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  • 1
    Electronic Resource
    Electronic Resource
    An Improved Commutator and some Sources of Error in the Commutator Method for the Measurement of Overvoltage (1932)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 36 (1932), S. 1156-1165 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j150334a008
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  • 2
    Electronic Resource
    Electronic Resource
    The Measurement of Polarization by the Direct and Commutator Methods (1932)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 36 (1932), S. 1166-1177 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j150334a009
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  • 3
    Electronic Resource
    Electronic Resource
    Studies on Overvoltage. V (1932)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 36 (1932), S. 2437-2445 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j150339a006
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  • 4
    Electronic Resource
    Electronic Resource
    Studies on Overvoltage. VII. Electrode Discharge Phenomena Studied by Means of an Electromagnetic Interrupter together with an Oscillograph. (1934)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 38 (1934), S. 1117-1125 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j150359a013
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  • 5
    Electronic Resource
    Electronic Resource
    Analysis of terbium thermodynamic characteristics for magnetic heat pump applications (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3908-3911 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Based on molecular field theory, including the effect of the field-dependent nature of Néel temperature, the entropy, and the magnetocaloric effect in terbium (Tb) have been calculated with the external field between 0 and 7 T (Tesla). The calculated results are compared with the existing experimental measurements. The maximum magnetocaloric temperature change (ΔT) is approximately 14 K near the zero-field Néel temperature (230 K) for an external field at 7 T field. This relatively large magnetocaloric effect indicates that Tb could be an attractive candidate for magnetic heat pump application. The results are then used to study the performance of heat pumps for the Carnot cycle, the constant field cycle, and the ideal regenerative cycle. The performances of these three cycles are discussed and compared.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352267
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  • 6
    Electronic Resource
    Electronic Resource
    Atomspheric pressure organometallic vapor-phase epitaxial growth and characterization of Ga0.4In0.6P/(Al0.4Ga0.6)0.5In0.5P strained quantum wells (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3356-3363 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single and multiple Ga0.4In0.6P/(Al0.4Ga0.6)0.5In0.5P quantum wells have been grown using atmospheric pressure organometallic vapor phase epitaxy. The Ga0.4In0.6P well layers are coherently strained to match the lattice parameter of the GaAs substrate. Transmission electron microscopic results showed that the quantum-well layers are very uniform in thickness and the interface is abrupt and free of misfit dislocations. The photoluminescence peak energy increases as the well width decreases, due to carrier confinement in the quantum well. Growth interruptions do not change the photoluminescence peak energy of the quantum well. However, the photoluminescence intensity is drastically reduced for longer growth interruption times. Higher-order x-ray diffraction satellite peaks and a narrow photoluminescence halfwidth are observed in a 20-layer multiple-quantum-well sample, indicative of high structural uniformity and precise control of the composition and thickness during the growth process. Considering the effect of strain on the heterojunction band offsets, the photoluminescence peak energy of the strained quantum well can be described by a simple theory as a function of the well width.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346364
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  • 7
    Electronic Resource
    Electronic Resource
    Zinc selenide films and heterojunctions (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3865-3869 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline films of zinc selenide (ZnSe) have been deposited on glass and ZnO:F/glass substrates at 400–500 °C by the reaction of diethylzinc (DEZn) and diethylselenium (DESe) in a hydrogen atmosphere. The DESe/DEZn molar ratio in the reaction mixture is an important factor affecting the deposition rate and dopant incorporation in deposited films. The deposited films have high lateral electrical resistivity and poor photoconductivity. The resistivity can be reduced and photoconductivity significantly improved by the incorporation of a group VI (Cl or Br) or a group III (Al) dopant, and the use of trimethylaluminum (TMAl) as a dopant is considerably more effective than the use of Cl or Br compounds. The structural, optical, and electrical properties of ZnSe films have been characterized. The use of ZnSe films as a heterojunction partner in II-VI thin-film solar cells has been explored. Zinc telluride and cadmium telluride films were deposited on ZnSe/ZnO:F/glass substrates, and the characteristics of ZnSe/ZnTe and ZnSe/CdTe junctions studied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350851
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  • 8
    Electronic Resource
    Electronic Resource
    Magnetic properties of Dy2Fe17 and Dy2Fe17C : The 5th Joint MMM−Intermag Conference (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6152-6153 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic properties of Dy2Fe17 and Dy2Fe17C have been reported. The expansion of the lattice and increase of Curie temperature Tc and magnetization M have been found for Dy2Fe17C, and compared with Dy2Fe17. From the study of 57Fe Mossbauer spectra, we found that the average hyperfine field of Dy2Fe17C is about 5 T larger than that of Dy2Fe17. The isomer shift of the 4f site is smaller for Dy2Fe17C compared with Dy2Fe17.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350026
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  • 9
    Electronic Resource
    Electronic Resource
    Internal reflection effects on transient photothermal reflectance (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3461-3466 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transient photothermal reflectance may provide valuable mechanistic and diagnostic information during laser-material interaction. Fast laser heating, however, often generates a large temperature gradient and stratifies the heated region through the temperature-dependent optical properties. An electromagnetic wave propagating through such a stratified medium experiences internal reflection so that the reflectance from a surface depends on the profile of the optical properties beneath it. The internal reflection process also redistributes the energy absorption and thus the temperature field. To evaluate the effects of internal reflection on the reflectance and temperature distribution, the one-dimensional energy equation is solved numerically, coupled with the matrix method in optical multilayer theory, for nickel (Ni), silicon (Si), and germanium (Ge). The computational results agree well with the picosecond photothermal reflectance experimental results on Ni. For Si, internal reflection does not have appreciable effects on the reflectance up to the melting point, while for Ge it significantly changes the signal and the temperature distribution. Criteria are established to determine when internal reflection should be considered.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352949
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  • 10
    Electronic Resource
    Electronic Resource
    Atomic ordering in GaAsP (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4263-4272 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CuPt type ordering, which consists of a monolayer compositional modulation along one of the 4 〈111〉 directions in the lattice, was studied using transmission electron microscopy for GaAs1−xPx with values of x extending from 0.25 to 0.85. The samples were grown by organometallic vapor phase epitaxy on nominal (001) GaAs substrates that were misoriented by varying amounts in three directions. No CuPt type ordering was observed for GaAs1−xPx with x ≤0.35, while ordering was found to occur for 0.4≤x≤0.85. The direction of substrate misorientation has a major effect on the determination of which of the four possible CuPt variants are formed for 0.4≤x≤0.85. Two variants, with ordering on the (1¯11) and (11¯1) planes, appear for epilayers grown on substrates oriented exactly on the (001) plane and for substrates misoriented by 6° towards the [110] direction. Only one variant, with ordering on the (1¯11) plane, appears for epilayers grown on substrates misoriented by 6° towards [1¯10]. These ordering-induced spots observed in transmission electron diffraction (TED) patterns for GaAsP occur only for the [110] cross section. From TED studies of GaInP grown on similar substrates, we conclude that the CuPt variants in GaAsP are exactly the same as for GaInP. Further evidence supporting this conclusion was obtained by growing first a layer of GaInP followed by a layer of GaAsP. High-resolution dark field electron micrographs show domains of the same variants in both layers. A mechanism describing the formation of the specific ordered variant for both GaAsP and GaInP is proposed. From studies of ordering in a strain-layer superlattice, the strain due to lattice mismatch was found to play no significant role in the propagation of ordered domains. Microtwins, also generated due to lattice mismatch, can act as domain boundaries and prevent the propagation of the ordered domains.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348398
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