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  • 1
    Electronic Resource
    Electronic Resource
    Raman scattering and stress measurements in Si1−xGex layers epitaxially grown on Si(100) by ion-beam sputter deposition (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4268-4277 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si1−xGex thin films have been grown on silicon substrates by ion-beam sputter deposition (IBSD). Film stress has been determined from the change in deflection curvature of the substrate after deposition and strain has been investigated by using Raman scattering spectroscopy. These properties have been studied as a function of different parameters: growth temperature, layer thickness, and annealing conditions. Raman and stress results are in close correspondence with regard to effects of deposition temperature. Si-rich films (0≤x≤0.3) were compressively strained for all deposition temperatures. A compressive to tensile stress change was observed in the Ge-rich alloys (x=0.6) when the growth temperature reached Tg ≈ 500 °C. In addition, the strain as a function of depth from the surface has been studied by changing the laser wavelength. The strain has been shown to increase from the surface to the interior of the film. The origin of the stress observed in IBSD films is discussed and we show that this stress is due to the effect of the bombardment of the growing film by energetic sputtered atoms and can be understood by using the atomic peening model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349104
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  • 2
    Electronic Resource
    Electronic Resource
    Deposition of mass selected silver clusters in rare gas matrices (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 8535-8543 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We report on the successful "soft landing'' of size selected silver dimers and trimers in solid krypton matrices. Silver cluster cations, produced by sputtering, were mass selected in a quadrupole mass filter and then codeposited with krypton on a cooled sapphire or CaF2 window in the presence of low energy electrons. Neutralized cluster samples were interrogated in situ by excitation and fluorescence spectroscopy. Deposition of slow (≤20 eV) silver dimer cations gave rise to strong excitation bands (centered at λ=275 and 390 nm) from Ag2 plus the characteristic triplet signal of the atom. The spectra imply that fewer than 25% of the dimers were fragmented during the neutralization and deposition steps. In similar experiments with Ag3 we were able to assign trimer absorption bands at 331, 364, 402, 421, 458, and 514 nm and identify characteristic emission features at 381, 560, and 626 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.459291
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  • 3
    Electronic Resource
    Electronic Resource
    Thiophene-Containing Antihistaminic Agents (1947)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 69 (1947), S. 2239-2240 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja01201a512
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  • 4
    Electronic Resource
    Electronic Resource
    Reactive-ion-beam-sputtered WNx films on silicon: Growth mode and electrical properties (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3900-3907 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: WN films were deposited on clean Si(100) substrates via reactive-ion-beam sputtering a W target by a nitrogen ion beam in an UHV system. The energy of the incident ions varied in the range of 0.250 to 3 keV. The growth mode dependence of the films on the nitrogen ion energy was studied by in situ Auger electron spectroscopy measured as a function of coverage. Nitridation of the Si at the first stage of deposition has been found. This nitridation was more pronounced for the lower N beam energies, and minimal for the 2 keV beam. A similar trend was observed for the bulk film composition. In a complementary way, the dependence of electrical properties of the WN/Si junctions on the nitrogen energy has been studied. A higher barrier height on p-type Si than on n-type Si was found, unlike the expectation for regular metallization of W and its compounds on Si. The electrical characteristics can be attributed to the deposition technique. For the low-energy beams, the formation of the interfacial layer was probably dominating, while at higher energies radiation damage and possibly also N implantation played a more important role.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356035
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  • 5
    Electronic Resource
    Electronic Resource
    Schottky diodes with high series resistance: Limitations of forward I-V methods (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7973-7984 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Some methods have been proposed to deduce the value of Schottky parameters from forward I-V characteristic even in the presence of a large series resistance. In this paper, some well-known methods have been applied to experimental data of a real diode and to computer calculated curves. A comparison is made between these methods and the standard procedure. Some indications are given on the validity and the main limitations of all these techniques. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357909
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  • 6
    Electronic Resource
    Electronic Resource
    Ion source studies at the ORNL ECR source facility : International conference on ion sources (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 324-326 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Using high resolution magnetic analysis, we have measured energy spreads of Ar+q (1〈q〈12) ion beams extracted from the ORNL ECR ion source under a number of different ECR plasma conditions. The measured energy spreads for the different charge states fall in the range 8–20 eV per charge and are all roughly proportional to the ion charge. In addition, we have used a combination of magnetic and electrostatic analysis to investigate the high charge state tail of the extracted Ar+q charge state distribution. Charge states up to +16 have been positively identified; in addition, tentative identification of extracted Ar+17 ions has been made, with total intensity in the range of 10–20 kHz.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141283
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  • 7
    Electronic Resource
    Electronic Resource
    Schottky barrier heights of W on Si1−xGex alloys (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2520-2522 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Schottky barrier height of W on p-type Si1−xGex/Si has been investigated as a function of composition (10%≤x≤33%) and Si1−xGex thickness for a given composition. The barrier height decreases with increasing Ge fraction and follows the rate of strain relaxation. These results suggest that the Fermi level at the interface is pinned relative to the conduction band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110468
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  • 8
    Electronic Resource
    Electronic Resource
    Zum Problem des Stoffwechsels der Brenztraubensäurein vivo (1948)
    Springer
    Cellular and molecular life sciences 4 (1948), S. 31-31 
    Details
    ISSN: 1420-9071
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary Following intravenous injection of pyruvic acid (PA) in the form of the sodium salt in the normal rabbit the level of PA in the blood rises, falling again to the initial level after 60 minutes. In the case of the alloxandiabetic animal the elimination of PA administered in equal doses is markedly retarded. If animals are used that suffer from a progredient alloxan diabetes leading to death in coma, an increased endogenous hyperpyruviæmia can be demonstrated. Insulin plays no part in the regulation of PA metabolism; through the application of aneurin, however, one succeeds in enabling the organism to make use of PA. A separate report will deal with the complex relations holding in endogenous hyperpyruviæmia in coma.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02164291
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  • 9
    Electronic Resource
    Electronic Resource
    Zum Problem des Stoffwechsels der Brenztraubensäurein vivo (1948)
    Springer
    Cellular and molecular life sciences 4 (1948), S. 195-196 
    Details
    ISSN: 1420-9071
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary In the end-stage of progressive alloxan diabetes of the rabbit we have been able to overcome the acute pyruvic acidosis by the use of phosphorylated vitamin B1 (cocarboxylase) together with vitamin B2, while it is impossible to cure the endogen hyperpyruviæmia with simple vitamin B1. The superiority of the coferment over the vitamin, which is only effective at the beginning of the decompensation, implies the existence of a disturbance in the phosphorylation during the crisis of diabetic metabolism. We have been successful in preventing the inevitable death in coma of diabetic rabbits by doses of cocarboxylase + riboflavin, and we were able to keep them alive by continuous doses of insulin together with vitamin B1 and B2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02153878
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  • 10
    Electronic Resource
    Electronic Resource
    Die Wirkung der Digitalis beim Herzkranken (1949)
    Springer
    Naunyn-Schmiedeberg's archives of pharmacology 208 (1949), S. 74-87 
    Details
    ISSN: 1432-1912
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00244667
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