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  • 1995-1999  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    The role of S passivation on magnetic properties of Fe overlayers grown on GaAs(100) (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1621-1624 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have produced epitaxial Fe overlayers on sulfur-passivated GaAs(100) surfaces by CH3CSNH2 treatment, and investigated the correlation between magnetic properties of the overlayers and surface chemical structure of GaAs(100) surfaces by ferromagnetic resonance and synchrotron radiation photoemission. The surface chemical properties were modified by changing the annealing temperature of the surfaces prior to the growth. The results show that the magnetization of Fe overlayers is crucially determined by the presence of Ga–S chemical bonds and excess As after the anneals. A comparative investigation of the magnetization has been made on both S passivated and clean GaAs(100). It is confirmed that S passivation on the GaAs surface can effectively eliminate the magnetization deficiency previously attributed to interdiffusion of As into the Fe overlayer. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370936
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    A sulfur passivation for GaAs surface by an organic molecular, CH3CSNH2 treatment (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2282-2284 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A sulfur passivation method for GaAs, CH3CSNH2 treatment has been developed. It is quite effective for removing the surface oxide layer and forming the sulfide passivation layer on GaAs surface. The enhancements of the PL intensity reveal the reduction of the surface recombination velocity and the reduction of density of defect states by this treatment. The synchrotron radiation photoemission spectroscopy measurements show that sulfur atoms bond both Ga and As atoms. After being annealed, a stable sulfur passivation layer is terminated on the surface due to the As2S3 component react with GaAs into the GaS component. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117534
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    Paper (German National Licenses)
    Fulltext
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