Bibliothek

X
feed icon rss

Ihre E-Mail wurde erfolgreich gesendet. Bitte prüfen Sie Ihren Maileingang.

Leider ist ein Fehler beim E-Mail-Versand aufgetreten. Bitte versuchen Sie es erneut.

Vorgang fortführen?

Exportieren
Filter
Datenquelle
Materialart
Erscheinungszeitraum
  • 1
    Digitale Medien
    Digitale Medien
    Threshold in electron-beam end-pumped II-VI lasers (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2633-2639 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Electron-beam end-pumped lasers from different bulk grown II-VI compounds have been experimentally studied and compared under similar preparation and excitation conditions. The reasons for the lasing threshold variations are discussed. The first results on e-beam pumped CdMnTe lasers and end-pumped CdTe lasers are reported. The order of lowest to highest threshold is found to be from CdSe, ZnCdSe, CdS, CdTe, CdMnTe, and ZnSe. The comparisons between lasing conditions are used to evaluate the contribution of the intrinsic semiconductor parameters to lasing threshold. Experiments with a large number of samples indicate that the influence of intrinsic and extrinsic parameters on lasing threshold are in most cases comparable. Therefore, for most bulk II-VI lasers, the average threshold pump power density reductions with the elimination of extrinsic factors are expected to be less than several times. These findings are further supported by our threshold and relative slope efficiency measurements on lasers with different output mirror couplings.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.339439
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 2
    Digitale Medien
    Digitale Medien
    Anomalous mobility and photo-Hall effect in ZnSe-GaAs heterostructures (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3047-3055 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The Hall and photo-Hall effect are studied experimentally in pure, unintentionally doped n-ZnSe epilayers grown by molecular-beam epitaxy on semi-insulating GaAs substrates. An anomalous depression of the dark values of the room-temperature and peak mobility in the n-ZnSe layer is observed in a substantial fraction of the samples studied, while normal values for the mobility are recovered under illumination with above-band-gap light. This is accompanied by an increase in the effective areal electron density. These results point to space-charge scattering causing the dark mobility reduction. The photo-Hall effect in ZnSe-GaAs heterostructures is discussed in terms of simple models considering both misfit dislocations at the heterostructure interface and extended defects in the bulk of the ZnSe epilayer. Additional photo-Hall experiments have been performed for longer-wavelength laser lines. In this case, the areal electron concentration decreases strongly under intense illumination, while a large room-temperature mobility enhancement is found. This net negative photoconductivity effect suggests a depletion of mobile electrons from the ZnSe epilayer, accompanied by the creation of a low-density but highly mobile conducting layer in the GaAs near the semiconductor heterointerface.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.344159
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 3
    Digitale Medien
    Digitale Medien
    dc and ac transport in molecular-beam-epitaxy-grown metal/ZnSe/GaAs heterojunction structures (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1753-1758 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The room-temperature electrical transport properties of ZnSe epilayers grown above the critical layer thickness on n+-GaAs substrates by molecular-beam epitaxy have been studied. dc current versus voltage and small-signal ac admittance versus voltage and frequency measurements were made on Schottky contacts (Au or Hg). A novel method of analysis is presented which, extending a previous model to include the three-dimensional effects of current spreading as a function of frequency, allows the ZnSe epilayer resistivity to be obtained. Combining this with the doping concentration obtained from analysis of the C-V characteristics, the ZnSe mobility may be calculated. Mobilities thus measured compare well with our own and other workers' published Hall mobility data on similar samples, as well as with theoretical calculations. We believe that our results represent a unique and detailed characterization of an epilayer heterostructure on a highly conducting substrate.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.344397
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 4
    Digitale Medien
    Digitale Medien
    Observation of hysteresis, transients, and photoeffects in the electrical properties of ZnSe/GaAs heterojunctions (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5226-5233 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Electronic transport properties of a Au/n-ZnSe/n+GaAs structure are examined by studying the results of current-voltage (I-V) and capacitance-voltage (C-V) measurements at temperatures between 77 and 300 K in the dark and under illumination. C-V data at 77 K in the dark show a large hysteresis indicating long-time constants for reaching a steady state. The data also show a large shift in the peak capacitance towards higher-bias values as compared to room-temperature measurements. All 77-K capacitance values in the dark are considerably lower than both the ones at 77 K under illumination and the ones at room temperature. These results suggest charging of the lattice-mismatch-induced extended defect states in ZnSe near the heterojunction interface as well as macroscopic effects such as barrier-limited electron currents flowing into the ZnSe potential well. Furthermore, as additional evidence, 77-K capacitance transients in the data show two distinct time constants which are due to an initial charge rearrangement in ZnSe followed by a relaxation caused by photogenerated currents. I-V characteristics at 77 K show a steep rise in current at about 2.5 V on the Au, both in the dark and under illumination. This indicates either an effective bias-dependent barrier lowering or field-assisted tunneling/recombination current paths at the heterojunction.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.347066
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 5
    Digitale Medien
    Digitale Medien
    Temperature dependence of threshold current in GaAs/AlGaAs quantum well lasers (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 599-601 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have calculated the threshold current and its temperature (T) dependence in the range 200–400 K for AlGaAs quantum well lasers with 25-A(ring)-wide GaAs wells using a model which includes lifetime broadening of the transitions and broadening of the density of states function by fluctuations in the well width. The threshold current varies approximately linearly with T and the principal effect of broadening is to increase the threshold current causing a reduction in the fractional change of current with temperature. The apparent value of the parameter T0 is increased to ≈400 K, compared with ≈320 K without broadening. The calculations are compared with experimental data.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.99647
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 6
    Digitale Medien
    Digitale Medien
    Mechanism for efficient blue second-harmonic generation in periodically segmented waveguides (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2540-2542 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We present a theoretical investigation of the mechanisms responsible for the recently reported efficient type I blue second-harmonic generation in periodically segmented KTiOPO4:Rb,Tl waveguides. In these guides, grating-assisted phase matching of second-harmonic light between 390 and 480 nm has been achieved. 5-mm-long guides give output powers on the order of 1 mW at around 425 nm with fundamental powers in the 50–100 mW range. We show that such high efficiencies can be expected from strongly perturbed guides through terms representing the modulation of phase mismatch and mode size in addition to the nonlinear susceptibility and refractive index modulations.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.103849
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 7
    Digitale Medien
    Digitale Medien
    Efficient type I blue second-harmonic generation in periodically segmented KTiOPO4 waveguides (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2074-2076 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report type I phase-matched blue second-harmonic generation from periodically segmented channel ion-exchanged waveguides in KTiOPO4 with output wavelengths from 0.38 to 0.48 μm and efficiencies exceeding 50%/W cm2. Evidence is presented suggesting that these efficiencies result from ferroelectric domain reversals induced by waveguide fabrication. Waveguide structure, wavelength, and output power characteristics are presented.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.103945
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 8
    Digitale Medien
    Digitale Medien
    Electron beam pumped II-VI lasers
    Amsterdam : Elsevier
    Journal of Crystal Growth 72 (1985), S. 504-511 
    Details
    ISSN: 0022-0248
    Quelle: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Thema: Chemie und Pharmazie , Geologie und Paläontologie , Physik
    Materialart: Digitale Medien
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-0248(85)90198-8
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 9
    Digitale Medien
    Digitale Medien
    Photo-hall model for space charge effects in n-ZnSe/GaAs:Cr heterostructures
    Amsterdam : Elsevier
    Journal of Crystal Growth 101 (1990), S. 828-834 
    Details
    ISSN: 0022-0248
    Quelle: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Thema: Chemie und Pharmazie , Geologie und Paläontologie , Physik
    Materialart: Digitale Medien
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-0248(90)91089-9
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 10
    Digitale Medien
    Digitale Medien
    Frequency doubling and phase matching with II-VI microcrystals
    Amsterdam : Elsevier
    Journal of Crystal Growth 101 (1990), S. 748-753 
    Details
    ISSN: 0022-0248
    Quelle: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Thema: Chemie und Pharmazie , Geologie und Paläontologie , Physik
    Materialart: Digitale Medien
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-0248(90)91073-Y
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
Schließen ⊗
Diese Webseite nutzt Cookies und das Analyse-Tool Matomo. Weitere Informationen finden Sie hier...