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  • 1
    Electronic Resource
    Electronic Resource
    Be-Cr-doped high-corrosion-resistant magneto-optical disks : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4764-4766 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The addition of Be to TbFeCo thin-film layers results in the gradual deterioration of carrier-to-noise ratio (CNR) and optimized recording power Pw compared with that of Cr. Be and Cr composite-doped disks, whose CNR maintain over 54 dB at a recording frequency of 1 MHz, prevent bit-error-rate (BER) levels from increasing in accelerated environmental tests. It is noted that even prior to environmental stability testing, BER of Be-Cr composite-doped disks is less than that of nondoped disks. From the results obtained by Auger electron spectroscopy analysis, it is explained that this difference is caused by fluctuations in the reflections of disks resulting from varying thicknesses of extra layers formed as a result of reaction between TbFeCo and SiN. Finally, through the write-erase cycle test and differential scanning calorimetry analysis, it has been demonstrated that Be-Cr-doped disks possess a higher thermal durability than nondoped disks.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348272
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  • 2
    Electronic Resource
    Electronic Resource
    Ferromagnetic amorphouslike oxide films of the Fe2O3-Bi2O3-PbTiO3 system prepared by rf-reactive sputtering (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3663-3669 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper, the magnetic properties of ferromagnetic oxide films of the ternary Fe2O3-Bi2O3-PbTiO0 system prepared by rf-reactive sputtering are presented. As-sputtered films deposited at a substrate temperature below 400 °C are amorphous and behave paramagnetically. Amorphous films like these whose composition corresponds to the perovskite solid solution of BiFeO3 -PbTiO3 become crystalline with a perovskite structure on annealing in air, but no distinct spontaneous magnetization appears. On the contrary, in certain compositions in the Fe2O3 -Bi2O3 -PbTiO3 system, the samples retain a glassy (or amorphouslike) state even when the samples were annealed at around 600 °C. Also a spontaneous magnetization appears at room temperature. The maximum room-temperature saturation magnetization 4πMs achieved in this system is 1.67 kG with the composition 0.74Fe2O3 -0.16Bi2O3 -0.10PbTiO3. Experiments imply that the amorphous state is essential for establishment of strong ferromagnetism in the sputtered oxide films. Mössbauer spectroscopy and x-ray photoelectron spectroscopy were performed to examine the microscopic properties of the films that lead to ferromagnetism. The optical transmissivity and magneto-optical Faraday effect of the films are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348483
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  • 3
    Electronic Resource
    Electronic Resource
    Film structure and magnetic properties of ferromagnetic amorphous Bi2O3-Fe2O3-PbTiO3 films prepared by rf-reactive sputtering (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3760-3764 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous-like oxide films of the Bi2O3-Fe2O3-PbTiO3 ternary system prepared by rf-reactive sputtering exhibit ferromagnetism and ferroelectricity simultaneously well above room temperature. In this paper, we have investigated the relation between the film structure and the magnetic properties of the films by means of x-ray diffractometry, transmission electron microscopy, magnetization measurement with a vibrating-sample magnetometer, and Mössbauer spectroscopy. The film composition used in the study is 0.16Bi2O3-0.74Fe2O3-0.10PbTiO3, which attains the maximum magnetization in this ternary system. It is revealed that ferromagnetism originates from the amorphous part in the films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349230
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  • 4
    Electronic Resource
    Electronic Resource
    Composition dependence of lattice spacing for low dislocation density undoped liquid encapsulated Czochralski GaAs crystals (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 182-184 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Crystals with varied composition were pulled by the As-partial-pressure controlled liquid encapsulated Czochralski method. The dislocation density was found to be as low as 2×103 cm−2 at the cores of the crystals. Lattice spacing (d) was measured with a precision of Δd/d ∼ 5.9 × 10−6 using synchrotron radiation. For a variation of 7×10−5 in the As-atom fraction in the crystals, the lattice spacing varied by less than 1×10−5 A(ring).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347740
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  • 5
    Electronic Resource
    Electronic Resource
    Magnetic anisotropy by ferromagnetic particles alignment in a magnetic field (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4493-4495 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic and optical properties of films composed of ferromagnetic fine particles aligned in a magnetic field were investigated. The spin-coated films were prepared by using a solution of magnetite fine particles dissolved in water-diluted polyvinyl alcohol (PVA) on glass substrates, and followed by drying at 80 °C and solidifying at 200 °C in a magnetic field. Linear-chain clusters of magnetite particles were formed in a considerably weak field below 1 kOe, which give rise to magnetic and optical uniaxial anisotropies. Both properties vary depending on preparation conditions such as the particle concentration, the viscosity of the solution, and the field strength during drying.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344892
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  • 6
    Electronic Resource
    Electronic Resource
    Depth selective Mössbauer spectroscopic study of Fe3O4 epitaxial films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1735-1740 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Several (111) oriented 56Fe3O4 films containing a 5-A(ring)-thick 57Fe3O4 probe layer at or below the surface were grown epitaxially on the α-Al2O3 (0001) surface by a reactive vapor deposition method. Conversion electron Mössbauer spectroscopy was applied at 6, 78, and 300 K by using a recently developed helium-filled proportional counter. The well-crystallized surface has been found to be surprisingly stable even in air as characterized by the Mössbauer parameters that are almost the same as for the bulk. Moreover, the Verwey transition was detected clearly even in the 5-A(ring)-thick surface layer. However, the ferrous components seem to have changed their Mössbauer parameters probably because of their sensitivity to any crystalline field modifications in the surface. Generally speaking, the quality of epitaxial Fe3O4 films is very high: Any unusual surface state, if present, is confined in a shallow depth of ≤ 5 A(ring).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346602
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  • 7
    Electronic Resource
    Electronic Resource
    A tunneling instrument for angle resolved tunneling spectroscopy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 2424-2426 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new tunneling instrument has been developed to observe the anisotropy of the Fermi surface. This instrument has two advantageous mechanisms over the conventional scanning tunneling microscope (STM); a tilt mechanism to keep two crystals parallel to each other and a rotation mechanism of the proven crystal over the sample crystal. We have evaluated its performance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142524
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  • 8
    Electronic Resource
    Electronic Resource
    Very high speed GaInAs metal-semiconductor-metal photodiode incorporating an AlInAs/GaInAs graded superlattice (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 16-17 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A lateral structure metal-semiconductor-metal photodiode has been fabricated on GaInAs, in which an AlInAs/GaInAs graded superlattice has been incorporated. This photodiode has exhibited a dark current lower than 100 nA, an internal quantum efficiency of greater than 80% at a wavelength of 1.3 μm, and a capacitance of 40 fF, all at the bias voltage of 10 V. The response speed of this photodiode has been characterized by electro-optic sampling to exhibit a full width at half maximum of 14.7 ps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100822
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  • 9
    Electronic Resource
    Electronic Resource
    Room-temperature exciton optical absorption peaks in InGaAsP/InP multiple quantum wells (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1353-1355 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We grew In1−xGaxAsyP1−y/InP quantum wells (QWs) by low-pressure metalorganic vapor phase epitaxy. The In1−xGaxAsyP1−y layer was closely lattice matched to InP with a composition of y=0.9 (x=0.47y). We investigated structural imperfections such as composition fluctuations, interface roughness, and nonperiodicity analyzing the low-temperature photoluminescence linewidth. We found that the InGaAsP layer composition fluctuated, causing about 5 meV inhomogeneity in the exciton energy level in QWs wider than about 3 nm. Since we obtained very smooth interfaces with less than one monolayer of fluctuation and excellent periodicity by lowering growth temperature to 570 °C, the inhomogeneity of the exciton energy level could be held at 6 meV for 20-period 10-nm multiple QWs. As a result, despite composition fluctuations, a clear room-temperature exciton optical absorption peak was observed at 1.5 μm for the first time to our knowledge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100713
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  • 10
    Electronic Resource
    Electronic Resource
    Evaluation of exciton absorption peak broadening factors in InGaAsP/InP multiple quantum wells (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2290-2292 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We evaluated the magnitude of broadening factors of ground-state exciton absorption peaks in In1−xGaxAsyP1−y/InP (x=0.47y) multiple quantum wells (MQW's) with about 10 nm wells. The absorption peaks broadened with a decrease of y. Analyzing the absorption peak broadening with increasing temperature, the thermal broadening factor at 300 K was found to be about 9 meV and composition independent. Analyzing the photoluminescence linewidth at 4.2 K, it was found that composition fluctuations in the well caused an inhomogeneity of the exciton energy level of 4.4 meV for the y=1.0 MQW and 7.5 meV for the y=0.6 MQW, being the greatest contributors to inhomogeneous broadening. We conclude that the exciton absorption peak broadening with a decrease of y is primarily due to the increase of composition fluctuations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100256
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