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  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new method to improve the morphology and the microstructure of sputtered bismuth-substituted garnet films for optical storage is discussed. The method employs a high ramp up rate and recurrent annealing as well as quenching in an air environment, which results in smaller grain size, smoother surface, and less void volume in the garnet films than that from a conventional oven annealing. We have discovered that samples prepared with a more recurrent annealing only appeared as a single garnet phase, and the samples with a less recurrent annealing appeared as a garnet phase as well as DyFeO3 phase. We observed the microstructure of the annealed films with scanning electron microscopy (SEM). By applying the new method, the as-deposited films had been successfully crystallized to the (BiDy)3(FeGa)5O12 garnet phase with the grain size of about 300–400 A(ring). They exhibited excellent magneto-optical properties with a high coercive force about 1300 Oe and an effective Kerr angle of 1.5°. The crystallization process of as-deposited amorphous films as well as the structure, composition, and magnetic and magneto-optical properties of the crystallized garnet films were examined.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1621-1624 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have produced epitaxial Fe overlayers on sulfur-passivated GaAs(100) surfaces by CH3CSNH2 treatment, and investigated the correlation between magnetic properties of the overlayers and surface chemical structure of GaAs(100) surfaces by ferromagnetic resonance and synchrotron radiation photoemission. The surface chemical properties were modified by changing the annealing temperature of the surfaces prior to the growth. The results show that the magnetization of Fe overlayers is crucially determined by the presence of Ga–S chemical bonds and excess As after the anneals. A comparative investigation of the magnetization has been made on both S passivated and clean GaAs(100). It is confirmed that S passivation on the GaAs surface can effectively eliminate the magnetization deficiency previously attributed to interdiffusion of As into the Fe overlayer. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2282-2284 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A sulfur passivation method for GaAs, CH3CSNH2 treatment has been developed. It is quite effective for removing the surface oxide layer and forming the sulfide passivation layer on GaAs surface. The enhancements of the PL intensity reveal the reduction of the surface recombination velocity and the reduction of density of defect states by this treatment. The synchrotron radiation photoemission spectroscopy measurements show that sulfur atoms bond both Ga and As atoms. After being annealed, a stable sulfur passivation layer is terminated on the surface due to the As2S3 component react with GaAs into the GaS component. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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