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  • 1
    Electronic Resource
    Electronic Resource
    Acid-catalyzed oxidation of 2,4-dichlorophenoxyacetic acid by ammonium nitrate in aqueous solution (1990)
    s.l. : American Chemical Society
    Environmental science & technology 24 (1990), S. 566-571 
    Details
    ISSN: 1520-5851
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/es00074a017
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Asymmetric Diels-Alder Reactions with .alpha.,.beta.-Unsaturated Acetals (1994)
    s.l. : American Chemical Society
    The @journal of organic chemistry 59 (1994), S. 6890-6891 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo00102a006
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Band edge optical absorption in intrinsic silicon: Assessment of the indirect transition and disorder models (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3988-3996 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two competing theories of the optical absorption edge of intrinsic crystalline silicon, the indirect transition theory, and the recent disorder (Urbach edge) theory, are assessed critically. The assessment of the indirect transition theory includes an attempt to predict, by the use of the luminescence spectrum and the principle of detailed balance, the optical absorption in the wavelength range where it is mediated by the simultaneous absorption of up to three phonons. The inability of this method to accurately reproduce the experimental data is used to illustrate limitations of the indirect transition theory: its neglect of band degeneracy and its failure to explain the different absorption replica shapes for different phonons. In its published form, the disorder theory does not explicitly address the question of the role of indirect processes or the nature of the strong transitions which trigger the disorder processes. Some of the evidence presented in favor of the theory is shown to be in doubt. The possible synthesis of the two theories is proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352864
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  • 4
    Electronic Resource
    Electronic Resource
    Diffusion effects in p-type PtSi Schottky diodes under reverse bias (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3601-3604 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: At low temperature, the dominant current transport process of a p-type PtSi Schottky diode on a moderately doped Si substrate is thermionic emission over the barrier. In this paper, current has been measured as a function of temperature at a fixed reverse bias for several Schottky diodes. It is found that diffusion effects due to the limitation upon the diffusion rate through the space-charge region can become significant under some conditions. At moderate field, these conditions are calculated to be at a temperature of 150 K or greater, depending on the doping density of the devices. I-V-T measurements were carried out on several Schottky devices fabricated in slightly different ways, and the diffusion effect was observable in some of these devices. A numerical routine is utilized to fit the experimental data to a combined thermionic emission-diffusion theory in these regions. It is found that the experimental results fit this theory well. In addition, the acceptor density at which diffusion becomes the dominant current at 80 K under moderate field is calculated to be around 5×1011 cm−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348505
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  • 5
    Electronic Resource
    Electronic Resource
    Correlation between current-voltage and capacitance-voltage Schottky barrier height on (100) and (110) GaAs and (110) InP surfaces (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3470-3474 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recently, systematic studies of the electrical properties of both n- and p-type Schottky diodes formed by a large number of metals on GaAs of both (100) and (110) orientation and on (100)-oriented InP have been reported. Current-voltage (I-V) and capacitance-voltage (C-V) measurements were carried out and the barrier heights were evaluated in these studies. In this paper, these I-V zero-bias barrier heights have been correlated with the ideality factors of these diodes. Resulting from this modified barrier height approach is a more fundamental flat-band (zero-field) barrier which compares remarkably well with the reported values from the C-V measurements. In addition, the sum of the modified n- and p-type flat-band barrier heights for the GaAs (100) and InP (110) Schottky diodes is in better agreement with the band gap for each of the different metals used than the initially reported results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347169
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  • 6
    Electronic Resource
    Electronic Resource
    Avalanche injection model for the lock-on effect in III-V power photoconductive switches (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1807-1812 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lock-on effect—observed in high-power GaAs and InP photoconductive switches—is characterized by a high on-state conduction current resulting from a high gain switching mechanism. In our study, an analytical model has been developed to determine the fundamental limitations to device performance imposed by this effect on high-power switching devices. In this model, a regional approximation is used to calculate the field distribution in the device and to obtain the device's current density-voltage (J-V) characteristics. It is shown that negative resistance gives rise to high-field avalanche injection at the anode boundary. Moreover, the analytical results indicate the importance of electron velocity saturation for the onset of negative resistance, as well as the effect of hole injection from the high-field anode region on voltage lowering across the switch. It is determined that lock-on is associated with the transferred-electron effect, and will therefore constrain the use of GaAs and InP as materials for high-power switching devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353190
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Erratum: "Band edge optical absorption in intrinsic silicon: Assessment of the indirect transition and disorder models'' [J. Appl. Phys. 73, 3988 (1993)] (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6462-6462 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355344
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  • 8
    Electronic Resource
    Electronic Resource
    Characteristics of p-type PtSi Schottky diodes under reverse bias (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4127-4132 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The characteristics of p-type PtSi Schottky diodes are determined under reverse bias at cryogenic temperatures. Zero-bias and flat-band barrier heights of 0.242 and 0.263 eV, respectively, are evaluated from the data. In addition, the observed lack of excess barrier lowering (other than the image force lowering) is discussed. This excess barrier lowering has previously been postulated to arise from the penetration of the tail end of the metal wave function into the midgap of the semiconductor. Reverse activation analysis is reported for 30 Schottky diodes and an average experimental effective Richardson constant of 45 A/cm2 K2 is determined. The difference from the theoretical value (32 A/cm2 K2) is attributed to the temperature coefficient of the barrier height. A value of 2.7×10−5 eV/K for this coefficient is obtained, which is at least one order of magnitude smaller than the variation of the bandgap of silicon. This provides further evidence that the barrier of the p-type PtSi Schottky diode is pinned at the valence-band edge, in agreement with previous results and the expectation inferred from the n-type measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346254
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    Electronic shell closings in metal cluster plus adsorbate systems: Cu+7CO and Cu+17CO (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 6181-6184 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The stability of CO-chemisorbed small clusters of copper have been studied both by first principles calculations and by experiment. Evidence is found that the shell model (which predicts that clusters of 8, 18, and 20 electrons are particularly stable) is useful both for the bare metal clusters, and for these clusters with a chemisorbed CO−provided the CO is considered to have contributed two electrons. Experiments supporting this view are reported for gold clusters as well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.461588
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  • 10
    Electronic Resource
    Electronic Resource
    A˜ 1B2–X˜ 1A1 26v0 transitions of 18O-enriched tropolone (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 6456-6462 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Laser excitation spectra with v=0, 2, 4, and 6 in the A˜ 1B2–X˜ 1A1 26v0 progression of jet-cooled 18O/16O isotopomers of tropolone are reported. The isotope shift for ν26, an out-of-plane deformation mode at 39 cm−1 in the A˜ state, is 2% for tropolone-18O18O. This large 18O isotope effect indicates that Q26 for tropolone resembles the analogous normal mode of tropone, which is a ring deformation towards the boat conformation of 2, 4, 6-cycloheptatriene accompanied by a large O atom displacement. Tunneling by tropolone in the A˜ state is quenched by exciting the 26v overtone states and a mechanism for this quenching is proposed in terms of the indicated normal coordinate. Tunneling splittings are 〈0.3 cm−1 for the zero point levels of the X˜ state of the symmetrical isotopomers. In contrast, vibrational isotope effects dominate the tunneling interactions to split the corresponding levels of tropolone-16O18O by 1.7 cm−1. In the A˜ state of this isotopomer the tunneling interactions are dominant. Because they are determined by the overlap between localized and delocalized wave functions, the Franck–Condon factors of tropolone-16O18O are smaller than those of the symmetrical isotopomers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.458325
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