Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
75 (1994), S. 4161-4166
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The origin of the observed large half width of photoluminescence spectra for InGaAs/InP quantum wires fabricated by electron beam lithography and reverse-mesa wet etching have been investigated. First, we studied size fluctuations in the fabricated wires using an atomic force microscope. We also studied other factors that can affect the photoluminescence half width. We found that the interface carrier concentration and size fluctuations play dominant roles in shaping the luminescence spectrum for wires narrower than 200 A(ring). For wider wires, the carrier concentration was found to be a factor in the broadening. These results indicate that a large half width itself does not directly mean a degradation of device performance, but the amount of size fluctuations limits it.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.355998
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