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  • 1
    Electronic Resource
    Electronic Resource
    Phase transition of new solid solution crystal Li0.7Na0.3NbO3 (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1983-1985 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A ferro-antiferroelectric Li0.7Na0.3NbO3 solid solution crystal was grown from the melt by the Czochralski method. It has been found from the high temperature x-ray diffraction that the crystal is orthorhombic with a unit cell of dimensions a=5.374(9) A(ring), b=5.152(1) A(ring), and c=16.738(0) A(ring) at 25 °C, and undergoes a structural phase transition from orthorhombic to tetragonal at 480 °C. It was confirmed from the observation of the D-E hysteresis loop and the pyroelectric measurements that the mixed crystal Li0.7Na0.3NbO3 undergoes a first order ferroelectric phase transition at 480 °C. In the dielectric measurements, the dielectric behavior in the vicinity of the phase transition temperature reveals a diffusive character and also a pronounced dielectric dispersion due to an ionic hopping observed over the wide temperature range near 298 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357662
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  • 2
    Electronic Resource
    Electronic Resource
    Structural properties of ZnSe on GaAs grown by atomic layer epitaxy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 928-931 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe epilayers were grown on GaAs (100) substrates by atomic layer epitaxy modified from chemical-vapor deposition with thicknesses ranging from 600 to 6000 A(ring). X-ray-diffraction and micro-Raman scattering measurements were carried out to study the effects of strain in the ZnSe epilayers with different thicknesses. The increase in full width at half-maximum of double-crystal x-ray rocking curves was observed for layers thicker than the critical thickness, which indicates that the crystallinity gets strongly degraded when the layers are grown over the critical thickness. The critical thickness estimated by x-ray rocking curves is 1500 A(ring), while that obtained by micro-Raman scattering is 1000 A(ring). This difference suggests that the elastic strain depends on the layer depth for ZnSe epilayers around the critical thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357770
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  • 3
    Electronic Resource
    Electronic Resource
    Structure and magnetic properties of Co/Cu multilayer films (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2387-2394 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure, magnetic properties and magnetoresistance of Co/Cu multilayer films grown by sputtering on Si (100) wafers, with Co layer thicknesses between 1.9 nm and 2.0 nm and Cu layer thicknesses between 0.5 nm and 1.3 nm, have been studied. X-ray diffraction, transmission electron microscopy, and optical diffractogram analysis show layered structures and a columnar face-centred-cubic (111) crystallographic texture extending through several layers in the films. The magnetic domain structure was studied by Lorentz microscopy, and the domain structure and image contrast were found to depend strongly on the Cu layer thickness and magnetoresistance. Hysteresis curves explain the trends of magnetic domain contrast and magnetic coupling in the films. Annealed samples show a more regular domain structure, and lower saturating field and magnetoresistance than as-sputtered samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357586
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  • 4
    Electronic Resource
    Electronic Resource
    Magnetic force microscopy of Co-Pd multilayers with perpendicular anisotropy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2974-2980 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The domain structure of sputtered Co-Pd multilayer films of varying thickness has been investigated by magnetic force microscopy. The domains appear as stripe domains, typical of perpendicularly oriented films. The size of the domains was strongly influenced by the thickness of the film. The domain repetition lengths give an additional experimental parameter which has been used to provide a stronger test of a theoretical model developed for ferromagnetic multilayer films [H. J. G. Draaisma and W. J. M. de Jonge, J. Appl. Phys. 62, 3318 (1987)]. It is found that the experiment and theory are broadly in agreement provided that the increased magnetization of the multilayer caused by polarization of the Pd is accounted for. There is a noticeable difference between the variation of the measured and theoretical domain repetition lengths with film thickness. This is attributed to the effects of domain-wall pinning which is not considered in the model. It is estimated that the characteristic length of the films is 55 A(ring) and the domain-wall energy is 14 mJ/m2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357538
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  • 5
    Electronic Resource
    Electronic Resource
    Magnetic and structural studies of sputtered Co/Cu multilayer films : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6513-6515 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure and magnetic properties of sputtered Co/Cu multilayer films with various layer thicknesses have been studied. X-ray diffractometry and high resolution electron microscopy show the films to be polycrystalline with a fcc structure and strong [111] texture in the growth direction. The magnetoresistance (MR) of the films depends critically on Cu layer thickness (tCu), with maximum values for films with tCu around 1 nm. Large differences in saturating field are seen for films with tCu and tCo differing by a nominal 0.1 nm. The magnetic domain structure, studied using Lorentz microscopy, shows strong dependence on tCu. High MR-value films showed evidence of antiphase magnetic domain boundaries. The high MR samples show antiferromagnetic coupling, with higher saturating fields than seen in the ferromagnetically coupled films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358246
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  • 6
    Electronic Resource
    Electronic Resource
    Study of strain and disorder of InxGa1−xP/(GaAs, graded GaP) (0.25≤x≤0.8) using spectroscopic ellipsometry and Raman spectroscopy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5040-5051 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of InxGa1−xP/GaAs and InxGa1−xP/graded InGaP/GaP (0.25≤x≤0.8) epitaxial layers have been studied using spectroscopic ellipsometry and Raman spectroscopy. The (E1,E1+Δ1) critical points and the first-order phonon frequencies were determined as a function of In composition. The general behavior of the peak shifts and broadenings of both the E1 gaps and the optical phonons of InxGa1−xP/GaAs can be explained in terms of biaxial strain and strain relaxation caused by lattice-mismatch. The near-cancellation of E1 gap change due to the compensation effect between alloy composition and misfit strain is observed. As misfit strain increases, the E1 gap broadens whereas the phonon line shape does not change. In strain relaxed samples of InxGa1−xP/(GaAs, graded GaP) (0.3≤x≤0.8), the E1 gap linewidth shows upward bowing as a function of In composition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355746
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  • 7
    Electronic Resource
    Electronic Resource
    Crystal engineering in two dimensions: design of amphiphiles for ordered films (1992)
    s.l. : American Chemical Society
    Langmuir 8 (1992), S. 2591-2594 
    Details
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/la00047a003
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  • 8
    Electronic Resource
    Electronic Resource
    Transport properties of InAsxSb1−x (0≤x≤0.55) on InP grown by molecular-beam epitaxy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6819-6822 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular-beam epitaxy has been successfully used to grow InAsxSb1−x on InP substrates with good electrical characteristics. The samples are all n type with electron concentrations varying in the range (3–9)×1015 cm−3. The mobilities are high (70 000 and 110 000 cm2/V s at 300 and 77 K, respectively) in InSb and the alloys. More importantly, the mobilities remain high at the low temperatures in the alloys also, without any type conversion. The mobility data have been analyzed taking into account the appropriate scattering mechanisms. The alloy scattering potential in InAs0.24 Sb0.76 is estimated to be 0.3 V.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345071
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  • 9
    Electronic Resource
    Electronic Resource
    Defect band behavior in p-Cd0.96Zn0.04Te by hydrogen passivation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4077-4079 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence measurements were carried out in order to investigate the dependence of the optical properties of p-Cd0.96Zn0.04Te single crystals on hydrogen passivation conditions. After the p-Cd0.96Zn0.04Te was annealed at 500 °C in a Cd atmosphere for 5 h, the luminescence due to the recombination of the electrons in the conduction band with acceptors (eA°) and to the donor–acceptor pair (DAP) transitions disappeared. After the p-Cd0.96Zn0.04Te was hydrogenated, the intensity of the exciton luminescence increased so that the (eA°) and DAP peaks related to the Cd vacancies disappeared, and the defect band in the low energy range between 1.4 and 1.5 eV also vanished. These results indicate that hydrogen atoms passivated not only shallow donors but also deep acceptor impurities and that the hydrogen atoms were separated from the hydrogenated samples at 400 °C due to their thermal energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352833
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  • 10
    Electronic Resource
    Electronic Resource
    Dependence of the optical properties of p-CdTe and p-Cd0.96Zn0.04Te on the bromine concentration in a bromine-methanol etching solution (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4074-4076 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence measurements were carried out to investigate the dependence of the optical properties of p-CdTe and p-Cd0.96Zn0.04Te on various relative concentrations of bromine in a mixture of methanol and bromine. As the bromine concentration increased, the intensity of the luminescence increased; additionally, an exciton bound to a neutral acceptor (A°X) peak at 1.588 eV in p-CdTe was resolved into an exciton bound to neutral donor (D°X) peak at 1.592 eV and an A°X peak. The mixed bands of the 1.574 and 1.546 eV peaks were well resolved by using an etching bromine concentration of 2%; in particular, the intensities of the D°X and 1.574 eV peaks increased as much as five and seven times, respectively. The intensity of the peak at 1.48 eV related to defects also increased. The intensity of A°X at 1.609 eV in p-Cd0.96Zn0.04Te changed slightly with the bromine concentration. The intensities of the luminescence peaks due to the recombination of the electrons in conduction band with acceptors and to the defect relation did not vary. These results indicated that the number of Cd vacancies could be reduced due to the addition of Zn.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352832
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