Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Electronic properties of silicon δ-doped InSb (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 671-675 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated magneto-transport and cyclotron resonance (CR) of two-dimensional electron gas in silicon δ-doped p-InSb under a magnetic field of up to 12 T at 4.2 K. Because there are multiple subbands occupied, Shubnikov–de Haas oscillations show a beating behavior. The CR spectra also display several peaks originating from different subbands. Effective masses of electrons associated with the lowest three subbands can therefore be directly determined, and they are in excellent agreement with a self-consistent calculation, which takes into account the electrostatic Poisson equation, the Schrödinger equation, and realistic sample parameters. Furthermore, we observed an absorption peak, whose resonance position has anomalous angle dependence. It is attributed to impurity CR where donors are in the vicinity of the δ-doped sheet.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351850
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Use of atomic layer epitaxy buffer for the growth of InSb on GaAs by molecular beam epitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7166-7172 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A 300 A(ring) buffer layer of InSb grown by atomic layer epitaxy at a substrate temperature of 300 °C at the GaAs/InSb interface has been employed to grow epitaxial films of InSb having bulk-like properties. The reduction of the defects in the top InSb film has been observed with cross-sectional transmission electron microscopy and channeling Rutherford backscattering spectroscopy. The optimum substrate temperature for the primary InSb layer growth was 420 °C with an atomic flux ratio of Sb to In of 1.4 and a growth rate of 1 μm/h. The best 5-μm-thick InSb layers had x-ray rocking curve widths of 100 s, 77 K n-type carrier concentrations in the low 1015/cm3 range, and 77 K carrier mobilities greater than 105 cm2/V s. Mesa isolated photodiodes had carrier lifetimes of 20 ns, in comparison to 200 ns observed in bulk InSb having a similar carrier concentration. An unexplained, weak free-electron spin resonance transition has been observed in these films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347608
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Activation of D1 and D2 Dopamine Receptors Inhibits Protein Kinase C Activity in Striatal Synaptoneurosomes (1994)
    Oxford, UK : Blackwell Science Ltd
    Journal of neurochemistry 63 (1994), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: The effects of D1 and D2 dopamine ligands on protein kinase C (PKC) activity were examined in synaptoneurosomes. Incubation with D1 agonists (SKF 38393, fenodopam), in the presence of calcium, decreased the soluble and increased the particulate PKC activity. These effects were reversed by SCH 23390, which by itself had the opposite effect of increasing the soluble and decreasing the particulate PKC activity. In contrast, incubation with the D2 agonists [LY 171555, (+)-3-(3-hydroxyphenyl)-N-n-propylpiperidine, RU 24213] increased the soluble and decreased the particulate PKC activity. These effects were reversed by sulpiride. (−)-3-(3-Hydroxyphenyl)-N-n-propylpiperidine had a D2 antagonist profile. Apomorphine showed a biphasic dose-response change; i.e., it decreased particulate PKC activity at the D2 receptor at low concentrations (0.1 µM) and increased it at the D1 receptor at higher concentrations (10 µM). Pretreatment with tetrodotoxin or omission of calcium in the incubation medium did not alter the responses of the D2 agonists, but it reversed the changes in PKC activity induced by the D1 agonists and converted the biphasic response of apomorphine to a monophasic inhibition. These results indicate that (1) D1 and D2 dopamine receptors are negatively coupled to PKC and (2) the increase in particulate PKC activity seen with the D1 drugs in the presence of calcium is mediated indirectly via a transneuronal effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1471-4159.1994.63010169.x
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Flat response detectors for the vacuum ultraviolet and soft x-ray region: InP:Fe photoconductors (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2596-2599 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated that InP:Fe photoconductive detectors are sensitive to radiation between 20 and 3000 eV. Within experimental error the measured response is flat in this energy range, in agreement with theory. This property, coupled with the simplicity and high speed (full width at one half maximum of less than 200 ps) of these devices, makes them very interesting for the measurement of pulsed vacuum ultraviolet and x-ray radiation and the total instantaneous integrated radiative power emitted from a pulsed source. Low fidelity response can occur in these devices for excitation times that are many times longer than the primary response time of the detector.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337127
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Mismatch Repair in Escherichia Coli (1986)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Genetics 20 (1986), S. 523-538 
    Details
    ISSN: 0066-4197
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Biology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.ge.20.120186.002515
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Application of InP:Fe photoconductors as a fast and sensitive soft x-ray detector and bolometer (abstract) (1985)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 846-846 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Recently we have demonstrated that InP:Fe photoconductors are fast (FWHM∼150 ps), sensitive (2.7×10−3 A/W), and flat response soft x-ray detectors using synchrotron radiation from the Stanford Synchrotron Radiation Laboratory.1 We have applied these to the measurement of the radiation emitted by a collapsing annular gas (argon) puff z-pinch plasma. The detector was used in two modes of operation: (1) a filtered soft x-ray detector as a pinch diagnostic and (2) a fast unfiltered bolometer to measure the total radiated power as a function of time. We will compare the performance of the photoconductors to other common fast x-ray detectors and bolometers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138064
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Photoconductor x/γ-ray detectors and x-ray bolometers (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 2182-2183 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Photoconductors are very promising x/γ-ray detectors and x-ray bolometers for pulsed x/γ-ray measurements. They are fast, sensitive, and theoretically flat in spectral response for low energy x rays. We report our tests of InP:Fe, GaAs, and GaAs:Cr, both neutron damaged and undamaged, at Nova laser, Febetrons, and electron linear accelerators. The temporal and spectral responses are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138724
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Interfacial roughness in InAs/GaSb superlattices (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3476-3478 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using high-resolution transmission electron microscopy (HRTEM), we have studied InAs/GaSb superlattices grown by molecular beam epitaxy. Our HRTEM observations indicate that the apparent interface width is on the order of 1 monolayer for InSb-like interfaces, and on the order of 2 monolayers for GaAs-like interfaces. The combination of these results with x-ray diffraction and Raman scattering measurements leads us to conclude that these interface widths are principally due to roughness rather than to interfacial diffusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111245
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Dependence of InAs phonon energy on misfit-induced strain (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3434-3436 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transverse-optical (TO) phonon energy in strained InAs quantum wells has been investigated by using far-infrared absorption. We observe that the TO phonon energy decreases when the misfit-induced biaxial tension in the InAs single quantum well is increased. Our result shows a stronger phonon energy dependence on the strain than the one reported by Cerdeira et al. [Phys. Rev. B 5, 580 (1972)]. The discrepancy may be explained by stress relaxation near the surface in their experiment. The application of our result will be discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110137
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Large temperature changes induced by molecular beam epitaxial growth on radiatively heated substrates (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2338-2340 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed optical transmission measurements on radiatively heated GaAs substrates as a function of molecular beam epitaxial growth of InAs, GaSb, AlSb, and GaAs films. The energy gap of the GaAs substrate is observed to decrease strongly in energy when materials with band gaps smaller than GaAs are deposited. This decrease in energy gap is a consequence of a substantial increase in growth temperature induced by the deposition of the film. We have observed increases in temperature of over 150 °C from the temperature measured before film growth. Because the thermocouple is weakly coupled to the radiatively heated substrate, conventional temperature controllers are ineffective at measuring or accounting for this change in temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108236
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...