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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 2992-2994 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Xenon enriched with nonmagnetic isotopes, in which the content of magnetic isotopes is less than 0.4%, has been used as the low temperature matrix for the observation of electronic spin resonance (ESR) spectra of SiH3 radicals and H atoms. The SiH3 radicals were generated by the reaction of SiH4 with H atoms produced by the photolysis of HI. Well resolved proton hyperfine structures, which were smeared out into a broad singlet spectrum when natural xenon was used as the matrix, were observed. The ESR parameters were determined by numerical deconvolution and compared with those obtained for the radicals trapped in other matrices. Simple doublet spectrum of H atoms without superhyperfine structures was also observed after the photolysis of HI at 4.2 K.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4161-4166 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The origin of the observed large half width of photoluminescence spectra for InGaAs/InP quantum wires fabricated by electron beam lithography and reverse-mesa wet etching have been investigated. First, we studied size fluctuations in the fabricated wires using an atomic force microscope. We also studied other factors that can affect the photoluminescence half width. We found that the interface carrier concentration and size fluctuations play dominant roles in shaping the luminescence spectrum for wires narrower than 200 A(ring). For wider wires, the carrier concentration was found to be a factor in the broadening. These results indicate that a large half width itself does not directly mean a degradation of device performance, but the amount of size fluctuations limits it.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 720-722 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated ultranarrow InGaAs/InP buried quantum well wires by means of electron beam lithography and reverse mesa wet etching. Owing to the reverse mesa etching profile, the lateral dimension of the wires has been reduced to 10 nm. Furthermore, we investigated the optical characteristics of these wires by photoluminescence and observed, for the first time, clear dependence of luminescence wavelength upon the wire width even for wires down to 10 nm, which is well explained by the theoretical calculation. The blue-shifted shoulder structures were also observed and they were assigned theoretically to be the second quantized level.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1094-1096 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The polarization properties of edge-emitted electroluminescence from InGaAs/InP quantum wires fabricated by reverse-mesa wet etching, electron-beam lithography, and overgrowth, are investigated. Strongly TE polarized electroluminescence from relatively wide wires approaches isotropy as the wires become narrower. The observed dependence on wire size is attributed to a transition from a two-dimensional to a one-dimensional system. The implication is that quantum wires could potentially be applied to polarization-controlled devices, such as polarization insensitive optical amplifiers.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2473-2475 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The saturation of the critical current as a function of the gate voltage found in the Nb-Si-Nb superconducting field effect transistor is analyzed numerically using the de Gennes expression for the proximity effect. According to the analysis, (i) the Schottky barrier effect is found to be negligible under experimental conditions, (ii) mobility of silicon fitted to the experimental curve shows a power relation to the gate voltage with exponent of about −0.81. This exponent is consistent with the results from independent experiments and a simple theory of surface scattering. The results indicate that the surface scattering effect causes the saturation phenomenon.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 4 (1992), S. 1115-1121 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The high-n helicity-induced shear Alfvén eigenmodes (HAE) are considered both analytically and numerically for the straight helical magnetic system, where n is the toroidal mode number. The eigenmode equation for the high-n HAE modes is derived along the field line and, with the aid of the averaging method, is shown to reduce to the Mathieu equation asymptotically. The discrete HAE modes are shown to exist inside the continuum spectrum gaps. The continuous spectrum gaps appear around ω2=ω2A[N(lι(large-closed-square)−m)/2]2 for N=1,2,..., where ωA is the toroidal Alfvén transit frequency, and l, m, and ι(large-closed-square) are the polarity of helical coils, the toroidal pitch number of helical coils, and the rotational transform, respectively. For the same ωA and ι(large-closed-square), the frequency of the helical continuum gap is larger than that of the continuum gap in tokamak plasmas by ||l−ι(large-closed-square)−1m||. The polarity of helical coils l plays a crucial role in determining the spectrum gaps and the properties of the high-n HAE modes. The spectrum gaps near the magnetic axis are created by the helical ripple with circular flux surfaces for l=1, and ≥3 helicals. For l=2 helical systems, the spectrum gaps are created by the ellipticity of the flux surfaces. These analytical results for the continuum gaps and the existence of the high-n HAE modes in the continuum gaps are confirmed numerically for the l=2 case, and it is found that the HAE modes exist for mode structures with the even and the odd parities.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Inorganic chemistry 13 (1974), S. 2611-2617 
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 86 (1987), S. 4949-4951 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The radicals formed by the reaction of GeH4 with H in the Xe matrix were investigated by electron spin resonance (ESR) spectroscopy at very low temperatures. The radicals observed were identified as GeH3 and GeH5. The newly observed radical GeH5 is considered as the intermediate of the reaction H+GeH4→H2+GeH3. The ESR parameters of these radicals were determined by numerical deconvolution of the observed spectra.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1432-1904
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology , Natural Sciences in General
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Inflammation research 18 (1986), S. 61-64 
    ISSN: 1420-908X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract Rat peritoneal mast cells were stained with quin 2, a fluorescent Ca2+ chelator. By means of a fluorescence microscope and real time image processer, it was revealed that the fluorescence derived from the Ca-quin 2 complex was weak in the area occupied by the nucleus and distributed unevenly in the cytoplasm of the resting cells so as to encompass the individual granules. When compound 48/80 or substance P was added in a Ca-free medium, the fluorescence intensity of quin 2 increased markedly all over the cell, suggesting that a large amount of Ca2+ was released from intracellular Ca stores. The increase in the fluorescence intensity produced by compound 48/80 or substance P in a Ca-free medium was inhibited by pretreatment with certain drugs eliciting an increase of c-AMP levels, such as dibutyryl c-AMP and theophylline, or by some anti-allergic drugs providing a membrane stabilizing action.
    Type of Medium: Electronic Resource
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