Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 1990-1994  (117)
  • 1975-1979  (12)
  • 1965-1969  (6)
Source
Material
Years
Year
Keywords
  • 1
    Electronic Resource
    Electronic Resource
    Phase transition of new solid solution crystal Li0.7Na0.3NbO3 (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1983-1985 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A ferro-antiferroelectric Li0.7Na0.3NbO3 solid solution crystal was grown from the melt by the Czochralski method. It has been found from the high temperature x-ray diffraction that the crystal is orthorhombic with a unit cell of dimensions a=5.374(9) A(ring), b=5.152(1) A(ring), and c=16.738(0) A(ring) at 25 °C, and undergoes a structural phase transition from orthorhombic to tetragonal at 480 °C. It was confirmed from the observation of the D-E hysteresis loop and the pyroelectric measurements that the mixed crystal Li0.7Na0.3NbO3 undergoes a first order ferroelectric phase transition at 480 °C. In the dielectric measurements, the dielectric behavior in the vicinity of the phase transition temperature reveals a diffusive character and also a pronounced dielectric dispersion due to an ionic hopping observed over the wide temperature range near 298 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357662
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Product distributions and rate constants for the reactions of CH3+, CH4+, C2H2+, C2H3+, C2H4+, C2H5+, and C2H6+ ions with CH4, C2H2, C2H4, and C2H6 (1977)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 81 (1977), S. 1798-1805 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100534a002
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Preferential solvation of single ions. A critical study of the Ph4AsPh4B assumption for single ion thermodynamics in amphiprotic and dipolar-aprotic solvents (1978)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 82 (1978), S. 191-199 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100491a013
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Defect band behavior in p-Cd0.96Zn0.04Te by hydrogen passivation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4077-4079 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence measurements were carried out in order to investigate the dependence of the optical properties of p-Cd0.96Zn0.04Te single crystals on hydrogen passivation conditions. After the p-Cd0.96Zn0.04Te was annealed at 500 °C in a Cd atmosphere for 5 h, the luminescence due to the recombination of the electrons in the conduction band with acceptors (eA°) and to the donor–acceptor pair (DAP) transitions disappeared. After the p-Cd0.96Zn0.04Te was hydrogenated, the intensity of the exciton luminescence increased so that the (eA°) and DAP peaks related to the Cd vacancies disappeared, and the defect band in the low energy range between 1.4 and 1.5 eV also vanished. These results indicate that hydrogen atoms passivated not only shallow donors but also deep acceptor impurities and that the hydrogen atoms were separated from the hydrogenated samples at 400 °C due to their thermal energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352833
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Topographic effect of surface roughness on thin-film flow (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 422-428 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article addresses the effect of topographic structure of surface roughness on the flow of a thin film over a rotating disk. Six factors, namely centrifugation, surface tension, viscosity, air-shear, disjoining pressure, and surface roughness, that affect the depletion of the film are considered. Depletion histories of a thin film are given for cases involving deterministic as well as stochastic descriptions of surface roughness. It has been found that surface roughness of the disk plays a significant role in thin-film flow, and different topographic structures of the surface roughness lead to different asymptotic limits of liquid retention. The interplay of topographic parameters such as the height, skewness, and frequency of surface asperities on lubricant retention is also investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353866
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    A study on the Kerr effect enhancement by the multidielectric layer structure : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5987-5988 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Many types of magneto-optical structures have been investigated to improve the MO Kerr effect. We have studied the enhancement of the MO Kerr effect in the Tb21Fe79 amorphous film having a multidielectric structure in which the TiO2 layer is sandwiched by SiNx layers. The variations of Kerr angle and reflectivity with the thickness of dielectric layer are calculated by using the reiterative formula [M. Mansuripur, G. A. N. Connel, and J. W. Goodman, J. Appl. Phys. 53, 4485 (1982)]. Experiment and simulation results are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347813
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Characteristics of step-graded separate confinement quantum well lasers with direct and indirect barriers (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1964-1967 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented on step-graded separate confinement quantum well lasers with Al0.85Ga0.15As outer confining layers, AlxGa1−xAs barriers and a 50-A(ring) GaAs quantum well grown by metalorganic chemical vapor deposition. By varying xb from 0.15 to 0.60, we show that, given an adequate optical waveguide confinement factor and sufficient cavity length, the collection of electrons in thin quantum wells with either direct or indirect barriers can be highly efficient, transfer of electrons from indirect barriers to thin direct wells does not degrade laser performance, and electron confinement in the separate confinement region plays no role in the operation of the laser.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347178
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Dependence of the optical properties of p-CdTe and p-Cd0.96Zn0.04Te on the bromine concentration in a bromine-methanol etching solution (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4074-4076 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence measurements were carried out to investigate the dependence of the optical properties of p-CdTe and p-Cd0.96Zn0.04Te on various relative concentrations of bromine in a mixture of methanol and bromine. As the bromine concentration increased, the intensity of the luminescence increased; additionally, an exciton bound to a neutral acceptor (A°X) peak at 1.588 eV in p-CdTe was resolved into an exciton bound to neutral donor (D°X) peak at 1.592 eV and an A°X peak. The mixed bands of the 1.574 and 1.546 eV peaks were well resolved by using an etching bromine concentration of 2%; in particular, the intensities of the D°X and 1.574 eV peaks increased as much as five and seven times, respectively. The intensity of the peak at 1.48 eV related to defects also increased. The intensity of A°X at 1.609 eV in p-Cd0.96Zn0.04Te changed slightly with the bromine concentration. The intensities of the luminescence peaks due to the recombination of the electrons in conduction band with acceptors and to the defect relation did not vary. These results indicated that the number of Cd vacancies could be reduced due to the addition of Zn.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352832
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Multicarrier characterization method for extracting mobilities and carrier densities of semiconductors from variable magnetic field measurements (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8324-8335 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple, practical method is described to extract the carrier concentration and mobility of each component of a multicarrier semiconductor system (which may be either a homogeneous or multilayered structure) from variable magnetic field measurements. Advantages of the present method are mainly due to the inclusion of both the longitudinal and transverse components of the conductivity tensor and normalization of these quantities with respect to the zero-field longitudinal component of the conductivity tensor. This method also provides a simple, direct criterion by which one can easily determine whether the material under test is associated with a one-carrier or multicarrier conduction. The method is demonstrated for a simple one-carrier system [GaAs single-channel high-electron-mobility-transistor (HEMT) structure] and two multicarrier systems (an InGaAs-GaAs double-channel HEMT structure and two types of carriers present in an InGaAs single-channel HEMT structure). The analysis of the experimental data obtained on these samples demonstrates the utility of the method presented here for extracting carrier concentrations and mobilities in advanced semiconductor structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353424
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Multi-shot evolution of laser-induced periodic structure on the surface of polycrystalline silicon-on-insulator (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4208-4211 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The multi-shot evolution of laser-induced periodic structure was studied by the time-resolved optical diffraction and reflection from the surface of polycrystalline silicon-on-insulator during the accumulation of 20 ns ruby laser pulses. In contrast to the results previously reported for the bulk sample, it was observed that the channel of the periodic structure development changed during the multiple irradiations even with a fixed fluence. The observed change occurs because the energy absorption is enhanced by the presence of the periodic structure preformed by the preceding pulses, and the absorbed laser energy at the polycrystalline layer is insulated by the underlying SiO2 layer. A previously unappreciated dip structure was observed in the time-resolved diffraction and a possible explanation is suggested postulating the preferential energy deposition in the valleys of the periodic structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350799
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...