Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Absolute magnetometry at nanometer transverse spatial resolution: Holography of thin cobalt films in a scanning transmission electron microscope (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7418-7424 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method for the absolute measurement of magnetization at nanometer spatial resolution in magnetic thin films has been developed. A biprism placed in the illumination system of a scanning transmission electron microscope allows the operation of two distinct holography modes. The absolute mode displays a linear change in phase difference for regions of constant magnetization and thickness and the slope determines the magnitude of magnetization. The differential mode displays a constant value of phase difference in these regions allowing a simple and straightforward determination of domain wall profiles. Micromagnetic structure extracted from identical areas of thin Co films is compared using the new holography modes, differential phase constrast Lorentz microscopy and conventional Fresnel Lorentz microscopy in the same instrument.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356658
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Comment on "Electron holographic study of ferroelectric domain walls'' (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2446-2447 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109340
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Thickness dependence of ferroelectric domains in thin crystalline films (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1906-1908 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thickness dependence of ferroelectric domains in thin free-standing BaTiO3 crystalline films has been studied by transmission electron microscopy. It is found that the widths of ferroelectric domains decrease as the film thickness decreases. This phenomenon may indicate that the ferroelectric properties of thin films are weakened due to surface relaxation effects, including lattice relaxation and a change of spontaneous polarization and charge compensation. The weakening of ferroelectric domains is suggested as a transition state from ferroelectric to paraelectric phase of the BaTiO3 thin film. The thickness of the surface relaxation layer of totally nonferroelectric film is on the order of 10 nm. © 1994 American Institue of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112835
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Microanalysis on the (200) diffraction intensity to determine the Al concentrations for AlGaAs-GaAs multiple-quantum-well structures (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 698-704 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By using a nanoprobe electron beam 4 A(ring) in diameter, the [001] nanodiffraction patterns of AlGaAs-GaAs multiple-quantum-well structures have been formed and the epitaxial relationship between AlGaAs and GaAs is confirmed. The intensities of the (200) diffraction disk, monitored by a spot detector, are displayed in two ways: (1) the (200) dark-field scanning transmission electron microscopy (STEM), which shows the layers of AlGaAs and GaAs in contrast, and (2) the (200) line-scan profile, which reveals the (200) intensity distribution of a specimen region of uniform thickness. The thickness and the absolute Al concentration of AlGaAs layers are, respectively, determined from the contrast of, and the (200) thickness contour position in, the (200) dark-field STEM images. The microanalysis on the (200) line-scan profile is used to find the local Al concentrations in AlGaAs layers and to study the interface boundary between the layers of AlGaAs and GaAs. Diffusion of the Al atoms from the AlGaAs layer into the GaAs layer is also reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345774
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    The determination of structure factors from dynamical effects in electron diffraction (1969)
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 25 (1969), S. 129-134 
    Details
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: In order to obtain accurate data on structure factors from electron diffraction data, it is necessary to take into account the inevitable n-beam dynamical diffraction effects. The comparison of intensity values from detailed computer calculations with observed intensities from perfect crystals is reviewed for the cases of convergent beam diffraction patterns from MgO crystals of uniform thickness and of dark-field images of wedge-shaped crystals of silicon. An analysis of the sources of error in each case suggests that it may be possible to derive structure factor values with an accuracy of better than one per cent. The method, recently proposed by Watanabe et al. [Acta Cryst. (1968). A24, 249] for deriving structure factors from the values of accelerating voltages for which some Kikuchi lines disappear, is reviewed and possible sources of error are examined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0567739469000209
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Structure analysis of single crystals by electron diffraction. I. Techniques (1953)
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 6 (1953), S. 516-521 
    Details
    ISSN: 0001-5520
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0365110X53001411
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Structure analysis of single crystals by electron diffraction. II. Disordered boric acid structure (1953)
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 6 (1953), S. 522-529 
    Details
    ISSN: 0001-5520
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0365110X53001423
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Structure analysis of single crystals by electron diffraction. III. Modification of alumina (1953)
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 6 (1953), S. 846-853 
    Details
    ISSN: 0001-5520
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0365110X53002489
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Diffuse scattering in electron diffraction patterns. I. General theory and computational methods (1968)
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 24 (1968), S. 109-116 
    Details
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: The solution of the n-beam dynamical theory of the diffraction of electrons by crystals is generalized to cover the case of diffraction by crystals containing defects and disorders, including thermal motion. The conditions and assumptions under which practical computer calculations of diffuse intensities can be made are explored on the basis of the slice approach of Goodman and Moodie, although matrix methods are equally applicable. It is shown that, if the range of correlation of the deviations from the perfect crystal lattice is small, the total diffuse scattering can be expressed in terms of dynamical factors which multiply the intensities calculated using the kinematical approximation. Simple expressions are derived for the absorption coefficients which must be applied to the sharp Bragg reflexions to take account of the energy lost from them into the diffuse scattering. The possibility that the intensity of diffuse scattering may show dependence on the range of correlation of the defects is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0567739468000148
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Kinematical diffraction from solid solutions with short-range order and size effect (1968)
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 24 (1968), S. 557-563 
    Details
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: A new approach to the kinematical theory has been developed for the case of binary alloy solid solutions with short-range ordering of the atoms and displacements of the atoms from the average lattice sites due to departures of the effective atomic radii from the average for the alloy. Both the pseudo-temperature factor on the Bragg reflexions and the diffuse scattering intensity are shown to depend on summations over higher-order correlation parameters, defined in terms of the probabilities that groups of three, four or more sites should be occupied in specific ways. Expressions involving these parameters, and the usual short-range order parameters, αi, are derived with terms of up to the second order in the displacement parameters for the Huang scattering around the fundamental Bragg reflexions, for the short-range order diffuse peaks, and for additional diffuse scattering depending on higher-order correlation parameters only. Special cases of practical significance are explored, and some estimates are made of the relative magnitudes of the terms not included in previous treatments of this problem.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S056773946800118X
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...