Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Ion Beam Sputter Deposited Si〈sub〉0.8〈/sub〉Ge〈sub〉0.2〈/sub〉Epilayers: Lattice Defects and Surface Topology (1995)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 47-48 (July 1995), p. 431-436 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/25/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.47-48.431.pdf
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Growth and Defect Formation in Thin Ge and Si〈sub〉0.8〈/sub〉Ge〈sub〉0.2〈/sub〉 Layers Ion Beam Sputter Deposited on Si(001) (1996)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 51-52 (May 1996), p. 193-198 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/25/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.51-52.193.pdf
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Effect of growth conditions on the structural properties of ion beam sputter deposited SiGe epilayers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4975-4981 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural properties of Si1−xGex layers epitaxially grown on Si(100) by Ion Beam Sputter Deposition were studied as a function of growth temperature and film thickness. It was shown that the structure of defects strongly depends on the growth temperature, Tg. The dislocations cross grid which is observed at the SiGe/Si interface for layers grown at high (700 °C) Tg is missing in layers grown at low ((approximately-less-than)550 °C) Tg, while a new type of defects parallel to {001} and {113} lattice planes appear at these temperatures. The optimal Tg for a Ge content of 20-25 at. % was found to be close to 550-625 °C. Surface roughness for all the growth temperatures was found to be less than that for such a "smooth'' technique as MBE. Photoluminescence studies revealed, to the best of our knowledge for the first time, two peaks on the low energy side in the neighborhood of the Si(TO) peak of the epilayers. The evolution of the intensity of these peaks is strongly correlated with the dynamics of strain relaxation and can be attributed to a set of dislocations at the SiGe/Si interface extending both to the epilayer and to the bulk Si. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359788
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Raman scattering and stress measurements in Si1−xGex layers epitaxially grown on Si(100) by ion-beam sputter deposition (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4268-4277 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si1−xGex thin films have been grown on silicon substrates by ion-beam sputter deposition (IBSD). Film stress has been determined from the change in deflection curvature of the substrate after deposition and strain has been investigated by using Raman scattering spectroscopy. These properties have been studied as a function of different parameters: growth temperature, layer thickness, and annealing conditions. Raman and stress results are in close correspondence with regard to effects of deposition temperature. Si-rich films (0≤x≤0.3) were compressively strained for all deposition temperatures. A compressive to tensile stress change was observed in the Ge-rich alloys (x=0.6) when the growth temperature reached Tg ≈ 500 °C. In addition, the strain as a function of depth from the surface has been studied by changing the laser wavelength. The strain has been shown to increase from the surface to the interior of the film. The origin of the stress observed in IBSD films is discussed and we show that this stress is due to the effect of the bombardment of the growing film by energetic sputtered atoms and can be understood by using the atomic peening model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349104
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    A microwave plasma cathode electron gun for ion beam neutralization : Proceedings of the 7th international conference on ion sources (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 1153-1155 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: It is well known that there exist two distinct types of ion beam neutralization, viz., charge and current neutralization. We have designed and studied a versatile and compact microwave plasma (MP) cathode electron gun dedicated to charge as well as current neutralization. Unlike the conventional hot cathode neutralizer, this MP cathode allows operation of the electron gun in a reactive gaseous environment when it is eventually associated with an electron cyclotron resonance (ECR) ion gun. Charge neutralization can be easily carried out by extracting from the MP cathode through a 1 mm diameter hole, a 35 mA electron beam under a 20 V voltage; the MP cathode being fed with a 75 W microwave power at 2.45 GHz. Higher beam intensities could be obtained using a multiaperture thin plate. Electron beam intensities as high as 300 mA and energies of 2 keV needed for current neutralization, e.g., when an ion beam impinges onto a thick dielectric surface, are obtained via a two-stage arrangement including an anodic chamber associated with a set of three monoaperture plates for the electron beam extraction. Transport of 200–2000 eV electron beams is ensured using focusing optics composed of three aligned tubes 6 cm in diameter and unsymmetrically polarized. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148654
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Radio frequency, microwave, and electron cyclotron resonance ion sources for industrial applications: A review (invited) : Proceedings of the 6th international conference on ion sources (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 895-900 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We recall the different classes of electromagnetic field excited ion sources and their characteristic features in the scope of industrial applications. Emphasis is laid on various criteria and conditions: long source lifetimes, intense inert or reactive ion beams free from contaminants, low process pressures, severe environmental conditions, reliability, possibility of automatic control, simplicity in handling, and maintenance. Examples of sources particularly suited to processes involving deposition or surface modification of materials are reviewed. Specific technological solutions and designs applied to these sources for industrial applications are examined. A few examples of applications using ion-beam processes in different fields (optics, microelectronics, and mechanics) are presented and further trends, especially for inline surface treatments, are examined. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146832
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    A compact electron cyclotron resonance proton ion source : Proceedings of the 6th international conference on ion sources (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 994-996 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The demand has increased for a high-current, long lifetime ion source in various fields of application. The present work concerning the production of atomic hydrogen ions H+ in competition with molecular ions H+2 has been essentially motivated by recent trends in the field of passivation of silicon [V. Le Thanh, M. Eddrief, and C. A. Sébenne, Appl. Phys. Lett. 64, 3308 (1994)]. For a given low neutral energy, passivation with a neutral atomic beam H instead of H2 is preferred. The most straightforward method to produce the neutral beams is by the extraction of low energy atomic ions, and neutralization by electron capture. We have thus developed an electron cyclotron resonance coaxial hydrogen ion source that produces a 30-mm-diam ion beam, is operated with a microwave power in the range of 50–130 W, and has a pressure of neutrals in the range of 6×10−4–4×10−3 mbar. We have compared the proportion of extracted H+ and H+2 ions with the two principal parameters of the plasma: the pressure of neutrals and microwave injected power. These parameters have been optimized for the production of an 83% atomic ion beam. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146795
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Electron cyclotron resonance applicator of the Wilkinson microwave power divider type for large diameter ion sources : Proceedings of the 7th international conference on ion sources (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 843-845 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have designed and tested a new model of coaxial 2.45 GHz electron cyclotron resonance (ECR) ion source based on the splitting of the microwave power traveling along a coaxial line into a set of periodically distributed antennas. Our motivation was the study of the scaling-up feasibility of a coaxially fed ion source in which it is desirable to circumvent the transverse electric and magnetic (TEM) mode conversion into azimuthally unsymmetrical higher-order modes. Another important characteristic of this source is the possible incorporation of permanent magnets into the individual antennas in order to create the ECR zones around the latter. The validity of these concepts was tested on a 5 cm in external diameter coaxial ECR ion source in which the single thick coaxial antenna was replaced by a set of quarter wavelength magnetized rod antennas in order to enhance the magnetic field created by the external splitted ring magnets. For an incident power of 100 W and an argon pressure of 1.2×10−4 mbar, a 500 eV singly charged ion beam with a current density of 1 mA/cm2 was delivered through an accel-decel set of grids. Implementation of a scaled-up 20 cm in diameter ion source is in progress. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148578
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    A slab-shaped electron cyclotron resonance ion beam source for in-line running target treatments : Proceedings of the 6th international conference on ion sources (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 1000-1002 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The possibility of industrial surface treatments of broad metallic rolls by appropriate ion beams has motivated our study of an immersed electron cyclotron resonance slab-shaped ion source composed of a number of elementary microwave modules fed in parallel through a linear power divider. We describe the performances of a single module implemented by a 45-mm-height ionization chamber of 80×15 mm cross section surrounded by a set of permanent magnets in a multipole configuration. A current density of 5 mA/cm2, uniform to within 10% over a 60 mm width, has been obtained for argon as well as for oxygen and nitrogen under a 500 W input power and a gas pressure of 5–8×10−3 mbar in the ionization chamber. Moreover, we have investigated the case of the non-normal incidence of the ion beam onto the running target. For 30° and 60° incidence angles with respect to the normal, the current density loss is 15% and 25%, respectively. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146796
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Modified distributed electron cyclotron resonance ion source for the production of large diameter ion beams (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 3816-3825 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The work presented in this article concerns the conception and the study of a multiantenna electron cyclotron resonance (ECR) ion source at 2.45 GHz dedicated to the surface treatment of large area materials. In this original device, a microwave plasma is created in a 20 cm in diameter ionization chamber. The 15 cm in diameter extracted ion beam has a current density of about 1 mA/cm2. The applicator is an N-way coaxial power divider in which the N=20 antennas are individually magnetized by internal SmCo bars in order to produce ECR zones in their vicinity. Moreover, the microwave plasma is confined by a multicusp magnetic structure surrounding the ionization chamber. The choice of the source geometry has been guided by the study of some theoretical considerations such as the characteristic diffusion length, the minimum breakdown field, and the penetration depth of the wave into the plasma. Simulations both of the electromagnetic field and the static magnetic field distribution have been carried out in order to validate the final choice of the source geometry. A full characterization of the ECR plasma and of the extracted ion beam was made with different experimental techniques. These results allow us to localize the plasma creation zones inside the ionization chamber. A 120 mA singly charged argon ion beam with a profile homogeneity better than ±5% over 10 cm was obtained 5 cm downstream the extraction system with a 300 W microwave power and a neutral argon pressure of 10−3 mbar in the ionizing chamber. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1396660
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...