapor deposition on LaAlO3 (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 148-150 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality PbTiO3 thin films have been grown on LaAlO3 substrates by metalorganic chemical vapor deposition, using purified metalorganic precursors titanium-iso-propoxide and tetra-ethyl-lead. The results of the cross-section scanning electron microscopy and x-ray diffraction (XRD), including theta and phi scan, show that the films are epitaxy, and a domains and c domains may align alternately in the thin films. The experiments of high-temperature XRD reveal the nature of the phase transition of grown PbTiO3 thin films from tetragonal to cubic phase. The transition temperature is around 460 °C which is far lower than that of bulk PbTiO3 and the thin films deposited on fused quartz substrates. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113545
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