Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 1990-1994  (20)
  • 1965-1969  (3)
  • 1955-1959  (2)
  • 1
    Book
    Book
    ¬The¬ Internet message: closing the book with electronic mail (1993)
    Englewood Cliffs, NJ :Prentice-Hall,
    Details
    Title: ¬The¬ Internet message: closing the book with electronic mail
    Author: Rose, Marshall T.
    Publisher: Englewood Cliffs, NJ :Prentice-Hall,
    Year of publication: 1993
    Pages: 370 S.
    Series Statement: Prentice Hall series in innovative technology
    Type of Medium: Book
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    ZIB Catalog
    Zuse Institute Berlin get availability status
  • 2
    Electronic Resource
    Electronic Resource
    Observation of hysteresis, transients, and photoeffects in the electrical properties of ZnSe/GaAs heterojunctions (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5226-5233 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electronic transport properties of a Au/n-ZnSe/n+GaAs structure are examined by studying the results of current-voltage (I-V) and capacitance-voltage (C-V) measurements at temperatures between 77 and 300 K in the dark and under illumination. C-V data at 77 K in the dark show a large hysteresis indicating long-time constants for reaching a steady state. The data also show a large shift in the peak capacitance towards higher-bias values as compared to room-temperature measurements. All 77-K capacitance values in the dark are considerably lower than both the ones at 77 K under illumination and the ones at room temperature. These results suggest charging of the lattice-mismatch-induced extended defect states in ZnSe near the heterojunction interface as well as macroscopic effects such as barrier-limited electron currents flowing into the ZnSe potential well. Furthermore, as additional evidence, 77-K capacitance transients in the data show two distinct time constants which are due to an initial charge rearrangement in ZnSe followed by a relaxation caused by photogenerated currents. I-V characteristics at 77 K show a steep rise in current at about 2.5 V on the Au, both in the dark and under illumination. This indicates either an effective bias-dependent barrier lowering or field-assisted tunneling/recombination current paths at the heterojunction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347066
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Electrical characterization of p-type ZnSe:Li epilayers grown on p+-GaAs by molecular-beam epitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4149-4151 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Small-signal ac admittance data are presented, and shown to provide accurate and unambiguous evidence of p-type behavior in Li-doped ZnSe epilayers grown on p+-GaAs. The devices measured are two-terminal vertical-transport structures, with unequal-area contacts in order to distinguish effects arising from the top metal Schottky barrier from those arising from the heterojunction. Qualitative features of the data alone are sufficient to determine the (positive) sign of the mobile carriers in the ZnSe. The data are analyzed using an equivalent-circuit model shown to be reliable for n-type ZnSe, from which the net doping and the ZnSe resistivity are extracted. Using these quantities, the ZnSe hole mobility is found to be about 28±4 cm2/V s. Schottky barrier and heterojunction barrier heights are also determined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348434
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Electronic Raman scattering from acceptors and correlation with transport properties in Li-doped ZnSe layers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2654-2656 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electronic Raman scattering (ERS) from holes bound to Li acceptors was studied in ZnSe layers and correlated with the net acceptor concentration NA−ND determined by capacitance versus voltage measurements. The layers were grown by molecular beam epitaxy on GaAs substrates and were doped in situ to NA−ND concentrations ranging from high 1015's to low 1017's cm−3. The ERS spectra reveal several transitions between the ground 1S and shallower S and P bound states of the Li acceptors as well as transitions to a continuum of delocalized valence-band states. Values of excitation energies for the bound hydrogenic states and the ionization energy of the acceptors were measured. The strength of the ERS signal normalized to the phonon scattering depends linearly on NA−ND. This relationship can be exploited in contactless characterization of p-type ZnSe.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104798
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Low-temperature growth of ZnSe by molecular beam epitaxy using cracked selenium (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 845-847 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of zinc selenide by molecular beam epitaxy using a cracked selenium source is studied. It is found that high quality growth can be achieved at substantially lower substrate temperatures than has been possible using uncracked selenium sources. It is determined from reflection high-energy electron diffraction observations that the use of cracked selenium produces growth dominated by a two-dimensional mechanism at substrate temperatures as low as 225 °C and that exposure of the GaAs substrate to cracked selenium prior to the initiation of growth has a substantial effect on the GaAs substrate and the early stages of ZnSe growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102680
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Impurity-band transport near the metal–insulator transition in ZnSe epilayers grown by molecular beam epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2669-2671 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical transport is studied in a number of ZnSe epilayers with donor concentrations in the range 1–3×1017 cm−3. Hall effect data are taken over the temperature range 10–300 K, and magnetoresistance data over the range 10–50 K. Transport is shown to be consistent with a two-carrier model, the second species being identified with transport in an impurity band distinct from the conduction band. At low temperature, the conductivity σ exhibits a log σ∝−(T0/T)1/4 behavior, and the samples show negative magnetoresistance. Moreover, both the parameter T0 and the magnetoresistance tend toward zero as the dopant concentration increases toward that of the metal–insulator transition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102826
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Structures and bonding of Group IVA sulfur and oxygen propellane derivatives (1991)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 113 (1991), S. 7924-7929 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00021a016
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Structure, bonding and relative stabilities of four-membered disiletane rings (1991)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 95 (1991), S. 4332-4337 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100164a030
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Free hole gas and its coupling to phonons in ZnSe:Li layers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 961-963 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The presence of a free hole gas and its coupling to longitudinal optical phonons were established with Raman spectroscopy in Li doped ZnSe layers grown by molecular beam epitaxy on GaAs substrates. The phonon spectra shift to higher frequencies and broaden with increasing acceptor concentration and temperature, according to the behavior of coupled phonon-plasmon modes. Values for the concentration and mobility of the holes were obtained from the analysis of the spectral line shapes. They agree with determinations by other methods. A linear relationship was found between the spectral broadening and the hole concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106315
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Blue-green injection lasers containing pseudomorphic Zn1−xMgxSySe1−y cladding layers and operating up to 394 K (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2462-2464 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the performance of blue-green injection lasers containing Zn1−xMgxSySe1−y cladding layers. The devices have yielded the lowest reported threshold current densities (500 A/cm2) and the highest reported pulsed output powers (500 mW) at room temperature. Lasing has been observed at temperatures as high as 394 K. The room temperature and 85 K lasing wavelengths are 516 and 496 nm, respectively. The use of Zn1−xMgxSySe1−y, instead of ZnSzSe1−z, cladding layers provides a clear improvement in optical confinement, demonstrated by the widening of the far-field pattern in the direction perpendicular to the layers. The lasers are separate-confinement heterostructures with a ZnS0.06Se0.94 waveguiding region and a single Cd0.2Zn0.8Se strained quantum well. The entire structure is pseudomorphic with the GaAs substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109319
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...